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Synthesis evidence

Engineering High-k Oxide/CuSCN Interface for p-Channel Thin-Film Transistors

Waiprasoet S., Ittisanronnachai S., Worakajit P. et al. · ACS Applied Electronic Materials · 2024 · 3510-3521

8 structured synthesis routes

Completeness describes how fully the route could be reconstructed from the main article and supporting information.

Complete recipeSource: Main

Route 1: Other

p.8 · 4.1 Metal Oxide Precursor Solution Preparation; 4.2 Metal Oxide Film Deposition · Sections 4.1-4.2

Metal precursorsaluminum nitrate nonahydrate [Al(NO3)3.9H2O, 98%, Alfa Aesar]
Solvents2-methoxyethanol (anhydrous, 99.8%)
Atmosphereambient air for oxide anneal; N2 drying during substrate cleaning
Temperature200, 300, or 400
Time1
Substrate orientationborosilicate glass or Al gate electrode; UV-ozone pretreated
Oxidant / reductantthermal conversion of precursor to oxide
Work-upprecursor stirred 24 h at room temperature, filtered through 0.2 um PTFE filter; spin-cast at 3500 rpm for 30 s; deposition repeated twice
Activationannealed 1 h to convert precursor to oxide and remove solvent
Scalability contextSolution spin-casting process on borosilicate glass/Al gate; bottom-gate architecture described as industrially relevant.
Show 2 structured reagent records
RoleReagentAmount / concentrationSource
Metal Sourcealuminum nitrate nonahydrate [Al(NO3)3.9H2O, 98%, Alfa Aesar]0.2 M precursor solutionp.8 · 4.1 Metal Oxide Precursor Solution Preparation; 4.2 Metal Oxide Film Deposition · Sections 4.1-4.2
Solvent2-methoxyethanolanhydrous, 99.8%p.8 · 4.1 Metal Oxide Precursor Solution Preparation; 4.2 Metal Oxide Film Deposition · Sections 4.1-4.2
Complete recipeSource: Main

Route 2: Other

p.8 · 4.3 Organic Modification Layer Deposition · Section 4.3

Metal precursorsAlOx-200 dielectric film
Linker precursorsmethacrylic acid (MAA)
Solventsisopropyl alcohol
AdditivesMAA:IPA volume ratio 1:5
Atmosphereambient
Temperature100
Time0.083
Substrate orientationAlOx-200 dielectric film
Work-upspin-cast at 3500 rpm at room temperature for 30 s
Activationannealed 100 deg C for 5 min to remove residual solvent
Scalability contextSolution spin-casting process on borosilicate glass/Al gate; bottom-gate architecture described as industrially relevant.
Show 2 structured reagent records
RoleReagentAmount / concentrationSource
Additivemethacrylic acid (MAA, >99.8%, TCI)organic compound:solvent volume ratio 1:5p.8 · 4.3 Organic Modification Layer Deposition · Section 4.3
Solventisopropyl alcohol (IPA, >99.5%, Sigma-Aldrich)Not specifiedp.8 · 4.3 Organic Modification Layer Deposition · Section 4.3
Complete recipeSource: Main

Route 3: Other

p.8 · 4.3 Organic Modification Layer Deposition · Section 4.3

Metal precursorsAlOx-200 dielectric film
Linker precursorstetraethyl orthosilicate (TEOS)
Solventsisopropyl alcohol
AdditivesTEOS:IPA volume ratio 1:5
Atmosphereambient
Temperature100
Time0.083
Substrate orientationAlOx-200 dielectric film
Work-upspin-cast at 3500 rpm at room temperature for 30 s
Activationannealed 100 deg C for 5 min to remove residual solvent
Scalability contextSolution spin-casting process on borosilicate glass/Al gate; bottom-gate architecture described as industrially relevant.
Show 2 structured reagent records
RoleReagentAmount / concentrationSource
Additivetetraethyl orthosilicate (TEOS, 98%, Sigma-Aldrich)organic compound:solvent volume ratio 1:5p.8 · 4.3 Organic Modification Layer Deposition · Section 4.3
Solventisopropyl alcohol (IPA, >99.5%, Sigma-Aldrich)Not specifiedp.8 · 4.3 Organic Modification Layer Deposition · Section 4.3
Complete recipeSource: Main

Route 4: Other

p.9 · 4.10 Device Fabrication · Section 4.10

Metal precursorsAl gate; oxide dielectric; Au contacts
Linker precursorsCuSCN channel; optional MAA or TEOS passivation
Solventsas oxide/CuSCN film routes
AdditivesTHF optional
AtmosphereN2 atmosphere for CuSCN and electrical measurement
Temperature100 for CuSCN anneal; 200-400 for oxide anneal
Timevarious
Substrate orientationborosilicate glass substrate; bottom-gate top-contact architecture
Work-up40 nm Al bottom gate thermally evaporated; oxide dielectric and CuSCN spin-cast; 25 nm Au source/drain thermally evaporated
ActivationCuSCN annealed 100 deg C for 30 min
Scalability contextSolution spin-casting process on borosilicate glass/Al gate; bottom-gate architecture described as industrially relevant.
Show 3 structured reagent records
RoleReagentAmount / concentrationSource
OtherAl bottom-gate electrode40 nmp.9 · 4.10 Device Fabrication · Section 4.10
OtherAu source/drain electrodes25 nmp.9 · 4.10 Device Fabrication · Section 4.10
OtherCuSCN semiconductor layer20 mg mL-1 precursor solutionp.9 · 4.10 Device Fabrication · Section 4.10
Complete recipeSource: Main

Route 5: Other

p.8-9 · 4.4 CuSCN Solution and Film Preparation · Section 4.4

Metal precursorscommercial CuSCN powder
Linker precursorsthiocyanate already present in CuSCN
Solventsdiethyl sulfide (DES, 98%)
Atmosphereinert N2 atmosphere for annealing
Temperature100
Time0.5
Substrate orientationdielectric film or glass substrate
Work-upCuSCN dissolved at 20 mg mL-1, stirred 12 h at room temperature, filtered through 0.2 um PTFE filter, spin-cast at 3500 rpm for 60 s
Activationannealed at 100 deg C for 30 min
Scalability contextSolution spin-casting process on borosilicate glass/Al gate; bottom-gate architecture described as industrially relevant.
Show 2 structured reagent records
RoleReagentAmount / concentrationSource
Metal Sourcecopper(I) thiocyanate powder (CuSCN, 99%, Sigma-Aldrich)20 mg mL-1p.8-9 · 4.4 CuSCN Solution and Film Preparation · Section 4.4
Solventdiethyl sulfide (DES, 98%, Sigma-Aldrich)Not specifiedp.8-9 · 4.4 CuSCN Solution and Film Preparation · Section 4.4
Complete recipeSource: Main

Route 6: Other

p.9 · 4.5 Antisolvent Treatment of CuSCN · Section 4.5

Metal precursorscommercial CuSCN powder
Linker precursorsthiocyanate already present in CuSCN
Solventsdiethyl sulfide; tetrahydrofuran
Additives100 uL THF antisolvent per condition
Atmospheredry N2 glovebox; annealed under inert N2
Temperature100
Time0.5
Substrate orientationdielectric film
Work-up100 uL THF dispensed halfway during spin-casting at the 30 s mark; spin-cast film then annealed
Activationannealed at 100 deg C for 30 min
Scalability contextSolution spin-casting process on borosilicate glass/Al gate; bottom-gate architecture described as industrially relevant.
Show 3 structured reagent records
RoleReagentAmount / concentrationSource
Metal Sourcecopper(I) thiocyanate powder (CuSCN, 99%, Sigma-Aldrich)20 mg mL-1 in DESp.9 · 4.5 Antisolvent Treatment of CuSCN · Section 4.5
Solventdiethyl sulfideNot specifiedp.9 · 4.5 Antisolvent Treatment of CuSCN · Section 4.5
Additivetetrahydrofuran (THF, >=95%, Honeywell)100 uL · antisolventp.9 · 4.5 Antisolvent Treatment of CuSCN · Section 4.5
Complete recipeSource: Main

Route 7: Other

p.8 · 4.1 Metal Oxide Precursor Solution Preparation; 4.2 Metal Oxide Film Deposition · Sections 4.1-4.2

Metal precursorsgallium nitrate hydrate [Ga(NO3)3.xH2O, 99.9%, Sigma-Aldrich]
Solvents2-methoxyethanol (anhydrous, 99.8%)
Atmosphereambient air for oxide anneal; N2 drying during substrate cleaning
Temperature200, 300, or 400
Time1
Substrate orientationborosilicate glass or Al gate electrode; UV-ozone pretreated
Oxidant / reductantthermal conversion of precursor to oxide
Work-upprecursor stirred 24 h at room temperature, filtered through 0.2 um PTFE filter; spin-cast at 3500 rpm for 30 s; deposition repeated twice
Activationannealed 1 h to convert precursor to oxide and remove solvent
Scalability contextSolution spin-casting process on borosilicate glass/Al gate; bottom-gate architecture described as industrially relevant.
Show 2 structured reagent records
RoleReagentAmount / concentrationSource
Metal Sourcegallium nitrate hydrate [Ga(NO3)3.xH2O, 99.9%, Sigma-Aldrich]0.2 M precursor solutionp.8 · 4.1 Metal Oxide Precursor Solution Preparation; 4.2 Metal Oxide Film Deposition · Sections 4.1-4.2
Solvent2-methoxyethanolanhydrous, 99.8%p.8 · 4.1 Metal Oxide Precursor Solution Preparation; 4.2 Metal Oxide Film Deposition · Sections 4.1-4.2
Complete recipeSource: Main

Route 8: Other

p.8 · 4.1 Metal Oxide Precursor Solution Preparation; 4.2 Metal Oxide Film Deposition · Sections 4.1-4.2

Metal precursorshafnium chloride (HfCl4, 99.9%, Alfa Aesar)
Solvents2-methoxyethanol (anhydrous, 99.8%)
Atmosphereambient air for oxide anneal; N2 drying during substrate cleaning
Temperature200, 300, or 400
Time1
Substrate orientationborosilicate glass or Al gate electrode; UV-ozone pretreated
Oxidant / reductantthermal conversion of precursor to oxide
Work-upprecursor stirred 24 h at room temperature, filtered through 0.2 um PTFE filter; spin-cast at 3500 rpm for 30 s; deposition repeated twice
Activationannealed 1 h to convert precursor to oxide and remove solvent
Scalability contextSolution spin-casting process on borosilicate glass/Al gate; bottom-gate architecture described as industrially relevant.
Show 2 structured reagent records
RoleReagentAmount / concentrationSource
Metal Sourcehafnium chloride (HfCl4, 99.9%, Alfa Aesar)0.2 M precursor solutionp.8 · 4.1 Metal Oxide Precursor Solution Preparation; 4.2 Metal Oxide Film Deposition · Sections 4.1-4.2
Solvent2-methoxyethanolanhydrous, 99.8%p.8 · 4.1 Metal Oxide Precursor Solution Preparation; 4.2 Metal Oxide Film Deposition · Sections 4.1-4.2