Diffraction Structure — Engineering High-k Oxide/CuSCN Interface for p-Channel Thin-Film Transistors

Measurement evidence

Diffraction Structure

Engineering High-k Oxide/CuSCN Interface for p-Channel Thin-Film Transistors · Waiprasoet S., Ittisanronnachai S., Worakajit P. et al. · ACS Applied Electronic Materials · 2024 · 3510-3521

1 measurement group · 5 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Grazing-incidence X-ray diffraction (GIXRD)

X-ray diffraction and scattering

AlOx/TEOS/CuSCN + THF stack · Thin Film

CuSCN films on AlOx, AlOx/MAA, and AlOx/TEOS with and without THF; 2theta range 10-70 deg, Cu Kalpha, incident angle 0.1 deg.

Atmosphere: ambient measurement not specified
Geometry: CuSCN thin film on dielectric
Context: CuSCN/dielectric interface stack
Measurement source: p.6,p.9 · 2.3; 4.8 Grazing Incidence X-ray Diffraction · Figure 4d

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
3R beta-CuSCN diffraction peak (006)	2theta = 16.2 deg	—	—	Text Rounded Reported	p.6 · 2.3 Organic Modification Layer and Antisolvent Treatment · Figure 4d
3R beta-CuSCN diffraction peak (102)	2theta = 27.3 deg	—	—	Text Rounded Reported	p.6 · 2.3 Organic Modification Layer and Antisolvent Treatment · Figure 4d
3R beta-CuSCN diffraction peak (210)	2theta = 47.2 deg	—	—	Text Rounded Reported	p.6 · 2.3 Organic Modification Layer and Antisolvent Treatment · Figure 4d
Scherrer crystallite size	between 4 and 5 nm	—	range 4-5 nm	Text Range	p.6 · 2.3 Organic Modification Layer and Antisolvent Treatment · Figure 4d
THF effect on (006) orientation	THF treatment increased orientation of the (006) direction	—	—	Qualitative Qualitative	p.6 · 2.3 Organic Modification Layer and Antisolvent Treatment · Figure 4d