cMOF Evidence Base
Microscopy Morphology — Engineering High-k Oxide/CuSCN Interface for p-Channel Thin-Film Transistors

Measurement evidence

Microscopy Morphology

Engineering High-k Oxide/CuSCN Interface for p-Channel Thin-Film Transistors · Waiprasoet S., Ittisanronnachai S., Worakajit P. et al. · ACS Applied Electronic Materials · 2024 · 3510-3521

15 measurement groups · 21 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

AFM topographic analysis

Atomic force microscopy

AlOx/CuSCN stack · Thin Film

5 x 5 um2 CuSCN film topography on AlOx-based dielectric, with/without THF treatment.

Atmosphere
ambient measurement not specified
Geometry
CuSCN film on dielectric
Context
CuSCN/dielectric interface stack
Measurement source
p.6 · 2.3 Organic Modification Layer and Antisolvent Treatment · Table 3; Figure S11
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
average grain size Davg139.9 nm——Table
Exact Reported		p.6 · 2.3 Organic Modification Layer and Antisolvent Treatment · Table 3
root-mean-square roughness sigma_rms7.4 nm——Table
Exact Reported		p.6 · 2.3 Organic Modification Layer and Antisolvent Treatment · Table 3

AFM topographic analysis

Atomic force microscopy

AlOx/CuSCN + THF stack · Thin Film

5 x 5 um2 CuSCN film topography on AlOx-based dielectric, with/without THF treatment.

Atmosphere
ambient measurement not specified
Geometry
CuSCN film on dielectric
Context
CuSCN/dielectric interface stack
Measurement source
p.6 · 2.3 Organic Modification Layer and Antisolvent Treatment · Table 3; Figure S11
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
average grain size Davg61.2 nm——Table
Exact Reported		p.6 · 2.3 Organic Modification Layer and Antisolvent Treatment · Table 3
root-mean-square roughness sigma_rms18.4 nm——Table
Exact Reported		p.6 · 2.3 Organic Modification Layer and Antisolvent Treatment · Table 3

AFM topographic analysis

Atomic force microscopy

AlOx/MAA/CuSCN stack · Thin Film

5 x 5 um2 CuSCN film topography on AlOx-based dielectric, with/without THF treatment.

Atmosphere
ambient measurement not specified
Geometry
CuSCN film on dielectric
Context
CuSCN/dielectric interface stack
Measurement source
p.6 · 2.3 Organic Modification Layer and Antisolvent Treatment · Table 3; Figure S11
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
average grain size Davg63.6 nm——Table
Exact Reported		p.6 · 2.3 Organic Modification Layer and Antisolvent Treatment · Table 3
root-mean-square roughness sigma_rms7.4 nm——Table
Exact Reported		p.6 · 2.3 Organic Modification Layer and Antisolvent Treatment · Table 3

AFM topographic analysis

Atomic force microscopy

AlOx/MAA/CuSCN + THF stack · Thin Film

5 x 5 um2 CuSCN film topography on AlOx-based dielectric, with/without THF treatment.

Atmosphere
ambient measurement not specified
Geometry
CuSCN film on dielectric
Context
CuSCN/dielectric interface stack
Measurement source
p.6 · 2.3 Organic Modification Layer and Antisolvent Treatment · Table 3; Figure S11
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
average grain size Davg46.5 nm——Table
Exact Reported		p.6 · 2.3 Organic Modification Layer and Antisolvent Treatment · Table 3
root-mean-square roughness sigma_rms14.3 nm——Table
Exact Reported		p.6 · 2.3 Organic Modification Layer and Antisolvent Treatment · Table 3

AFM topographic analysis

Atomic force microscopy

AlOx/TEOS/CuSCN stack · Thin Film

5 x 5 um2 CuSCN film topography on AlOx-based dielectric, with/without THF treatment.

Atmosphere
ambient measurement not specified
Geometry
CuSCN film on dielectric
Context
CuSCN/dielectric interface stack
Measurement source
p.6 · 2.3 Organic Modification Layer and Antisolvent Treatment · Table 3; Figure S11
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
average grain size Davg101.8 nm——Table
Exact Reported		p.6 · 2.3 Organic Modification Layer and Antisolvent Treatment · Table 3
root-mean-square roughness sigma_rms6.6 nm——Table
Exact Reported		p.6 · 2.3 Organic Modification Layer and Antisolvent Treatment · Table 3

AFM topographic analysis

Atomic force microscopy

AlOx/TEOS/CuSCN + THF stack · Thin Film

5 x 5 um2 CuSCN film topography on AlOx-based dielectric, with/without THF treatment.

Atmosphere
ambient measurement not specified
Geometry
CuSCN film on dielectric
Context
CuSCN/dielectric interface stack
Measurement source
p.6 · 2.3 Organic Modification Layer and Antisolvent Treatment · Table 3; Figure S11
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
average grain size Davg43.2 nm——Table
Exact Reported		p.6 · 2.3 Organic Modification Layer and Antisolvent Treatment · Table 3
root-mean-square roughness sigma_rms15.4 nm——Table
Exact Reported		p.6 · 2.3 Organic Modification Layer and Antisolvent Treatment · Table 3

Atomic force microscopy (AFM)

Atomic force microscopy

AlOx-200 dielectric film · Thin Film

5.0 x 5.0 um2 topographic image; RMS roughness from surface height histogram.

Atmosphere
ambient measurement not specified
Geometry
thin dielectric film
Context
oxide dielectric component
Measurement source
p.2-3 · 2.1 Chemical States and Morphology · Figure 1; Figure S4
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
root-mean-square roughness0.07 nm——Text
Rounded Reported		p.3 · 2.1 Chemical States and Morphology · Figure 1

Atomic force microscopy (AFM)

Atomic force microscopy

AlOx-300 dielectric film · Thin Film

5.0 x 5.0 um2 topographic image; RMS roughness from surface height histogram.

Atmosphere
ambient measurement not specified
Geometry
thin dielectric film
Context
oxide dielectric component
Measurement source
p.2-3 · 2.1 Chemical States and Morphology · Figure 1; Figure S4
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
root-mean-square roughness0.12 nm——Text
Rounded Reported		p.3 · 2.1 Chemical States and Morphology · Figure 1

Atomic force microscopy (AFM)

Atomic force microscopy

AlOx-400 dielectric film · Thin Film

5.0 x 5.0 um2 topographic image; RMS roughness from surface height histogram.

Atmosphere
ambient measurement not specified
Geometry
thin dielectric film
Context
oxide dielectric component
Measurement source
p.2-3 · 2.1 Chemical States and Morphology · Figure 1; Figure S4
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
root-mean-square roughness0.14 nm——Text
Rounded Reported		p.3 · 2.1 Chemical States and Morphology · Figure 1

Atomic force microscopy (AFM)

Atomic force microscopy

GaOx-200 dielectric film · Thin Film

5.0 x 5.0 um2 topographic image; RMS roughness from surface height histogram.

Atmosphere
ambient measurement not specified
Geometry
thin dielectric film
Context
oxide dielectric component
Measurement source
p.2-3 · 2.1 Chemical States and Morphology · Figure 1; Figure S4
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
root-mean-square roughness0.14 nm——Text
Rounded Reported		p.3 · 2.1 Chemical States and Morphology · Figure 1

Atomic force microscopy (AFM)

Atomic force microscopy

GaOx-300 dielectric film · Thin Film

5.0 x 5.0 um2 topographic image; RMS roughness from surface height histogram.

Atmosphere
ambient measurement not specified
Geometry
thin dielectric film
Context
oxide dielectric component
Measurement source
p.2-3 · 2.1 Chemical States and Morphology · Figure 1; Figure S4
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
root-mean-square roughness0.18 nm——Text
Rounded Reported		p.3 · 2.1 Chemical States and Morphology · Figure 1

Atomic force microscopy (AFM)

Atomic force microscopy

GaOx-400 dielectric film · Thin Film

5.0 x 5.0 um2 topographic image; RMS roughness from surface height histogram.

Atmosphere
ambient measurement not specified
Geometry
thin dielectric film
Context
oxide dielectric component
Measurement source
p.2-3 · 2.1 Chemical States and Morphology · Figure 1; Figure S4
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
root-mean-square roughness0.19 nm——Text
Rounded Reported		p.3 · 2.1 Chemical States and Morphology · Figure 1

Atomic force microscopy (AFM)

Atomic force microscopy

HfOx-200 dielectric film · Thin Film

5.0 x 5.0 um2 topographic image; RMS roughness from surface height histogram.

Atmosphere
ambient measurement not specified
Geometry
thin dielectric film
Context
oxide dielectric component
Measurement source
p.2-3 · 2.1 Chemical States and Morphology · Figure 1; Figure S4
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
root-mean-square roughness0.29 nm——Text
Rounded Reported		p.3 · 2.1 Chemical States and Morphology · Figure 1

Atomic force microscopy (AFM)

Atomic force microscopy

HfOx-300 dielectric film · Thin Film

5.0 x 5.0 um2 topographic image; RMS roughness from surface height histogram.

Atmosphere
ambient measurement not specified
Geometry
thin dielectric film
Context
oxide dielectric component
Measurement source
p.2-3 · 2.1 Chemical States and Morphology · Figure 1; Figure S4
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
root-mean-square roughness0.63 nm——Text
Rounded Reported		p.3 · 2.1 Chemical States and Morphology · Figure 1

Atomic force microscopy (AFM)

Atomic force microscopy

HfOx-400 dielectric film · Thin Film

5.0 x 5.0 um2 topographic image; RMS roughness from surface height histogram.

Atmosphere
ambient measurement not specified
Geometry
thin dielectric film
Context
oxide dielectric component
Measurement source
p.2-3 · 2.1 Chemical States and Morphology · Figure 1; Figure S4
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
root-mean-square roughness0.79 nm——Text
Rounded Reported		p.3 · 2.1 Chemical States and Morphology · Figure 1