Waiprasoet S., Ittisanronnachai S., Worakajit P. et al. · ACS Applied Electronic Materials · 2024 · 3510-3521
Open a family to keep every result attached to its sample, method and conditions.
Paraphrased for this database from the authors’ stated interpretations — never quoted verbatim — and kept separate from reported measurements.
CuSCN is presented as a transparent p-type coordination-polymer semiconductor suitable for p-channel thin-film transistors.
Caveat: The paper does not describe CuSCN as a porous MOF; it is a coordination polymer semiconductor.
p.1 · Abstract; Introduction · Abstract
CuSCN films on all tested AlOx-based dielectric/passivation conditions are assigned to the 3R beta-CuSCN phase.
Caveat: Based on GIXRD reflections and comparison with prior reports; no CIF or full structural refinement was supplied.
p.6 · 2.3 Organic Modification Layer · Figure 4d · Linked to 4 structured results
Among AlOx, GaOx, and HfOx dielectrics annealed at 200-400 deg C, AlOx-200 gave the highest average hole mobility and lowest trap state density.
Caveat: Based on BG-TC TFTs with untreated CuSCN and the reported Table 1 device statistics.
p.4 · 2.2 Characteristics of TFTs · Table 1; Figure 3 · Linked to 2 structured results
The authors attribute improved mobility to reduced trap state density and contact resistance when organic passivation and THF antisolvent treatment are combined.
Caveat: Mechanistic attribution is inferred from device-level correlations, XPS surface chemistry, AFM/GIXRD morphology, and contact-resistance trends.
p.8 · Conclusions · Figure 6 · Linked to 3 structured results
Combining TEOS passivation of AlOx with THF antisolvent treatment of CuSCN produced the best TFT performance, with average mobility 6.98 x 10^-3 cm2 V^-1 s^-1 and maximum 8.44 x 10^-3 cm2 V^-1 s^-1.
Caveat: Reported for BG-TC device geometry and low-voltage operation; not a standalone CuSCN bulk conductivity measurement.
p.7-8 · 2.4 Improvements; Conclusions · Table 4; Figure 6 · Linked to 3 structured results
Names and aliases are kept exactly within the paper’s own identity model.
| Material | Composition | Structure context | Source |
|---|---|---|---|
| Copper(I) thiocyanate coordination polymer semiconductor | CuSCNCu(I) centres coordinated by thiocyanate · thiocyanate (SCN-) coordination ligand | unknown · PristineThin films identified as 3R beta-CuSCN by GIXRD with reflections at 2theta = 16.2, 27.3, and 47.2 degrees assigned to (006), (102), and (210). | p.1 · Abstract; Introduction · Abstract |
| High-k oxide/CuSCN BG-TC thin-film transistor stacks | glass/Al/dielectric/CuSCN/AuCu(I) in CuSCN plus Al, Ga, or Hf oxide dielectric component · thiocyanate in CuSCN; optional MAA or TEOS surface modification layer | unknown · CompositeBottom-gate top-contact TFT stack with glass/Al/dielectric/CuSCN/Au layer order. | p.9 · 4.10. Device Fabrication · Section 4.10 |
| Solution-processed high-k oxide dielectric films | AlOx, GaOx, HfOxAl, Ga, or Hf oxide network components · not_applicable | 0D · Model SystemAmorphous high-k dielectric films; GIXRD showed no diffraction peaks up to 400 deg C annealing. | p.4 · 2.2. Characteristics of TFTs · Figure S5 |
Sample form, processing state and composition status define the context for measurements.
| Sample | Form and role | Processing and geometry | Source |
|---|---|---|---|
| Pristine CuSCN thin film from DESresearch_0413__mat__mat_cuscn | Thin Film · Pristine Control · Pristine Framework | Spin-cast from 20 mg mL-1 DES solution; annealed 100 deg C for 30 min under inert N2.dielectric film or borosilicate glass | p.8 · 4.4. CuSCN Solution and Film Preparation · Section 4.4 |
| THF-treated CuSCN thin filmresearch_0413__mat__mat_cuscn | Thin Film · Target Sample · Pristine Framework | CuSCN spin-cast with 100 uL THF dispensed at the 30 s mark; annealed 100 deg C for 30 min under dry N2.dielectric film | p.9 · 4.5. Antisolvent Treatment of CuSCN · Section 4.5 |
| As-received CuSCN powderresearch_0413__mat__mat_cuscn | Powder · Pristine Control · Pristine Framework | Commercial 99% CuSCN powder used as semiconductor precursor. | p.8 · 4.4. CuSCN Solution and Film Preparation · Section 4.4 |
| AlOx-200 dielectric filmresearch_0413__mat__mat_highk_oxide_dielectrics | Thin Film · Model System · Model | Solution-processed AlOx double-layer dielectric annealed at 200 deg C for 1 h in ambient air.borosilicate glass or Al gate · 26.3 +/- 5.6 nm | p.2-3 · 2.1 Chemical States and Morphology; Table 1 · Figure 1; Table 1 |
| AlOx-300 dielectric filmresearch_0413__mat__mat_highk_oxide_dielectrics | Thin Film · Model System · Model | Solution-processed AlOx double-layer dielectric annealed at 300 deg C for 1 h in ambient air.borosilicate glass or Al gate · 24.7 +/- 7.1 nm | p.2-3 · 2.1 Chemical States and Morphology; Table 1 · Figure 1; Table 1 |
| AlOx-400 dielectric filmresearch_0413__mat__mat_highk_oxide_dielectrics | Thin Film · Model System · Model | Solution-processed AlOx double-layer dielectric annealed at 400 deg C for 1 h in ambient air.borosilicate glass or Al gate · 27.6 +/- 7.4 nm | p.2-3 · 2.1 Chemical States and Morphology; Table 1 · Figure 1; Table 1 |
| AlOx/MAA modified dielectricresearch_0413__mat__mat_highk_oxide_dielectrics | Thin Film · Model System · Model | AlOx-200 surface modified with methacrylic acid, annealed 100 deg C for 5 min.AlOx-200 on glass or Al gate · 23.6 +/- 8.8 nm | p.5 · 2.3 Organic Modification Layer · Table 2; Table 4 |
| AlOx/TEOS modified dielectricresearch_0413__mat__mat_highk_oxide_dielectrics | Thin Film · Model System · Model | AlOx-200 surface modified with tetraethyl orthosilicate, annealed 100 deg C for 5 min.AlOx-200 on glass or Al gate · 29.0 +/- 7.5 nm | p.5 · 2.3 Organic Modification Layer · Table 2; Table 4 |
| GaOx-200 dielectric filmresearch_0413__mat__mat_highk_oxide_dielectrics | Thin Film · Model System · Model | Solution-processed GaOx double-layer dielectric annealed at 200 deg C for 1 h in ambient air.borosilicate glass or Al gate · 17.2 +/- 3.7 nm | p.2-3 · 2.1 Chemical States and Morphology; Table 1 · Figure 1; Table 1 |
| GaOx-300 dielectric filmresearch_0413__mat__mat_highk_oxide_dielectrics | Thin Film · Model System · Model | Solution-processed GaOx double-layer dielectric annealed at 300 deg C for 1 h in ambient air.borosilicate glass or Al gate · 16.9 +/- 3.9 nm | p.2-3 · 2.1 Chemical States and Morphology; Table 1 · Figure 1; Table 1 |
| GaOx-400 dielectric filmresearch_0413__mat__mat_highk_oxide_dielectrics | Thin Film · Model System · Model | Solution-processed GaOx double-layer dielectric annealed at 400 deg C for 1 h in ambient air.borosilicate glass or Al gate · 18.4 +/- 4.9 nm | p.2-3 · 2.1 Chemical States and Morphology; Table 1 · Figure 1; Table 1 |
| HfOx-200 dielectric filmresearch_0413__mat__mat_highk_oxide_dielectrics | Thin Film · Model System · Model | Solution-processed HfOx double-layer dielectric annealed at 200 deg C for 1 h in ambient air.borosilicate glass or Al gate · 31.0 +/- 9.4 nm | p.2-3 · 2.1 Chemical States and Morphology; Table 1 · Figure 1; Table 1 |
| HfOx-300 dielectric filmresearch_0413__mat__mat_highk_oxide_dielectrics | Thin Film · Model System · Model | Solution-processed HfOx double-layer dielectric annealed at 300 deg C for 1 h in ambient air.borosilicate glass or Al gate · 38.5 +/- 4.6 nm | p.2-3 · 2.1 Chemical States and Morphology; Table 1 · Figure 1; Table 1 |
| HfOx-400 dielectric filmresearch_0413__mat__mat_highk_oxide_dielectrics | Thin Film · Model System · Model | Solution-processed HfOx double-layer dielectric annealed at 400 deg C for 1 h in ambient air.borosilicate glass or Al gate · 31.4 +/- 5.0 nm | p.2-3 · 2.1 Chemical States and Morphology; Table 1 · Figure 1; Table 1 |
| AlOx/CuSCN stackresearch_0413__mat__mat_cuscn_tft_stack | Thin Film · Target Sample · Composite | AlOx-200 dielectric with untreated CuSCNborosilicate glass/Al gate · AlOx 26.3 +/- 5.6 nm | p.6-7 · 2.4 Improvements in Hole-Transport Properties · Table 3; Table 4 |
| AlOx/CuSCN + THF stackresearch_0413__mat__mat_cuscn_tft_stack | Thin Film · Target Sample · Composite | AlOx-200 dielectric with THF-treated CuSCNborosilicate glass/Al gate · AlOx 26.3 +/- 5.6 nm | p.6-7 · 2.4 Improvements in Hole-Transport Properties · Table 3; Table 4 |
| AlOx/MAA/CuSCN stackresearch_0413__mat__mat_cuscn_tft_stack | Thin Film · Target Sample · Composite | MAA-modified AlOx-200 dielectric with untreated CuSCNborosilicate glass/Al gate · AlOx/MAA 23.6 +/- 8.8 nm | p.6-7 · 2.4 Improvements in Hole-Transport Properties · Table 3; Table 4 |
| AlOx/MAA/CuSCN + THF stackresearch_0413__mat__mat_cuscn_tft_stack | Thin Film · Target Sample · Composite | MAA-modified AlOx-200 dielectric with THF-treated CuSCNborosilicate glass/Al gate · AlOx/MAA 23.6 +/- 8.8 nm | p.6-7 · 2.4 Improvements in Hole-Transport Properties · Table 3; Table 4 |
| AlOx/TEOS/CuSCN stackresearch_0413__mat__mat_cuscn_tft_stack | Thin Film · Target Sample · Composite | TEOS-modified AlOx-200 dielectric with untreated CuSCNborosilicate glass/Al gate · AlOx/TEOS 29.0 +/- 7.5 nm | p.6-7 · 2.4 Improvements in Hole-Transport Properties · Table 3; Table 4 |
| AlOx/TEOS/CuSCN + THF stackresearch_0413__mat__mat_cuscn_tft_stack | Thin Film · Target Sample · Composite | TEOS-modified AlOx-200 dielectric with THF-treated CuSCNborosilicate glass/Al gate · AlOx/TEOS 29.0 +/- 7.5 nm | p.6-7 · 2.4 Improvements in Hole-Transport Properties · Table 3; Table 4 |
| AlOx-200/CuSCN BG-TC TFTresearch_0413__mat__mat_cuscn_tft_stack | Thin Film · Target Sample · Composite | AlOx dielectric annealed 200 deg C; untreated CuSCN channelborosilicate glass/Al gate · 26.3 +/- 5.6 nm | p.3 · 2.2 Characteristics of TFTs · Table 1 |
| AlOx-300/CuSCN BG-TC TFTresearch_0413__mat__mat_cuscn_tft_stack | Thin Film · Target Sample · Composite | AlOx dielectric annealed 300 deg C; untreated CuSCN channelborosilicate glass/Al gate · 24.7 +/- 7.1 nm | p.3 · 2.2 Characteristics of TFTs · Table 1 |
| AlOx-400/CuSCN BG-TC TFTresearch_0413__mat__mat_cuscn_tft_stack | Thin Film · Target Sample · Composite | AlOx dielectric annealed 400 deg C; untreated CuSCN channelborosilicate glass/Al gate · 27.6 +/- 7.4 nm | p.3 · 2.2 Characteristics of TFTs · Table 1 |
| GaOx-200/CuSCN BG-TC TFTresearch_0413__mat__mat_cuscn_tft_stack | Thin Film · Target Sample · Composite | GaOx dielectric annealed 200 deg C; untreated CuSCN channelborosilicate glass/Al gate · 17.2 +/- 3.7 nm | p.3 · 2.2 Characteristics of TFTs · Table 1 |
| GaOx-300/CuSCN BG-TC TFTresearch_0413__mat__mat_cuscn_tft_stack | Thin Film · Target Sample · Composite | GaOx dielectric annealed 300 deg C; untreated CuSCN channelborosilicate glass/Al gate · 16.9 +/- 3.9 nm | p.3 · 2.2 Characteristics of TFTs · Table 1 |
| GaOx-400/CuSCN BG-TC TFTresearch_0413__mat__mat_cuscn_tft_stack | Thin Film · Target Sample · Composite | GaOx dielectric annealed 400 deg C; untreated CuSCN channelborosilicate glass/Al gate · 18.4 +/- 4.9 nm | p.3 · 2.2 Characteristics of TFTs · Table 1 |
| HfOx-200/CuSCN BG-TC TFTresearch_0413__mat__mat_cuscn_tft_stack | Thin Film · Target Sample · Composite | HfOx dielectric annealed 200 deg C; untreated CuSCN channelborosilicate glass/Al gate · 31.0 +/- 9.4 nm | p.3 · 2.2 Characteristics of TFTs · Table 1 |
| HfOx-300/CuSCN BG-TC TFTresearch_0413__mat__mat_cuscn_tft_stack | Thin Film · Target Sample · Composite | HfOx dielectric annealed 300 deg C; untreated CuSCN channelborosilicate glass/Al gate · 38.5 +/- 4.6 nm | p.3 · 2.2 Characteristics of TFTs · Table 1 |
| HfOx-400/CuSCN BG-TC TFTresearch_0413__mat__mat_cuscn_tft_stack | Thin Film · Target Sample · Composite | HfOx dielectric annealed 400 deg C; untreated CuSCN channelborosilicate glass/Al gate · 31.4 +/- 5.0 nm | p.3 · 2.2 Characteristics of TFTs · Table 1 |