cMOF Evidence Base
Spectroscopy — Engineering High-k Oxide/CuSCN Interface for p-Channel Thin-Film Transistors

Measurement evidence

Spectroscopy

Engineering High-k Oxide/CuSCN Interface for p-Channel Thin-Film Transistors · Waiprasoet S., Ittisanronnachai S., Worakajit P. et al. · ACS Applied Electronic Materials · 2024 · 3510-3521

12 measurement groups · 39 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

X-ray photoelectron spectroscopy (XPS)

X-ray photoelectron spectroscopy

AlOx-200 dielectric film · Thin Film

Core-level metal and O 1s spectra; O 1s deconvoluted into lattice oxygen OI and other oxygen OII components.

Atmosphere
high vacuum; samples stored overnight in vacuum
Geometry
thin-film dielectric
Context
oxide dielectric component
Measurement source
p.2 · 2.1 Chemical States and Morphology · Figure S1
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
lattice oxygen OI fraction46.0%——Text
Rounded Reported		p.2 · 2.1 Chemical States and Morphology · Figure S1
other oxygen OII fraction54.0%——Text
Rounded Reported		p.2 · 2.1 Chemical States and Morphology · Figure S1

X-ray photoelectron spectroscopy (XPS)

X-ray photoelectron spectroscopy

AlOx-300 dielectric film · Thin Film

Core-level metal and O 1s spectra; O 1s deconvoluted into lattice oxygen OI and other oxygen OII components.

Atmosphere
high vacuum; samples stored overnight in vacuum
Geometry
thin-film dielectric
Context
oxide dielectric component
Measurement source
p.2 · 2.1 Chemical States and Morphology · Figure S1
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
lattice oxygen OI fraction55.0%——Figure Axis
Approximate		p.2 · 2.1 Chemical States and Morphology · Figure S1
other oxygen OII fraction45.0%——Figure Axis
Approximate		p.2 · 2.1 Chemical States and Morphology · Figure S1

X-ray photoelectron spectroscopy (XPS)

X-ray photoelectron spectroscopy

AlOx-400 dielectric film · Thin Film

Core-level metal and O 1s spectra; O 1s deconvoluted into lattice oxygen OI and other oxygen OII components.

Atmosphere
high vacuum; samples stored overnight in vacuum
Geometry
thin-film dielectric
Context
oxide dielectric component
Measurement source
p.2 · 2.1 Chemical States and Morphology · Figure S1
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
lattice oxygen OI fraction75.9%——Text
Rounded Reported		p.2 · 2.1 Chemical States and Morphology · Figure S1
other oxygen OII fraction24.1%——Text
Rounded Reported		p.2 · 2.1 Chemical States and Morphology · Figure S1

XPS C 1s peak fitting

X-ray photoelectron spectroscopy

AlOx-200 dielectric film · Thin Film

C 1s narrow scan deconvoluted into carbon species; TEOS sample also checked by Si 2p in Figure S10.

Atmosphere
high vacuum
Geometry
modified dielectric film
Context
oxide/passivation interface component
Measurement source
p.5 · 2.3 Organic Modification Layer · Figure 4; Table 2; Figure S10
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
C-C/C-H peak position284.8 eV——Table
Exact Reported		p.5 · 2.3 Organic Modification Layer · Table 2
C-C/C-H peak area ratio67.1%——Table
Exact Reported		p.5 · 2.3 Organic Modification Layer · Table 2
amorphous/disordered C peak position285.3 eV——Table
Exact Reported		p.5 · 2.3 Organic Modification Layer · Table 2
amorphous/disordered C peak area ratio24.7%——Table
Exact Reported		p.5 · 2.3 Organic Modification Layer · Table 2
O-C=O peak position288.8 eV——Table
Exact Reported		p.5 · 2.3 Organic Modification Layer · Table 2
O-C=O peak area ratio8.2%——Table
Exact Reported		p.5 · 2.3 Organic Modification Layer · Table 2

XPS C 1s peak fitting

X-ray photoelectron spectroscopy

AlOx/MAA modified dielectric · Thin Film

C 1s narrow scan deconvoluted into carbon species; TEOS sample also checked by Si 2p in Figure S10.

Atmosphere
high vacuum
Geometry
modified dielectric film
Context
oxide/passivation interface component
Measurement source
p.5 · 2.3 Organic Modification Layer · Figure 4; Table 2; Figure S10
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
C-C/C-H peak position284.8 eV——Table
Exact Reported		p.5 · 2.3 Organic Modification Layer · Table 2
C-C/C-H peak area ratio71.5%——Table
Exact Reported		p.5 · 2.3 Organic Modification Layer · Table 2
amorphous/disordered C peak position285.4 eV——Table
Exact Reported		p.5 · 2.3 Organic Modification Layer · Table 2
amorphous/disordered C peak area ratio18.5%——Table
Exact Reported		p.5 · 2.3 Organic Modification Layer · Table 2
O-C=O peak position288.8 eV——Table
Exact Reported		p.5 · 2.3 Organic Modification Layer · Table 2
O-C=O peak area ratio10.0%——Table
Exact Reported		p.5 · 2.3 Organic Modification Layer · Table 2

XPS C 1s peak fitting

X-ray photoelectron spectroscopy

AlOx/TEOS modified dielectric · Thin Film

C 1s narrow scan deconvoluted into carbon species; TEOS sample also checked by Si 2p in Figure S10.

Atmosphere
high vacuum
Geometry
modified dielectric film
Context
oxide/passivation interface component
Measurement source
p.5 · 2.3 Organic Modification Layer · Figure 4; Table 2; Figure S10
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
C-C/C-H peak position284.8 eV——Table
Exact Reported		p.5 · 2.3 Organic Modification Layer · Table 2
C-C/C-H peak area ratio74.1%——Table
Exact Reported		p.5 · 2.3 Organic Modification Layer · Table 2
amorphous/disordered C peak position285.6 eV——Table
Exact Reported		p.5 · 2.3 Organic Modification Layer · Table 2
amorphous/disordered C peak area ratio13.1%——Table
Exact Reported		p.5 · 2.3 Organic Modification Layer · Table 2
C-O peak position286.7 eV——Table
Exact Reported		p.5 · 2.3 Organic Modification Layer · Table 2
C-O peak area ratio4.9%——Table
Exact Reported		p.5 · 2.3 Organic Modification Layer · Table 2
O-C=O peak position289.0 eV——Table
Exact Reported		p.5 · 2.3 Organic Modification Layer · Table 2
O-C=O peak area ratio7.8%——Table
Exact Reported		p.5 · 2.3 Organic Modification Layer · Table 2
Si 2p binding energy confirming TEOS102.8 eV——Text
Rounded Reported		p.5 · 2.3 Organic Modification Layer · Figure S10

X-ray photoelectron spectroscopy (XPS)

X-ray photoelectron spectroscopy

GaOx-200 dielectric film · Thin Film

Core-level metal and O 1s spectra; O 1s deconvoluted into lattice oxygen OI and other oxygen OII components.

Atmosphere
high vacuum; samples stored overnight in vacuum
Geometry
thin-film dielectric
Context
oxide dielectric component
Measurement source
p.2 · 2.1 Chemical States and Morphology · Figure S2
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
lattice oxygen OI fraction70.7%——Text
Rounded Reported		p.2 · 2.1 Chemical States and Morphology · Figure S2
other oxygen OII fraction29.3%——Text
Rounded Reported		p.2 · 2.1 Chemical States and Morphology · Figure S2

X-ray photoelectron spectroscopy (XPS)

X-ray photoelectron spectroscopy

GaOx-300 dielectric film · Thin Film

Core-level metal and O 1s spectra; O 1s deconvoluted into lattice oxygen OI and other oxygen OII components.

Atmosphere
high vacuum; samples stored overnight in vacuum
Geometry
thin-film dielectric
Context
oxide dielectric component
Measurement source
p.2 · 2.1 Chemical States and Morphology · Figure S2
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
lattice oxygen OI fraction78.0%——Figure Axis
Approximate		p.2 · 2.1 Chemical States and Morphology · Figure S2
other oxygen OII fraction22.0%——Figure Axis
Approximate		p.2 · 2.1 Chemical States and Morphology · Figure S2

X-ray photoelectron spectroscopy (XPS)

X-ray photoelectron spectroscopy

GaOx-400 dielectric film · Thin Film

Core-level metal and O 1s spectra; O 1s deconvoluted into lattice oxygen OI and other oxygen OII components.

Atmosphere
high vacuum; samples stored overnight in vacuum
Geometry
thin-film dielectric
Context
oxide dielectric component
Measurement source
p.2 · 2.1 Chemical States and Morphology · Figure S2
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
lattice oxygen OI fraction85.4%——Text
Rounded Reported		p.2 · 2.1 Chemical States and Morphology · Figure S2
other oxygen OII fraction14.6%——Text
Rounded Reported		p.2 · 2.1 Chemical States and Morphology · Figure S2

X-ray photoelectron spectroscopy (XPS)

X-ray photoelectron spectroscopy

HfOx-200 dielectric film · Thin Film

Core-level metal and O 1s spectra; O 1s deconvoluted into lattice oxygen OI and other oxygen OII components.

Atmosphere
high vacuum; samples stored overnight in vacuum
Geometry
thin-film dielectric
Context
oxide dielectric component
Measurement source
p.2 · 2.1 Chemical States and Morphology · Figure S3
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
lattice oxygen OI fraction72.5%——Text
Rounded Reported		p.2 · 2.1 Chemical States and Morphology · Figure S3
other oxygen OII fraction27.5%——Text
Rounded Reported		p.2 · 2.1 Chemical States and Morphology · Figure S3

X-ray photoelectron spectroscopy (XPS)

X-ray photoelectron spectroscopy

HfOx-300 dielectric film · Thin Film

Core-level metal and O 1s spectra; O 1s deconvoluted into lattice oxygen OI and other oxygen OII components.

Atmosphere
high vacuum; samples stored overnight in vacuum
Geometry
thin-film dielectric
Context
oxide dielectric component
Measurement source
p.2 · 2.1 Chemical States and Morphology · Figure S3
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
lattice oxygen OI fraction83.0%——Figure Axis
Approximate		p.2 · 2.1 Chemical States and Morphology · Figure S3
other oxygen OII fraction17.0%——Figure Axis
Approximate		p.2 · 2.1 Chemical States and Morphology · Figure S3

X-ray photoelectron spectroscopy (XPS)

X-ray photoelectron spectroscopy

HfOx-400 dielectric film · Thin Film

Core-level metal and O 1s spectra; O 1s deconvoluted into lattice oxygen OI and other oxygen OII components.

Atmosphere
high vacuum; samples stored overnight in vacuum
Geometry
thin-film dielectric
Context
oxide dielectric component
Measurement source
p.2 · 2.1 Chemical States and Morphology · Figure S3
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
lattice oxygen OI fraction87.0%——Text
Rounded Reported		p.2 · 2.1 Chemical States and Morphology · Figure S3
other oxygen OII fraction13.0%——Text
Rounded Reported		p.2 · 2.1 Chemical States and Morphology · Figure S3