Porosity — Engineering High-k Oxide/CuSCN Interface for p-Channel Thin-Film Transistors

Measurement evidence

Porosity

Engineering High-k Oxide/CuSCN Interface for p-Channel Thin-Film Transistors · Waiprasoet S., Ittisanronnachai S., Worakajit P. et al. · ACS Applied Electronic Materials · 2024 · 3510-3521

1 measurement group · 1 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

not reported

Pristine CuSCN thin film from DES · Thin Film

No gas sorption or porosity measurement was reported for CuSCN or device films.

Context: CuSCN coordination polymer semiconductor
Measurement source: p.1-12; SI p.1-17 · Full main and SI

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
porosity/surface area	not reported	—	—	Qualitative Qualitative	p.1-12; SI p.1-17 · Full main and SI