Electrical Transport — Synthesis of a highly conductive coordination polymer film via a vapor-solid phase chemical conversion process

3 measurement groups · 10 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

field-effect transistor transfer and output characteristics, Agilent 1500A

Field-effect transistor measurements

Ag5BHT thin-film FET device · Electrode

Room-temperature bottom-gate top-contact FET; mobility calculated in the linear regime from IDS=(W mu Ci/L)(VGS-VT)VDS.

Temperature: room temperature
Geometry: bottom-gate top-contact; heavily doped n-type Si/300 nm SiO2 gate/dielectric; 100 nm Au or Pt source/drain contacts
Context: Ag5BHT thin film active material
Measurement source: 8722 · Results · Fig. 3c,d; Fig. S12

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Highest hole mobilityMarked as a best value within this paper	38 cm^2 V^-1 s^-1	38 cm^2 V^-1 s^-1	—	Text Exact Reported	8722 · Results · Fig. 3c
FET on/off current ratio	did not exhibit a significant magnitude	—	—	Text Qualitative	8722 · Results · Fig. 3c,d
FET polarity	P-type transfer and output transfer curves	—	—	Text Qualitative	8722 · Results · Fig. 3c,d
Routinely obtained hole mobility	over 10 cm^2 V^-1 s^-1	10 cm^2 V^-1 s^-1	—	Text Approximate	8722 · Results · Fig. 3c
Transfer-curve drain-bias labels	0 V, -45 V, and -60 V	—	—	Figure Axis Approximate	8722 · Figure · Fig. 3c

parallel-electrode current-voltage and four-probe electrical conductivity

Electrical conductivity

Ag5BHT thin films · Thin Film

I-V curve of a 270 nm Ag5BHT thin film at 300 K; electrical conductivities with different thicknesses measured using parallel electrodes and four probes connected by conductive silver paste.

Temperature: 300
Geometry: parallel electrodes; four-probe technique for variable-temperature conductance
Context: pristine Ag5BHT thin film
Measurement source: 8722 · Results · Fig. 3a

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Ag5BHT thin-film conductivity at 300 KMarked as a best value within this paper	approximately 10 S cm^-1	10 S cm^-1	—	Text Approximate	8722 · Results · Fig. 3a,b
I-V linearity	linear I-V curves ensure Ohmic contacts	—	—	Text Qualitative	8722 · Results · Fig. 3a
Transport film thickness	270 nm	—	—	Caption Rounded Reported	8722 · Figure caption · Fig. 3a

variable-temperature four-probe conductance

Electrical conductivity

Ag5BHT thin films · Thin Film

Conductivity of a 270 nm Ag5BHT film measured from 300 to 400 K; ln sigma versus T^-1 used for activation energy.

Temperature: 300-400
Atmosphere: temperature controlled by CTI Cryogenics refrigerator
Geometry: four probes connected by conductive silver paste
Context: pristine Ag5BHT thin film
Measurement source: 8722 · Results · Fig. 3b

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Electrical conductivity activation energyMarked as a best value within this paper	6.5 meV within 300-400 K	0.0065 eV	—	Text Exact Reported	8722 · Results · Fig. 3b
Temperature-dependent conductivity trend	slow increase in resistivity upon decrease in temperature from 400 K to 300 K	—	—	Text Qualitative	8722 · Results · Fig. 3b