Li Z., Jin Y., Li C. et al. · Chemical Communications · 2024 · 8720-8723
Open a family to keep every result attached to its sample, method and conditions.
Paraphrased for this database from the authors’ stated interpretations — never quoted verbatim — and kept separate from reported measurements.
Ag5BHT thin films function as p-type FET active layers with hole mobility routinely over 10 cm^2 V^-1 s^-1 and a best value of 38 cm^2 V^-1 s^-1.
Caveat: The FET Ion/Ioff ratio is explicitly described as not significant, and channel dimensions/statistical device table are not reported in the provided documents.
8722 · Results · Fig. 3c,d · Linked to 3 structured results
The Ag5BHT FET devices have limited switching contrast, likely associated with elevated carrier concentrations as in related Cu-BHT/MOF FETs.
Caveat: No numeric on/off ratio or carrier concentration is reported for Ag5BHT in this paper.
8722 · Results · Fig. 3c,d · Linked to 1 structured result
Ag2O/H6BHT precursor films convert completely to crystalline Ag5BHT thin films under isopropanol vapour.
Caveat: EDS S/Ag ratio is higher than the simulated stoichiometric value and the paper attributes this to inhomogeneity in some crystalline nanoparticles.
8722 · Results · Fig. 2, Fig. S10-S11 · Linked to 5 structured results
Ag5BHT film thickness can be controlled by the initial Ag2O film thickness, with post-reaction expansion attributed to coordination-bond formation and increased intermolecular spacing.
Caveat: The paper reports the linear trend but does not provide a fit equation or raw thickness table.
8721 · Results · Fig. 2a, Fig. S5 · Linked to 3 structured results
Pristine Ag5BHT thin films show semiconducting electrical transport with approximately 10 S cm^-1 conductivity at 300 K and a small 6.5 meV activation energy over 300-400 K.
Caveat: Conductivity is reported as approximate/up to 10 S cm^-1; no raw numeric conductivity table is provided.
8722 · Results · Fig. 3a,b · Linked to 3 structured results
Names and aliases are kept exactly within the paper’s own identity model.
| Material | Composition | Structure context | Source |
|---|---|---|---|
| Silver oxide precursor | Ag2OSilver oxide precursor | unknown · UnknownSilver oxide precursor film or powder used to form Ag5BHT under isopropanol vapour with H6BHT. | SI p001 · Materials |
| Ag2O/H6BHT precursor bilayer film | Ag2O/H6BHT layered precursorAg2O layer · H6BHT layer | unknown · CompositeLayered solid precursor stack prior to vapour-solid conversion. | 8721 · Results · Fig. S7 |
| Ag5BHTBrowse family: Ag₅(C₆S₆) / Ag–BHT | Ag5BHT; BHT = benzenehexanothiolateAg(I) centres with Ag1 square-planar coordination and Ag2 distorted octahedral coordination · BHT / benzenehexanothiolate derived from H6BHT (benzenehexathiol) | 2D · PristineConductive coordination polymer with Ag1 metal-dithiolene polymer chains and Ag2 atoms arranged in a graphene-like layered structure; PXRD peaks assigned to (110), (020), (220), (50-1), and (330) planes. | 8720 · Introduction · Fig. 1a-c |
| H6BHT linker | H6BHT / benzenehexathiolBenzenehexathiol | 0D · UnknownMolecular thiol linker used as the BHT source; TGA was used to assess thermal stability for evaporation. | SI p001 · Materials |
Sample form, processing state and composition status define the context for measurements.
| Sample | Form and role | Processing and geometry | Source |
|---|---|---|---|
| Ag2O film without H6BHTresearch_0732__mat__mat_ag2o | Thin Film · Pristine Control · Unknown | Ag film plasma-oxidised to Ag2O and exposed to isopropanol post-reaction without evaporated H6BHT.Si, Si/SiO2 wafer, or glass substrates when prepared analogously | 8721 · Results · Fig. S6 |
| Ag2O/H6BHT precursor bilayer filmresearch_0732__mat__mat_ag2o_h6bht_stack | Thin Film · Composite Component · Composite | Ag2O film overcoated with H6BHT by thermal evaporation before isopropanol-vapour conversion.Si, Si/SiO2 wafer, or glass substrates · 223.74 nm before reaction for 100 nm Ag2O plus 130 nm H6BHT | 8721 · Results · Fig. S5-S7 |
| Ag5BHT thin-film FET deviceresearch_0732__mat__mat_ag5bht | Electrode · Target Sample · Pristine Framework | Ag5BHT active film with 100 nm Au or Pt source/drain electrodes in a bottom-gate top-contact geometry.heavily doped n-type Si with 300 nm SiO2 | SI p001 · Device Fabrication · Fig. S12 |
| Ag5BHT powder from solution reactionresearch_0732__mat__mat_ag5bht | Powder · Pristine Control · Pristine Framework | Dark green powder from Ag2O and H6BHT in degassed isopropanol under argon, filtered, washed with water, methanol, and acetone, and vacuum dried. | SI p001 · Synthesis of Ag5BHT powder |
| Crystalline Ag5BHT powder from vapour-solid conversionresearch_0732__mat__mat_ag5bht | Powder · Target Sample · Pristine Framework | Ag2O powder and H6BHT powder heated in a sealed vessel saturated with isopropanol vapour. | 8721 · Results · Fig. S2-S4 |
| Scraped Ag5BHT thin-film powderresearch_0732__mat__mat_ag5bht | Powder · Target Sample · Pristine Framework | Thin film repeatedly scraped off to obtain powder for PXRD. | 8721 · Results · Fig. 2b |
| Ag5BHT thin filmsresearch_0732__mat__mat_ag5bht | Thin Film · Target Sample · Pristine Framework | Ag film thermally evaporated, plasma-oxidised to Ag2O, coated with H6BHT by thermal evaporation, and converted under isopropanol vapour at 90-120 deg C for several days.Si, Si/SiO2 wafer, or glass substrates; inert substrate in SI · controllable 100-300 nm; example post-reaction thickness 292.18 nm from 100 nm Ag2O plus 130 nm H6BHT; 270 nm film used for Fig. 3 transport | 8721 · Results · Fig. 1d |
| H6BHT linkerresearch_0732__mat__mat_h6bht | Powder · Pristine Control · Unknown | Linker precursor used for thermal stability and FT-IR comparisons. | 8721 · Results · Fig. S1 |