Partial recipeSource: SI
Route 1: Other
SI p001 · Device Fabrication
Metal precursorsPreformed Ag5BHT thin film; Au or Pt contacts
Solventsdeionised water and isopropanol cleaning solvents
Additivespiranha solution, 70/30 vol./vol. H2SO4/H2O2, for substrate cleaning
AtmosphereN2 blow-dry after cleaning
Substrate orientationheavily doped n-type Si wafer with 300 nm SiO2
Oxidant / reductantH2SO4/H2O2 piranha clean only
Work-upSubstrates cleaned with deionised water, piranha solution, deionised water, isopropanol, and blow-dried by N2; 100 nm Au or Pt source/drain electrodes evaporated.
Show 5 structured reagent records
| Role | Reagent | Amount / concentration | Source |
|---|---|---|---|
| Other | heavily doped n-type Si wafer with 300 nm SiO2 | Not specified | SI p001 · Device Fabrication |
| Acid | H2SO4/H2O2 piranha solution | 70/30 vol./vol. | SI p001 · Device Fabrication |
| Solvent | deionised water | cleaning solvent | SI p001 · Device Fabrication |
| Solvent | isopropanol | cleaning solvent | SI p001 · Device Fabrication |
| Other | Au or Pt source and drain electrodes | 100 nm thick | SI p001 · Device Fabrication |