Electrical Transport — Uniaxially Oriented Electrically Conductive Metal-Organic Framework Nanosheets Assembled at Air/Liquid Interfaces

4 measurement groups · 12 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

HITP-Ni-NS 5-cycle FET device · Electrode

ID-VD curves recorded with VG = -10, -5, 0, 5 and 10 V over VD = -10 to 10 V.

Geometry: SiO2/Si substrate, 40 nm Au electrodes, 2 mm channel width, 100 um channel length
Context: pristine target nanosheet FET
Measurement source: S29 / p029 · Figure S24 caption · Figure S24

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
current modulation at VD = 1 V	about 1 microA	—	—	Caption Approximate	S29 / p029 · Figure S24 caption · Figure S24
reported ID on/off ratio at VD = 1 V	10^-6	—	—	Text Exact Reported	54576 / p007 · Electrical Conductivity · Figure S24
linear ID-VD range	-10 to 10 V	—	range endpoint	Caption Range	S29 / p029 · Figure S24 caption · Figure S24

HATP-water-NS 10-cycle control device · Electrode

HATP-water-NS control with 10 deposition cycles on SiO2/Si.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
approximate HATP-water-NS current scale	about +/-20 pA across +/-1 V	—	visual estimate from axis	Figure Axis Uncertain	S30 / p030 · Figure S25 · Figure S25
HATP-water-NS I-V behaviour	non-linear hysteretic insulating behaviour	—	—	Caption Qualitative	S30 / p030 · Figure S25 caption · Figure S25

HITP-Ni-NS-2c top-contact device · Electrode

HITP-Ni-NS with 2 deposition cycles on SiO2/Si.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
planar electrical conductivity of HITP-Ni-NS-2c	0.02 S cm-1	—	—	Caption Exact Reported	S27 / p027 · Figure S22 caption · Figure S22
approximate current at +1 V for 2-cycle device	about +0.9 microA at +1 V	—	visual estimate from rendered Figure S22	Figure Axis Uncertain	S27 / p027 · Figure S22 · Figure S22
HITP-Ni-NS-2c thickness	27.8 nm (13.9 nm x 2)	—	calculated from 13.9 nm x 2	Calculated From Reported Exact Reported	54576 / p007 · Electrical Conductivity · Figure S22

HITP-Ni-NS-5c top-contact device · Electrode

Keithley 4200-SCS in the dark; room-temperature planar conductivity; 40 nm Au contacts, channel length 100 um, width 2 mm.

Temperature: room temperature
Atmosphere: dark
Geometry: top-contact Au/HITP-Ni-NS/SiO2/Si; 100 um channel length, 2 mm width, 40 nm Au
Context: pristine target nanosheet device
Measurement source: 54572 and 54576 / p003, p007 · Planar Electrical Conductivity Measurements · Figure 6

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
planar electrical conductivity of HITP-Ni-NS-5cMarked as a best value within this paper	0.6 S cm-1	—	—	Text Exact Reported	54576 / p007 · Electrical Conductivity · Figure 6
replicate planar conductivity of HITP-Ni-NS-5c	0.5 S cm-1	—	—	Caption Exact Reported	S25 / p025 · Figure S20 caption · Figure S20
approximate current at +1 V	about +80 microA at +1 V	—	visual estimate from axis	Figure Axis Uncertain	54576 / p007 · Figure 6 · Figure 6
HITP-Ni-NS-5c total thickness	about 70 nm (13.9 nm x 5)	—	calculated from 13.9 nm x 5	Calculated From Reported Approximate	54576 / p007 · Electrical Conductivity · Figure 6