synchrotron grazing-incidence XRD and out-of-plane XRD
HITP-Ni-NS on Si at pi = 10 mN m-1 · Thin Film
HITP-Ni-NS on Si; lambda = 1.24 Angstrom; in-plane incident angle alpha = 0.16 degrees; SPring-8 at room temperature under helium.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| in-plane lattice parameter a | a = 21.36(1) Angstrom | — | 0.01 Angstrom | Text Exact Reported | 54575 / p006 · Nanosheet Structure and Orientation Confirmed by Synchrotron X-ray Crystallography · Figure 5 |
| in-plane lattice parameter b | b = 21.36(1) Angstrom | — | 0.01 Angstrom | Text Exact Reported | 54575 / p006 · Nanosheet Structure and Orientation Confirmed by Synchrotron X-ray Crystallography · Figure 5 |
| Pawley refinement reliability factor Rwp | 3.62% | — | — | Caption Exact Reported | S19 / p019 · Figure S14 caption · Figure S14 |
| interlayer distance | 3.22(1) Angstrom | — | 0.01 Angstrom | Text Exact Reported | 54575 / p006 · Nanosheet Structure and Orientation Confirmed by Synchrotron X-ray Crystallography · Figure 5d |
| out-of-plane diffraction peak Q | about 1.95 A-1 | — | — | Text Approximate | 54575 / p006 · Nanosheet Structure and Orientation Confirmed by Synchrotron X-ray Crystallography · Figure 5c |