Diffraction Structure — Uniaxially Oriented Electrically Conductive Metal-Organic Framework Nanosheets Assembled at Air/Liquid Interfaces

Measurement evidence

Diffraction Structure

Uniaxially Oriented Electrically Conductive Metal-Organic Framework Nanosheets Assembled at Air/Liquid Interfaces · Ohata T., Nomoto A., Watanabe T. et al. · ACS Applied Materials and Interfaces · 2021 · 54570-54578

3 measurement groups · 7 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

synchrotron grazing-incidence XRD and out-of-plane XRD

HITP-Ni-NS on Si at pi = 10 mN m-1 · Thin Film

HITP-Ni-NS on Si; lambda = 1.24 Angstrom; in-plane incident angle alpha = 0.16 degrees; SPring-8 at room temperature under helium.

Temperature
room temperature
Atmosphere
helium gas
Context
pristine target nanosheet
Measurement source
54572 and 54575 / p003-p006 · Grazing-Incident Synchrotron X-ray Diffraction Measurements · Figure 5
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
in-plane lattice parameter aa = 21.36(1) Angstrom0.01 AngstromText
Exact Reported
54575 / p006 · Nanosheet Structure and Orientation Confirmed by Synchrotron X-ray Crystallography · Figure 5
in-plane lattice parameter bb = 21.36(1) Angstrom0.01 AngstromText
Exact Reported
54575 / p006 · Nanosheet Structure and Orientation Confirmed by Synchrotron X-ray Crystallography · Figure 5
Pawley refinement reliability factor Rwp3.62%Caption
Exact Reported
S19 / p019 · Figure S14 caption · Figure S14
interlayer distance3.22(1) Angstrom0.01 AngstromText
Exact Reported
54575 / p006 · Nanosheet Structure and Orientation Confirmed by Synchrotron X-ray Crystallography · Figure 5d
out-of-plane diffraction peak Qabout 1.95 A-1Text
Approximate
54575 / p006 · Nanosheet Structure and Orientation Confirmed by Synchrotron X-ray Crystallography · Figure 5c

synchrotron in-plane and out-of-plane XRD

HATP-water-NS control · Nanosheet

HATP-water-NS on silicon substrate with 45 deposition cycles at pi = 10 mN m-1.

Context
nickel-free control
Measurement source
S24 / p024 · Figure S19 caption · Figure S19
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
HATP-water-NS crystalline diffraction peaksno peaks observed; halo in in-plane XRDCaption
Qualitative
S24 / p024 · Figure S19 caption · Figure S19

GIXRD with Cu Kalpha X-ray source plus IR comparison

HITP-Ni-NS deposited immediately at pi = 0 mN m-1 · Thin Film

HITP-Ni-NS deposited at pi = 0 mN m-1; SmartLab Rigaku at room temperature; alpha = 0.19 degrees.

Temperature
room temperature
Context
zero-compression target sample
Measurement source
S5 and S23 / p005, p023 · Grazing-incident (GI) X-ray diffraction (XRD) measurements with Cu Kalpha X-ray source · Figure S18
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
pi = 0 and pi = 10 XRD/IR comparisonidentical XRD profiles and IR spectraCaption
Qualitative
S23 / p023 · Figure S18 caption · Figure S18