Electrical Transport — Electrochemical Synthesis of Large Area Two-Dimensional Metal–Organic Framework Films on Copper Anodes

7 measurement groups · 10 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Cu3(HHTP)2 film transferred to SiO2/Si with Au source-drain electrodes · Thin Film

Resistance statistics over devices exposed to atmosphere for up to 100 days.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Ambient stability duration	100 days exposure with excellent electrical performance	—	—	Text Rounded Reported	main p.3 · Electrical properties · Figure S23

Cu3(HHTP)2 film transferred to SiO2/Si with Au source-drain electrodes · Thin Film

Film transferred to SiO2/Si; Au source-drain electrodes; room temperature.

Temperature: room temperature
Atmosphere: Not stated
Geometry: ca. 30-60 um channel lengths, ca. 2100 um width, ca. 20 nm film thickness
Context: Pristine Cu3(HHTP)2 MOF film
Measurement source: SI p.S2 · Fabrication and measurement of devices

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Electrical conductivity of Cu3(HHTP)2 filmMarked as a best value within this paper	0.0874 S cm-1	—	—	Text Exact Reported	main p.2 · Synthesis/characterisation
Mean conductivity with uncertainty	0.087 +/- 0.004 S cm-1	—	+/- 0.004 S cm-1	Text Rounded Reported	main p.3 · Electrical properties · Figure 3
Previously reported polycrystalline MOF film conductivity comparator	10^-4 S cm-1	—	—	Text Approximate	main p.3 · Electrical properties
Previously reported single-crystal Cu3(HHTP)2 conductivity comparator	0.2 S cm-1	—	—	Text Rounded Reported	main p.3 · Electrical properties

Cu3(HHTP)2 film transferred to SiO2/Si with Au source-drain electrodes · Thin Film

FET measured in N2 at room temperature; Vds = 5 V for transfer curve; channel length about 40 um, width about 2100 um.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Calculated field-effect mobilityMarked as a best value within this paper	about 0.08 cm2 V-1 s-1	—	—	Text Approximate	main p.3 · Electrical properties · Figure S24
Carrier type from transfer curve	IDS increases with decreasing VG; p-type behaviour	—	—	Qualitative Qualitative	main p.3 · Electrical properties · Figure S24

Cu3(HHTP)2 film transferred to PEN flexible substrate · Thin Film

PEN substrate; curvature radius ca. 1.5 cm; ca. 40 um channel length; ca. 2400 um channel width; ca. 20 nm film.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Flexible-device resistance under bending	minor variation with bending times	—	—	Qualitative Qualitative	main p.3 · Electrical properties · Figure 3f

Cu3(HHTP)2 film transferred to SiO2/Si with Au source-drain electrodes · Thin Film

Room-temperature devices; channel lengths 30-60 um; channel width ca. 2100 um; film thickness ca. 20 nm.

Temperature: room temperature
Atmosphere: Not stated for I-V; FET measurements in N2
Geometry: Au source-drain electrodes; ca. 2100 um channel width; ca. 20 nm film thickness
Context: Pristine Cu3(HHTP)2 MOF film
Measurement source: main p.3 · Electrical properties · Figure 3c

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Electrical-device film thickness	ca. 20 nm	—	—	Caption Approximate	main p.3 · Figure caption · Figure 3c-f

Cu3(HHTP)2 film transferred to SiO2/Si with Au source-drain electrodes · Thin Film

ca. 30 um channel length, ca. 2100 um channel width, ca. 20 nm film thickness.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source

Cu3(HHTP)2 film transferred to SiO2/Si with Au source-drain electrodes · Thin Film

Conductivity normalised to conductivity at 300 K; plotted versus T and 1000/T.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Temperature dependence of normalised conductivity	conductivity increases with temperature; ln(sigma) vs T^-1 linear	—	—	Qualitative Qualitative	SI p.S25 · Section 21 · Figure S25