Electrolytic current and calculated Cu electrolysis rate versus applied potential
As-grown Cu3(HHTP)2 MOF film on single-crystal Cu(100) anode · Thin Film
Electrolysis rate V_Cu2+ calculated from Q = It = 2 n_Cu2+ F and divided by surface area and time.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| High electrolysis rate producing particles | 7.85 x 10^-10 mol cm-2 s-1 | — | — | Caption Exact Reported | SI p.S8 · Section 7 · Figure S7d |
| High electrolysis rate producing particles | 10.55 x 10^-10 mol cm-2 s-1 | — | — | Caption Exact Reported | SI p.S8 · Section 7 · Figure S7e |
| Highest electrolysis rate producing particles | 12.82 x 10^-10 mol cm-2 s-1 | — | — | Caption Exact Reported | SI p.S8 · Section 7 · Figure S7f |
| Low electrolysis rate supporting film growth | 2.582 x 10^-10 mol cm-2 s-1 | — | — | Caption Exact Reported | SI p.S8 · Section 7 · Figure S7a |
| Electrolysis rate morphology point | 4.061 x 10^-10 mol cm-2 s-1 | — | — | Caption Exact Reported | SI p.S8 · Section 7 · Figure S7b |
| Electrolysis rate morphology point | 5.33 x 10^-10 mol cm-2 s-1 | — | — | Caption Exact Reported | SI p.S8 · Section 7 · Figure S7c |
| Cu oxidation threshold voltage | above 0.13 V | — | — | Text Approximate | main p.3 · Growth mechanism · Figure S5 |