Microscopy Morphology — Electrochemical Synthesis of Large Area Two-Dimensional Metal–Organic Framework Films on Copper Anodes

Measurement evidence

Microscopy Morphology

Electrochemical Synthesis of Large Area Two-Dimensional Metal–Organic Framework Films on Copper Anodes · Liu Y., Wei Y., Liu M. et al. · Angewandte Chemie - International Edition · 2021 · 2887-2891

4 measurement groups · 13 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

AFM morphology, terrace height, thickness and roughness

As-grown Cu3(HHTP)2 MOF film on single-crystal Cu(100) anode · Thin Film

As-grown or transferred Cu3(HHTP)2 films; in-situ AFM for 10 x 10 mm regions on Cu foil.

Context
Pristine Cu3(HHTP)2 MOF film
Measurement source
main p.2 · Characterisation · Figure 1f/S11/S12
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
AFM terrace step height 13.5 nmText
Rounded Reported
main p.2 · Characterisation · Figure 1f
AFM terrace step height 28.8 nmText
Rounded Reported
main p.2 · Characterisation · Figure 1f
Upper limit of Cu3(HHTP)2 film thicknessabout 60 nm; measured 59.79 nmCaption
Rounded Reported
SI p.S12 · Section 9 · Figure S11
Average Ra roughnessRa average 1.6 nmText
Rounded Reported
SI p.S13 · Section 10 · Figure S12
RMS roughness from AFM imageRMS roughness about 2.5 nmCaption
Approximate
SI p.S12 · Section 9 · Figure S11
Average Rq roughnessRq average 2.3 nmText
Rounded Reported
SI p.S13 · Section 10 · Figure S12

Graphical coverage ratio versus applied voltage and reaction time

As-grown Cu3(HHTP)2 MOF film on single-crystal Cu(100) anode · Thin Film

Coverage plotted for 0.15, 0.20, 0.40 and 0.80 V over reaction time.

Geometry
Cu foil growth surface
Context
Pristine Cu3(HHTP)2 film growth
Measurement source
SI p.S15 · Section 11 · Figure S15
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Coverage at 0.40 V after 3000 sabout 100% at 3000 sgraphical estimateFigure Axis
Approximate
SI p.S15 · Section 11 · Figure S15
Coverage at 0.80 V after 1500 sabout 100% at 1500 sgraphical estimateFigure Axis
Approximate
SI p.S15 · Section 11 · Figure S15

Optical microscopy and SEM

As-grown Cu3(HHTP)2 MOF film on single-crystal Cu(100) anode · Thin Film

Large-area Cu foil film, optical image and SEM image; Cu passing-rate and reaction-rate morphology in SI.

Context
Pristine Cu3(HHTP)2 MOF film
Measurement source
SI p.S4 · Section 3 · Figure S2
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Annealed Cu(100) substrate XRD peak2theta = 50.61 degText
Exact Reported
SI p.S5 · Section 4 · Figure S3
Large-area film diameter4-inch Cu3(HHTP)2 filmCaption
Rounded Reported
main p.3 · Electrical properties · Figure 3a
Cu-anode passing rate for full coverage0.5 cm min-1 gives 100% coverage100 % coverageText
Rounded Reported
SI p.S4 · Section 3 · Figure S2

TEM, HRTEM and SAED

As-grown Cu3(HHTP)2 MOF film on single-crystal Cu(100) anode · Thin Film

Microstructure of Cu3(HHTP)2 MOF film; comparison with other methods in SI.

Context
Pristine Cu3(HHTP)2 MOF film
Measurement source
main p.2 · Structure · Figure 2c-d/S20
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Average crystalline domain sizenearly 80 nmText
Approximate
main p.2 · Structure · Figure S20a
HRTEM lattice spacing for (100) planeabout 2.1 nmText
Approximate
main p.2 · Structure · Figure 2d