cMOF Evidence Base
Electrical Transport — Porous field-effect transistors based on a semiconductive metal-organic framework

Measurement evidence

Electrical Transport

Porous field-effect transistors based on a semiconductive metal-organic framework · Wu G., Huang J., Zang Y. et al. · Journal of the American Chemical Society · 2017 · 1360-1363

2 measurement groups · 10 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Field-effect transistor output and transfer characteristics

Field-effect transistor measurements

Ni3(HITP)2-based porous FET device 1 · Electrode

Device characteristics measured in air or N2 at room temperature with Keithley 4200 SCS; mobility calculated in the linear regime using Ids = (W mu Ci/L)(Vgs - Vth)Vds with Ci = 11 nF/cm2, Vth = 1.1 V and Vds = -1 V.

Temperature
300
Atmosphere
air or N2
Geometry
Bottom-gate top-contact; W = 1000 um, L = 100 um, 300 nm SiO2 dielectric, 50 nm Au source/drain.
Context
pristine Ni3(HITP)2 active channel
Measurement source
SI p.S3 · Methods · Figure 3; Figure S9
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Charge-carrier typep-type transistor with holes as majority carriers——Text
Qualitative		main p.3 / article p.1362 · Results and discussion · Figure 3b
Field-effect hole mobility for device 1Marked as a best value within this paperapproximately 48.6 cm2 V^-1 s^-1——Text
Approximate		main p.3 / article p.1362 · Results and discussion · Figure S12
Current on/off ratio for device 1Marked as a best value within this paperapproximately 2 x 10^3——Text
Approximate		main p.3 / article p.1362 · Results and discussion · Figure 3b
Interface defect density Nt8.2 x 10^12 cm^-2——Text
Exact Reported		main p.3 / article p.1362 · Results and discussion
Transistor saturation behaviourNo transistor characteristic saturation observed; on/off ratios reduced with increasing Vds——Text
Qualitative		main p.3 / article p.1362 · Results and discussion · Figure S13
Output-curve contact behaviourGood linear regimes indicating good Ohmic contact——Text
Qualitative		main p.2 / article p.1361 · Results and discussion · Figure 3a
Subthreshold swing2.4 V/decade——Text
Exact Reported		main p.3 / article p.1362 · Results and discussion
Threshold voltageapproximately 1.1 V——Text
Approximate		main p.3 / article p.1362 · Results and discussion · Figure S9

Field-effect transistor transfer characteristics for device-to-device reproducibility

Field-effect transistor measurements

Five additional Ni3(HITP)2-based porous FETs on the same SiO2/Si substrate · Electrode

Five additional devices on the same SiO2/Si substrate characterised at Vds = -1 V; mobility and on/off ratios compared by histograms.

Temperature
300
Atmosphere
air or N2
Geometry
Same nominal bottom-gate top-contact geometry as device 1.
Context
pristine Ni3(HITP)2 active channels
Measurement source
main p.3 / article p.1362 · Results and discussion · Figures S10-S12
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Field-effect hole mobility for five other devices38 +/- 8 cm2 V^-1 s^-1—+/- 8 cm2 V^-1 s^-1Text
Rounded Reported		main p.3 / article p.1362 · Results and discussion · Figure S12
Current on/off ratio range for devices 2-6between 350 and 2000—range 350-2000Text
Range		main p.3 / article p.1362 · Results and discussion · Figure S11