Diffraction Structure — Porous field-effect transistors based on a semiconductive metal-organic framework

Measurement evidence

Diffraction Structure

Porous field-effect transistors based on a semiconductive metal-organic framework · Wu G., Huang J., Zang Y. et al. · Journal of the American Chemical Society · 2017 · 1360-1363

1 measurement group · 4 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

PXRD / XRD, in-plane and out-of-plane geometries

X-ray diffraction and scattering

Free-standing Ni3(HITP)2 membrane · Thin Film

Rigaku Miniflex 600 with Cu Kalpha radiation, lambda = 1.54056 A; samples placed on zero-background silicon.

Context: pristine Ni3(HITP)2 membrane
Measurement source: main p.2 / article p.1361 · Results and discussion · Figure S3; Figure S6

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Layer stacking interval	3.5 A	—	—	Text Rounded Reported	main p.2 / article p.1361 · Results and discussion · Figure 1a
Preferred orientation assessment	No preferred orientation	—	—	Text Qualitative	main p.2 / article p.1361 · Results and discussion · Figure S3
Open window size of 1D channels	approximately 1.4 nm	—	—	Text Approximate	main p.2 / article p.1361 · Results and discussion · Figure 1a
In-plane and out-of-plane XRD peak positions	2theta = 4.7, 9.5, 12.6, 16.5, and 27.3 deg	—	—	Text Rounded Reported	main p.2 / article p.1361 · Results and discussion · Figure S3