Microscopy Morphology — Porous field-effect transistors based on a semiconductive metal-organic framework

Measurement evidence

Microscopy Morphology

Porous field-effect transistors based on a semiconductive metal-organic framework · Wu G., Huang J., Zang Y. et al. · Journal of the American Chemical Society · 2017 · 1360-1363

2 measurement groups · 8 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Cross-sectional SEM and optical microscopy

Ni3(HITP)2-based porous FET device 1 · Electrode

Device geometry checked by cross-sectional SEM and top-view optical microscopy.

Geometry
Bottom-gate top-contact FET, 105 nm Ni3(HITP)2 channel, 300 nm SiO2 dielectric, 50 nm Au contacts, W/L = 1000/100 um.
Context
pristine Ni3(HITP)2 channel in device stack
Measurement source
main p.2 / article p.1361 · Results and discussion · Figure S8
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
FET active channel membrane thickness105 nmText
Exact Reported
main p.2 / article p.1361 · Results and discussion · Figure S8
Au source/drain electrode thickness50 nmText
Exact Reported
main p.2 / article p.1361 · Results and discussion · Figure S8
FET channel length100 umText
Exact Reported
main p.2 / article p.1361 · Results and discussion · Figure S8
FET channel width1000 umText
Exact Reported
main p.2 / article p.1361 · Results and discussion · Figure S8

SEM and AFM

Free-standing Ni3(HITP)2 membrane · Thin Film

SEM used to evaluate top and bottom membrane surfaces after transfer onto silicon wafer; AFM measured top-surface roughness over 3 um x 3 um and 20 um x 20 um areas.

Context
pristine Ni3(HITP)2 membrane
Measurement source
main p.2 / article p.1361 · Results and discussion · Figure 1c,d; Figures S4,S5
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Membrane thickness after 3 min reactionapproximately 100 nmText
Approximate
main p.2 / article p.1361 · Results and discussion
Top-surface morphologyultraflat, compact, uniform on a large scale, without steps or cracksText
Qualitative
main p.2 / article p.1361 · Results and discussion · Figure 1c; Figure S4
Average RMS roughness over nine selected 20 um x 20 um areasapproximately 1.43 nmText
Approximate
main p.2 / article p.1361 · Results and discussion · Figure S5
Top-surface RMS roughness over 3 um x 3 umapproximately 1.05 nm over an area of 3 um x 3 umText
Approximate
main p.2 / article p.1361 · Results and discussion · Figure 1d