Cross-sectional SEM and optical microscopy
Ni3(HITP)2-based porous FET device 1 · Electrode
Device geometry checked by cross-sectional SEM and top-view optical microscopy.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| FET active channel membrane thickness | 105 nm | — | — | Text Exact Reported | main p.2 / article p.1361 · Results and discussion · Figure S8 |
| Au source/drain electrode thickness | 50 nm | — | — | Text Exact Reported | main p.2 / article p.1361 · Results and discussion · Figure S8 |
| FET channel length | 100 um | — | — | Text Exact Reported | main p.2 / article p.1361 · Results and discussion · Figure S8 |
| FET channel width | 1000 um | — | — | Text Exact Reported | main p.2 / article p.1361 · Results and discussion · Figure S8 |