Porosity — Porous field-effect transistors based on a semiconductive metal-organic framework

Measurement evidence

Porosity

Porous field-effect transistors based on a semiconductive metal-organic framework · Wu G., Huang J., Zang Y. et al. · Journal of the American Chemical Society · 2017 · 1360-1363

1 measurement group · 4 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

N2 adsorption/desorption and surface-area analysis

Gas sorption and porosity

Ni3(HITP)2 powder acquired from membrane · Powder

Gas adsorption measured on ASAP 2020; N2 sorption isotherms measured at 77 K on powder acquired from membrane.

Temperature: 77
Atmosphere: N2
Context: pristine Ni3(HITP)2 powder from membrane
Measurement source: main p.2 / article p.1361 · Results and discussion · Figure S2

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
BET specific surface area	625 m2/g	—	—	Text Exact Reported	main p.2 / article p.1361 · Results and discussion · Figure S2
Langmuir surface area	912 m2/g	—	—	Figure Axis Approximate	SI p.S5 · Additional Figures · Figure S2
Permanent porosity assessment	Significant gas uptake and release during adsorption/desorption, indicating permanent porosity	—	—	Text Qualitative	main p.2 / article p.1361 · Results and discussion · Figure S2
Pore volume	0.511 cm3/g	—	—	Text Exact Reported	main p.2 / article p.1361 · Results and discussion · Figure S2