cMOF Evidence Base
Spectroscopy — Porous field-effect transistors based on a semiconductive metal-organic framework

Measurement evidence

Spectroscopy

Porous field-effect transistors based on a semiconductive metal-organic framework · Wu G., Huang J., Zang Y. et al. · Journal of the American Chemical Society · 2017 · 1360-1363

1 measurement group · 2 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

X-ray photoelectron spectroscopy (XPS)

X-ray photoelectron spectroscopy

Free-standing Ni3(HITP)2 membrane · Thin Film

Thermo Scientific ESCALAB 250 Xi XPS; baseline correction by Avantage; apparent charging normalised to C 1s = 284.8 eV.

Context
top surface of pristine Ni3(HITP)2 membrane close to the gate dielectric
Measurement source
SI p.S3 and S8 · Methods; Additional Figures · Figure S7
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Ni-species impurity assessmentNi metal, NiO and Ni(OH)2 impurities ruled out in the thin layer close to SiO2——Text
Qualitative		main p.2 / article p.1361 · Results and discussion · Figures S6,S7
Ni 2p3/2 binding energy in Ni3(HITP)2 top surface855.5 eV——Text
Exact Reported		main p.2 / article p.1361 · Results and discussion · Figure S7