Electrical Transport — Chemical Vapor Deposition and High-Resolution Patterning of a Highly Conductive Two-Dimensional Coordination Polymer Film

5 measurement groups · 21 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

85 nm CVD Cu-BHT nanofilm · Thin Film

85 nm CVD Cu-BHT film measured from 2 to 320 K; ln sigma analysed versus 1000/T and T^-1/4.

Temperature: 2-320
Geometry: van der Pauw thin-film geometry
Context: pristine Cu-BHT film with contacts
Measurement source: main p.5 / article p.E · Results and Discussion · Figure 4b; Figures S18-S19

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
High-temperature activation energy	0.8 meV at high (300 K) temperature region	0.0008 eV	—	Text Rounded Reported	main p.5 / article p.E · Results and Discussion · Figure S18
Low-temperature activation energy	0.4 meV at low (40 K) temperature region	0.0004 eV	—	Text Rounded Reported	main p.5 / article p.E · Results and Discussion · Figure S18
Maximum temperature in resistance measurement	320 K	—	—	Text Rounded Reported	main p.5 / article p.E · Results and Discussion · Figure 4b
Minimum temperature in resistance measurement	2 K	—	—	Text Rounded Reported	main p.5 / article p.E · Results and Discussion · Figure 4b
Mott 3D variable range hopping fit	ln sigma follows a T^-1/4 dependence	—	—	Text Qualitative	main p.5 / article p.E · Results and Discussion · Figure S19
Upper bound of Mott 3D VRH fit regime	220 K	—	—	Text Rounded Reported	main p.5 / article p.E · Results and Discussion · Figure S19
Lower bound of Mott 3D VRH fit regime	80 K	—	—	Text Rounded Reported	main p.5 / article p.E · Results and Discussion · Figure S19

CVD Cu-BHT top-gated FET · Electrode

Keysight B1500 semiconductor analyser; ionic-liquid-gated Cu-BHT FET.

Geometry: top-gated FET with Au source/drain and ionic liquid gate
Context: Cu-BHT device stack
Measurement source: SI p.S7 and p.S19 · Fabrication and characterization of field-effect transistors (FETs) · Figure S22

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Top-gated FET field-effect response	no clear field effect; metallic behaviour suggested	—	—	Text Qualitative	main p.5 / article p.E · Results and Discussion · Figure S22

CVD Cu-BHT Hall bar microdevice with Au electrodes · Electrode

Tensormeter device at atmospheric pressure; DC current 50 uA; magnetic sweeps -1.5 to 1.5 T; 10 cycles per temperature; measured 303-333 K.

Temperature: 303-333
Atmosphere: atmospheric pressure
Geometry: Hall bar: t = 80 nm, w = 10 um, l = 50 um
Context: Cu-BHT Hall-bar device with Au electrodes
Measurement source: SI p.S6 · Hall effect measurements · Figure 4d; Figure S21

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Hall measurement bias current	50 uA	0.00005 A	—	Text Exact Reported	SI p.S6 · Hall effect measurements
Hall charge carrier density at 30 deg CMarked as a best value within this paper	4.4 x 10^19 cm-3	4.4e+25 m-3	—	Text Exact Reported	main p.5 / article p.E · Results and Discussion · Figure 4d
Hall magnetic-field sweep upper bound	1.5 T	—	—	Text Exact Reported	SI p.S6 · Hall effect measurements
Hall magnetic-field sweep lower bound	-1.5 T	—	—	Text Exact Reported	SI p.S6 · Hall effect measurements
Hall charge mobility at 30 deg CMarked as a best value within this paper	4.65 cm2/V s	0.000465 m2/V/s	—	Text Exact Reported	main p.5 / article p.E · Results and Discussion · Figure 4d
Hall carrier type	n-type behaviour at room temperature	—	—	Text Qualitative	main p.5 / article p.E · Results and Discussion · Figure S21
Hall value reporting temperature	30 deg C	303.15 K	—	Text Rounded Reported	main p.5 / article p.E · Results and Discussion · Figure 4d

20 nm CVD Cu-BHT nanofilm · Thin Film

I-V curve measured at 300 K to check Ohmic contacts.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
20 nm CVD Cu-BHT I-V behaviour	linear I-V curve at 300 K	—	—	Caption Qualitative	SI p.S17 · Results and Discussion · Figure S17

CVD Cu-BHT nanofilm series · Thin Film

Lakeshore Hall System 9700A; Ag paste and silver wires on Cu-BHT film on Si/SiO2; contacts confirmed Ohmic by I-V curves.

Temperature: 300 for conductivity values; 2-320 K for temperature dependence
Geometry: van der Pauw thin-film geometry
Context: pristine Cu-BHT films with contacts
Measurement source: SI p.S6 and main p.E · Variable-temperature van der Paw conductivity measurements; Results and Discussion · Figure 4a-b; Figure S17

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Electrical conductivity of 20 nm CVD Cu-BHT at 300 K	342 S/cm	34200 S/m	—	Text Rounded Reported	main p.5 / article p.E · Results and Discussion · Figure 4a; Figure S17
Electrical conductivity of 85 nm CVD Cu-BHT at 300 KMarked as a best value within this paper	634 S/cm	63400 S/m	—	Text Rounded Reported	main p.5 / article p.E · Results and Discussion · Figure 4a
85 nm CVD Cu-BHT I-V behaviour	linear current-voltage curves ensure Ohmic contacts	—	—	Text Qualitative	main p.5 / article p.E · Results and Discussion · Figure 4a
Approximate resistivity of 85 nm CVD Cu-BHT near 300 K	about 6.8 x 10^-3 ohm cm from Figure 4b	0.0068 ohm cm	visual estimate, about +/-0.2 x 10^-3 ohm cm	Visual Estimate Approximate	main p.4 / article p.D · Figure 4 · Figure 4b
Approximate resistivity of 85 nm CVD Cu-BHT near 2 K	about 10.3 x 10^-3 ohm cm from Figure 4b	0.0103 ohm cm	visual estimate, about +/-0.4 x 10^-3 ohm cm	Visual Estimate Approximate	main p.4 / article p.D · Figure 4 · Figure 4b