Rubio-Gimenez V., Arnauts G., Wang M. et al. · Journal of the American Chemical Society · 2023 · 152-159
Open a family to keep every result attached to its sample, method and conditions.
Paraphrased for this database from the authors’ stated interpretations — never quoted verbatim — and kept separate from reported measurements.
Solvent-free CVD converts CuO precursor layers into homogeneous, smooth, crystalline Cu-BHT nanofilms with controllable 20-85 nm thickness.
Caveat: A much thicker 40 nm CuO precursor showed residual CuO by GIXRD.
main p.1-p.3 / article p.A-C · Abstract; Results and Discussion · Figures 1-2; Figure S9 · Linked to 6 structured results
Bottom-up additive lithography combined with CVD patterns Cu-BHT with sub-micrometre gaps and about 1 um circular features while preserving crystallinity.
Caveat: Detailed feature performance is morphology/crystallinity based; electrical testing was performed on larger Hall-bar structures.
main p.5 / article p.E · Results and Discussion · Figure 3; Figure S14 · Linked to 3 structured results
Top-down Ar plasma etching damages Cu-BHT pattern edges and leaves residual Cu-BHT between lines, making lift-off patterning preferable in this comparison.
Caveat: Specific to the reported plasma etching conditions.
main p.5 / article p.E · Results and Discussion · Figures S15-S16 · Linked to 2 structured results
CVD Cu-BHT crystallites are preferentially oriented with their 2D ab planes parallel to the substrate.
main p.2 / article p.B · Results and Discussion · Figure 2e · Linked to 2 structured results
Cu-BHT formation during vapour-solid conversion involves reduction of Cu(II) in CuO to Cu(I), likely coupled to oxidation of thiol groups and Cu-thiolate bond formation.
Caveat: Mechanistic sequence is stated as a hypothesis based on prior thiolate studies.
main p.3 / article p.C · Results and Discussion · Figure 2f; Figure S12 · Linked to 4 structured results
Top-gated CVD Cu-BHT FETs show no clear field effect, which the authors interpret as consistent with metallic behaviour.
Caveat: Qualitative FET conclusion; the authors caution that nonideal FET characteristics can overestimate field-effect mobilities.
main p.5 / article p.E · Results and Discussion · Figure S22 · Linked to 1 structured result
Hall-bar measurements indicate n-type Cu-BHT transport with 4.65 cm2/V/s Hall mobility and 4.4 x 10^19 cm-3 carrier density at 30 deg C.
Caveat: Hall resistance absolute values are affected by sheet resistance, but the SI states the slope remains usable for calculating Hall mobility.
main p.5 / article p.E · Results and Discussion · Figure 4d; Figure S21 · Linked to 3 structured results
CVD Cu-BHT nanofilms retain high room-temperature conductivity, reaching 634 S/cm for an 85 nm film and 342 S/cm for a 20 nm film.
Caveat: Conductivity values are reported for contacted films; detailed uncertainties are not provided.
main p.5 / article p.E · Results and Discussion · Figure 4a; Figure S17 · Linked to 3 structured results
The 85 nm CVD Cu-BHT film shows only a slow resistance increase on cooling and can be described by very small Arrhenius activation energies plus a Mott 3D variable-range hopping fit over 80-220 K.
Caveat: The main text notes nonlinear ln sigma versus reciprocal temperature, so Arrhenius fits are local-regime descriptions.
main p.5 / article p.E · Results and Discussion · Figures S18-S19 · Linked to 5 structured results
Names and aliases are kept exactly within the paper’s own identity model.
| Material | Composition | Structure context | Source |
|---|---|---|---|
| Cu-BHT / copper benzenehexanothiolate coordination polymerBrowse family: Cu₃(C₆S₆) / Cu–BHT | [Cu3(C6S6)]nCu(I) ions in Cu-thiolate coordination within a Kagome-type planar lattice. · Benzenehexanothiolate (BHT) linker generated from H6BHT. | 2D · PristineKagome-type planar lattice; eclipsed AA vertical stacking in the main schematic; crystalline CVD films assigned to AA stacking, monoclinic C2, preferentially oriented with 2D ab planes parallel to the substrate. | main p.1-p.3 / article p.A-C · Abstract; Results and Discussion · Figure 1; Figure 2e |
| CuO precursor layer | CuOCu(II) oxide precursor. · None | 3D · Model SystemRF-sputtered oxide precursor film, not a conductive MOF. | SI p.S4 and p.S14 · CuO deposition; Figure S12 · Figure S5; Figure S12 |
| H6BHT linker precursor | H6BHTNone · Benzenehexathiol / H6BHT molecular linker precursor. | 0D · Model SystemMolecular precursor, not a framework. | main p.2 / article p.B · Results and Discussion · Figure 1d; Figures S1-S2 |
Sample form, processing state and composition status define the context for measurements.
| Sample | Form and role | Processing and geometry | Source |
|---|---|---|---|
| 20 nm CVD Cu-BHT nanofilmresearch_0034__mat__cu_bht | Thin Film · Target Sample · Pristine Framework | Thin member of the CVD film series.Substrate varies by measurement; CVD film examples include Si and glass. · ca. 20 nm final Cu-BHT film thickness. | main p.3 / article p.C · Results and Discussion · Figure 2b-c,e |
| 40 nm CVD Cu-BHT nanofilmresearch_0034__mat__cu_bht | Thin Film · Target Sample · Pristine Framework | Intermediate member of the CVD film series.Not separately specified. · ca. 40 nm final Cu-BHT film thickness. | SI p.S11 and p.S14 · Results and Discussion · Figure S7; Table S1 |
| 80 nm CVD Cu-BHT nanofilmresearch_0034__mat__cu_bht | Thin Film · Target Sample · Pristine Framework | Thick member of the CVD film series.Glass for photograph/optical examples; Si substrate for HAXPES survey according to main text context. · ca. 80 nm final Cu-BHT film thickness. | main p.3 / article p.C · Results and Discussion · Figure 2a; Figure S10; Table S1 |
| 85 nm CVD Cu-BHT nanofilmresearch_0034__mat__cu_bht | Thin Film · Target Sample · Pristine Framework | Thick film used for high-conductivity and variable-temperature resistance measurements.Si/SiO2 for variable-temperature van der Pauw conductivity according to SI method. · 85 nm final Cu-BHT film thickness. | main p.4-p.5 / article p.D-E · Results and Discussion · Figure 4a-b |
| CVD Cu-BHT nanofilm seriesresearch_0034__mat__cu_bht | Thin Film · Target Sample · Pristine Framework | CuO layer converted to Cu-BHT by exposure to H6BHT vapour under dynamic vacuum in a multizone CVD furnace.Si, Si/SiO2 wafer or glass substrates converted from sputtered CuO precursor layers. · Final Cu-BHT film thickness controllable over 20-85 nm, with ca. 7x expansion relative to CuO thickness. | main p.1-p.3 / article p.A-C · Abstract; Results and Discussion · Figures 1e and 2a-d |
| CVD Cu-BHT Hall bar microdevice with Au electrodesresearch_0034__mat__cu_bht | Electrode · Target Sample · Composite | Hall bar microdevice fabricated by additive lithography and contacted with Cu wires/silver paste for Hall measurement.Si/SiO2 substrate with 300 nm dry thermal silicon oxide; device image labels SiO2 and Au. · Nominal Hall calculation thickness t = 80 nm; Hall arm width w = 10 um; longitudinal distance l = 50 um. | SI p.S6 · Hall effect measurements · Figure 4c-d; Figure S21 |
| Bottom-up lift-off patterned CVD Cu-BHT featuresresearch_0034__mat__cu_bht | Thin Film · Target Sample · Pristine Framework | Photoresist lift-off patterning of CuO precursor followed by Cu-BHT conversion; includes interdigitated electrodes, circles and lines.Si substrates and Si/SiO2 substrates for electrode/Hall-bar patterning. · Not specified for all patterned features. | main p.4-p.5 / article p.D-E · Results and Discussion · Figure 3; Figures S13-S14 |
| Top-down Ar plasma etched Cu-BHT line patternsresearch_0034__mat__cu_bht | Thin Film · Target Sample · Pristine Framework | Cu-BHT thin films patterned by photoresist and Ar reactive ion etching.Not separately specified. · Not specified. | SI p.S16 · Results and Discussion · Figures S15-S16 |
| Solvent-free Cu-BHT powder productresearch_0034__mat__cu_bht | Powder · Target Sample · Pristine Framework | CuO nanoparticles and H6BHT sealed under dynamic vacuum and heated at 150 deg C for 12 h; washed with chloroform and dried under nitrogen. | SI p.S4 · Solvent-free Cu-BHT powder synthesis · Figures S3-S4 |
| Solution-made Cu-BHT referenceresearch_0034__mat__cu_bht | Thin Film · Pristine Control · Pristine Framework | Liquid-liquid interfacial synthesis following a previously reported procedure. | SI p.S4 · Liquid-liquid interfacial synthesis of the Cu-BHT reference · Figure 2f; Table S1 |
| CVD Cu-BHT top-gated FETresearch_0034__mat__cu_bht | Electrode · Target Sample · Composite | Au source/drain electrodes evaporated onto Si/SiO2/Cu-BHT; ionic liquid gate drop-cast over film and electrodes.Si/SiO2/Cu-BHT film. · Not specified. | SI p.S6-S7 · Fabrication and characterization of field-effect transistors (FETs) · Figure S22 |
| RF-sputtered CuO precursor filmsresearch_0034__mat__cuo_precursor | Thin Film · Model System · Model | Deposited by RF sputtering under Ar before conversion into Cu-BHT.Si, Si/SiO2 or glass substrates. · CuO precursor films with varied thickness, including ca. 3.09 nm and 11.37 nm examples in Figure S5. | SI p.S4 and p.S10 · CuO deposition · Figure S5 |
| H6BHT linker powderresearch_0034__mat__h6bht_linker | Powder · Model System · Model | Synthesized following previously reported procedures and used as vapour-source linker in CVD. | SI p.S4 · Materials and reagents |