Electrical Transport — High charge mobility in a tetrathiafulvalene-based microporous metal-organic framework

4 measurement groups · 8 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

FP-TRMC on H4TTFTB/PMMA control film

H4TTFTB/PMMA control film for FP-TRMC and TOF · Thin Film

Same general FP-TRMC conditions as MOF film; H4TTFTB/PMMA 40/60 wt% control film excited at 355 nm.

Temperature: 298
Atmosphere: Ambient.
Geometry: Non-contact TRMC film measurement.
Context: Molecular ligand/PMMA control film, not a MOF.
Measurement source: main p.3 / article p.12934 · FP-TRMC discussion · Figure 3a

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
*Maximum photoconductivity mobility product phisum(mu) for H4TTFTB control**	9 x 10^-6 cm2/V s	0.000009 cm2/V/s	—	Text Rounded Reported	main p.3 / article p.12934 · FP-TRMC discussion · Figure 3a
*Approximate H4TTFTB control charge mobility calculated from reported phisum(mu) and SI phi**	9 x 10^-6 / 4.3 x 10^-3 = ca. 0.0021 cm2/V s	0.0021 cm2/V/s	approximate because input values are rounded	Calculated From Reported Approximate	main p.3 / article p.12934 · Mobility comparison · Figure 3

Flash photolysis-time-resolved microwave conductivity (FP-TRMC)

Electrical conductivity

Compound 1/PMMA blend film for FP-TRMC · Thin Film

25 deg C, ambient conditions, 40/60 wt% MOF/PMMA film; microwave power 3 mW, ~9.1 GHz; 355 nm Nd:YAG third-harmonic pulses; excitation density SI 6.4 x 10^15 cm^-2 photons per pulse; main figure caption 6.5 x 10^15 cm^-2.

Temperature: 298
Atmosphere: Ambient.
Geometry: Non-contact TRMC film measurement.
Context: Composite PMMA film used to probe intrinsic target MOF mobility on multinanometer length scales.
Measurement source: SI p.S2 · FP-TRMC measurements · Figure 3a

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Comparison field-effect mobility for poly(3-hexylthiophene)	approximately 0.1 cm2/V s	0.1 cm2/V/s	approximately	Text Approximate	main p.3 / article p.12934 · Mobility comparison
Comparison field-effect mobility for poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene)	0.2-0.6 cm2/V s	0.2 cm2/V/s	range lower bound 0.2, upper bound 0.6 cm2/V s	Text Range	main p.3 / article p.12934 · Mobility comparison
*Maximum photoconductivity mobility product phisum(mu) for compound 1**	3 x 10^-5 cm2/V s	0.00003 cm2/V/s	—	Text Rounded Reported	main p.3 / article p.12934 · FP-TRMC discussion · Figure 3a
Intrinsic charge mobility of compound 1Marked as a best value within this paper	0.2 cm2/V s	0.2 cm2/V/s	—	Text Rounded Reported	main p.3 / article p.12934 · FP-TRMC/TOF mobility discussion · Figure 3

TOF transient current integration on H4TTFTB/PMMA control film

H4TTFTB/PMMA control film for FP-TRMC and TOF · Thin Film

10 kohm terminate resistance; 355 nm pulse; H4TTFTB/PMMA 9-12 um film between Al and Au electrodes on silicon.

Atmosphere: Not reported.
Geometry: Au/Al electrode sandwich; 9-12 um control blend film.
Context: Molecular ligand/PMMA control film, not a MOF.
Measurement source: SI p.S2 · TOF transient current integration · Figure 3b

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Charge-carrier generation quantum yield phi for H4TTFTB controlMarked as a best value within this paper	4.3 x 10^-3 (SI); main text rounds to 4 x 10^-3	—	—	Text Rounded Reported	SI p.S2 · TOF transient current integration · Figure 3b

Time-of-flight transient current integration

Compound 1/PMMA TOF transient-current device film · Thin Film

10 kohm terminate resistance; fixed bias voltage; 355 nm pulse laser, SI power 8.3 x 10^15 photons cm^-2; compound 1/PMMA 5-7 um film between Al (70 nm) and Au (30 nm) electrodes on silicon.

Atmosphere: Not reported; related FP-TRMC conducted under ambient conditions.
Geometry: Au-semitransparent/Al electrode sandwich, applied bias in main caption 1.2-1.5 x 10^4 V/cm.
Context: Composite PMMA device film used to estimate phi for target MOF mobility calculation.
Measurement source: SI p.S2 · TOF transient current integration · Figure 3b

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Charge-carrier generation quantum yield phi for compound 1Marked as a best value within this paper	1.6 x 10^-4 (SI); main text rounds to 2 x 10^-4	—	—	Text Rounded Reported	SI p.S2 · TOF transient current integration · Figure 3b