Primary studyCore evidenceTransport Physics

Ligand-Mediated Hydrogenic Defects in Two-Dimensional Electrically Conductive Metal-Organic Frameworks

Debela T.T., Yang M.C., Hendon C.H. · Journal of the American Chemical Society · 2023 · 11387-11391

4materials
10samples
0synthesis routes
11measurements
30results
6claims and caveats

Evidence map

Open a family to keep every result attached to its sample, method and conditions.

Author interpretations and caveats

Paraphrased for this database from the authors’ stated interpretations — never quoted verbatim — and kept separate from reported measurements.

Application RelevanceSupport assessment: Medium

Different computed NH and NH2 stretching frequencies suggest vibrational spectroscopy could help detect hydrogenic defects.

Caveat: The paper proposes the signature computationally; no IR measurement is reported.

main p.4 / article p.11390 · Results and Discussion · Tables S1-S2 · Linked to 3 structured results

Phase AssignmentSupport assessment: Medium

For 2H* interstitials, many configurations are energetically competitive, so adatomic protons are not expected to be crystallographically ordered.

Caveat: Only several configurations were sampled out of the 36 possible configurations.

main p.3 / article p.11389 · Results and Discussion · Figures S4-S5 · Linked to 4 structured results

Structure Property LinkSupport assessment: High

Adatomic hydrogen in vdW-stacked Ni3(HITP)2H2 opens a discrete electronic gap in both in-plane and out-of-plane crystallographic directions.

Caveat: Bulk calculation uses a stoichiometric H*-reduced model, not an experimentally characterised sample.

main p.4 / article p.11390 · Results and Discussion · Figure 5d · Linked to 1 structured result

Structure Property LinkSupport assessment: High

Interstitial hydrogen in both HIB- and HITP-based conductive MOF models is thermodynamically favourable, with neutral or double-neutral interstitials especially favourable.

Caveat: Formation energies depend on assumed hydrogen chemical potential and computed defect charge/configuration.

main p.1 / article p.11387 · Abstract · Linked to 4 structured results

Transport MechanismSupport assessment: Medium

Hydrogenic defects provide an alternate explanation for activated transport signatures in Ni3(HIB)2 by opening band gaps for H+, H-, H*, and 2H* interstitial configurations.

Caveat: The link to experimental activated transport is interpretive; the paper does not measure transport on defective Ni3(HIB)2.

main p.3 / article p.11389 · Results and Discussion · Figure S4 · Linked to 4 structured results

Transport MechanismSupport assessment: High

Interstitial hydrogen is predicted to render Ni3(HITP)2 and Ni3(HIB)2 bulk semiconductors rather than metals.

Caveat: Computational prediction only; no experimental synthesis or transport data are reported in this paper.

main p.1 / article p.11387 · Abstract · Linked to 3 structured results

Material identities

Names and aliases are kept exactly within the paper’s own identity model.

MaterialCompositionStructure contextSource
Ni3(HIB)2 conductive 2D metal-organic frameworkNi3(HIB)2Nickel nodes in a charge-neutral 2D kagome lattice. · HIB = hexaiminobenzene, modelled as deprotonated/oxidised HIB3- linkers.2D · Model SystemCharge-neutral kagome lattice; predicted monolayer through-bond metal and out-of-plane semiconductor in vdW stacking.main p.2 / article p.11388 · Introduction · Figure 1
Hydrogen-defective Ni3(HIB)2 model systemsNi3(HIB)2Hx, x = vacancy/interstitial modelNickel nodes retained from the Ni3(HIB)2 kagome framework. · HIB linkers with hydrogen vacancy, H+, H-, H* or 2H* interstitial configurations.2D · Model SystemHydrogenic defect models in charge states q = -1, 0, +1; 2H* interstitial model forms Ni3(HIB)2H2.main p.2 / article p.11388 · Results and Discussion · Figure 3
Ni3(HITP)2 conductive 2D metal-organic frameworkBrowse family: Ni₃(HITP)₂ / Ni–HITPNi3(HITP)2Nickel nodes in a charge-neutral 2D kagome lattice. · HITP = 2,3,6,7,10,11-hexaiminotriphenylene, modelled as deprotonated/oxidised HITP3- linkers.2D · Model SystemCharge-neutral kagome lattice; predicted bulk through-space pi-stacking metal and in-plane semiconductor before hydrogenic defects.main p.2 / article p.11388 · Introduction · Figure 1
Hydrogen-defective Ni3(HITP)2 model systemsBrowse family: Ni₃(HITP)₂ / Ni–HITPNi3(HITP)2Hx, x = vacancy/interstitial modelNickel nodes retained from the Ni3(HITP)2 kagome framework. · HITP linkers with hydrogen vacancy, H+, H-, H* or 2H* interstitial configurations.2D · Model SystemHydrogenic defect models in monolayer and vdW-stacked bulk Ni3(HITP)2; 2H* interstitial model forms Ni3(HITP)2H2.main p.3 / article p.11389 · Results and Discussion · Figure 5

Sample register

Sample form, processing state and composition status define the context for measurements.

Show 10 sample records
SampleForm and roleProcessing and geometrySource
Ni3(HIB)2H2 double neutral interstitial-hydrogen modelsresearch_0044__mat__ni3_hib2_h_defectiveModel · Model System · ModelTwo neutral interstitial hydrogens (2H*) introduced to two linkers; multiple configurations sampled.Monolayer model.main p.3 / article p.11389 · Results and Discussion · Figure 3c and Figure S4
Ni3(HIB)2H single interstitial-hydrogen modelsresearch_0044__mat__ni3_hib2_h_defectiveModel · Model System · ModelInterstitial hydrogen considered as H+, H-, and neutral radical H* in Ni3(HIB)2H.Monolayer model.SI p.6 · Figure S4 caption · Figure S4
Ni3(HIB)2 hydrogen-vacancy modelresearch_0044__mat__ni3_hib2_h_defectiveModel · Model System · ModelHydrogen vacancy (VH) considered in charge states q = -1, 0, +1 under H-rich and H-poor chemical potentials.Monolayer model.main p.2 / article p.11388 · Results and Discussion · Figure 3a
Pristine monolayer Ni3(HIB)2 computational modelresearch_0044__mat__ni3_hib2Model · Model System · ModelPeriodic DFT monolayer model, no hydrogenic defect.Single monolayer with 20 A vacuum along z direction in SI calculations.SI p.1 · Computational Details
vdW-stacked bulk Ni3(HITP)2H2 H*-reduced computational modelresearch_0044__mat__ni3_hitp2_h_defectiveModel · Model System · ModelStoichiometric H*-reduced MOF with adatomic H* per linker.Bulk vdW stacked crystal model.main p.4 / article p.11390 · Results and Discussion · Figure 5d
Pristine vdW-stacked bulk Ni3(HITP)2 computational modelresearch_0044__mat__ni3_hitp2Model · Model System · ModelPristine stacked model used as comparison for H*-reduced bulk calculation.Bulk vdW stacked crystal model.main p.4 / article p.11390 · Results and Discussion · Figure 5d
Ni3(HITP)2H2 double neutral interstitial-hydrogen modelsresearch_0044__mat__ni3_hitp2_h_defectiveModel · Model System · ModelTwo neutral interstitial hydrogens (2H*) introduced to HITP linkers; multiple configurations sampled.Monolayer model.main p.3 / article p.11389 · Results and Discussion · Figure 5c and Figure S5
Ni3(HITP)2H single interstitial-hydrogen modelsresearch_0044__mat__ni3_hitp2_h_defectiveModel · Model System · ModelInterstitial hydrogen considered as H+, H-, and neutral radical H* in Ni3(HITP)2H.Monolayer model.SI p.7 · Figure S5 caption · Figure S5
Ni3(HITP)2 hydrogen-vacancy modelresearch_0044__mat__ni3_hitp2_h_defectiveModel · Model System · ModelHydrogen vacancy (VH) considered under H-rich and H-poor chemical potentials.Monolayer model.main p.3 / article p.11389 · Results and Discussion · Figure 5a,b
Pristine monolayer Ni3(HITP)2 computational modelresearch_0044__mat__ni3_hitp2Model · Model System · ModelPeriodic DFT monolayer model, no hydrogenic defect.Single monolayer with 20 A vacuum along z direction in SI calculations.main p.2 / article p.11388 · Results and Discussion · Figure 2a