DFT band structure, PDOS, charge density and effective-mass calculation
Ideal Cu3(TABTO)2 AA' model · Model
Electronic properties analysed for magnetic ground state with maximised antiferromagnetic coupling.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| Ideal Cu3(TABTO)2 direct band gap | 0.30 eV at the gamma point | — | — | Text Exact Reported | 18348 · Results and Discussion · Figure 2a |
| CBM in-plane band dispersion | 0.11 eV | — | — | Text Exact Reported | 18349 · Results and Discussion · Figure 2a |
| Minimum CBM carrier effective mass | 1.83 me | — | — | Text Exact Reported | 18349 · Results and Discussion · Figure 2a |
| Minimum CBM carrier effective mass (SI) | 1.82 me near Gamma-M segment | — | — | Text Exact Reported | S9 · Density functional theory calculations |
| VBM in-plane dispersion | 0.03 eV | — | — | Text Exact Reported | 18349 · Results and Discussion · Figure 2a |
| VBM in-plane carrier effective mass | 6.87 me | — | — | Text Exact Reported | 18349 · Results and Discussion · Figure 2a |
| VBM out-of-plane dispersion | 0.69 eV | — | — | Text Exact Reported | 18349 · Results and Discussion · Figure 2a |
| Minimum VBM perpendicular carrier effective massMarked as a best value within this paper | 0.90 me | — | — | Text Exact Reported | 18349 · Results and Discussion · Figure 2a |