cMOF Evidence Base
Electrical Transport — Two isostructural linear coordination polymers: The size of the metal ion impacts the electrical conductivity

Measurement evidence

Electrical Transport

Two isostructural linear coordination polymers: The size of the metal ion impacts the electrical conductivity · Dutta B., Dey A., Naskar K. et al. · New Journal of Chemistry · 2018 · 10309-10316

6 measurement groups · 54 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

dielectric impedance/capacitance/phase angle; Agilent 4295A LCR

compound 2 polished pellet with silver-paste electrodes · Pellet

Frequency range 40 Hz-11 MHz; polished pellet with silver-paste electrodes.

Temperature
room temperature
Atmosphere
ambient
Geometry
pellet with silver-paste electrodes on opposite surfaces
Context
pristine CP pellet
Measurement source
4 · Dielectric characterization · Figs. 4-5; Table 1
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
dielectric constant/permittivity as reported1.16 x 10^-1 F m^-1——Table
Exact Reported		4 · Dielectric characterization · Table 1
DC conductivity from dielectric/AC conductivityMarked as a best value within this paper4.60 x 10^-5 S m^-1——Table
Exact Reported		4 · Dielectric characterization · Table 1
electron lifetime from Bode plot0.383 x 10^-7 s——Table
Exact Reported		4 · Dielectric characterization · Table 1
charge transfer resistanceMarked as a best value within this paper3.005 kOhm——Table
Exact Reported		4 · Dielectric characterization · Table 1

two-probe current-voltage characteristics; Keithley 2635B source meter; thermionic emission/Cheung analysis

Electrical conductivity

ITO/compound 2/Al thin-film Schottky device · Electrode

Dark and AM 1.5G illumination; room temperature and ambient conditions.

Temperature
room temperature
Atmosphere
ambient
Geometry
ITO/compound 2/Al sandwich; effective area 7.065 x 10^-2 cm2; film thickness approx. 1 micrometre
Context
pristine CP thin-film MS junction
Measurement source
5 · Electrical characterization · Figs. 6-7; Table 2
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
barrier height dark0.41 eV——Table
Exact Reported		6 · Electrical characterization · Table 2
thin-film device conductivity dark6.54 x 10^-4 S m^-1——Table
Exact Reported		5 · Electrical characterization · Table 2
ideality factor dark2.39——Table
Exact Reported		6 · Electrical characterization · Table 2
on/off ratio dark43——Table
Exact Reported		6 · Electrical characterization · Table 2
series resistance from dV/dlnI dark426.86 Ohm——Table
Exact Reported		6 · Electrical characterization · Table 2
series resistance from H dark441.79 Ohm——Table
Exact Reported		6 · Electrical characterization · Table 2
barrier height light0.33 eV——Table
Exact Reported		6 · Electrical characterization · Table 2
thin-film device conductivity lightMarked as a best value within this paper28.77 x 10^-4 S m^-1——Table
Exact Reported		5 · Electrical characterization · Table 2
ideality factor lightMarked as a best value within this paper1.38——Table
Exact Reported		6 · Electrical characterization · Table 2
on/off ratio lightMarked as a best value within this paper89——Table
Exact Reported		6 · Electrical characterization · Table 2
series resistance from dV/dlnI lightMarked as a best value within this paper222.34 Ohm——Table
Exact Reported		6 · Electrical characterization · Table 2
series resistance from H lightMarked as a best value within this paper231.03 Ohm——Table
Exact Reported		6 · Electrical characterization · Table 2
photosensitivityMarked as a best value within this paper3.5——Table
Exact Reported		6 · Electrical characterization · Table 2

space-charge-limited-current analysis; Mott-Gurney equation; Einstein-Smoluchowski relation

Space-charge-limited current analysis

ITO/compound 2/Al thin-film Schottky device · Electrode

Forward I-V curve analysed as log I vs log V and I vs V2; dark and light conditions.

Temperature
room temperature
Atmosphere
ambient
Geometry
ITO/compound 2/Al sandwich; film thickness considered approx. 1 micrometre
Context
pristine CP thin-film MS junction
Measurement source
6 · Electrical characterization/SCLC analysis · Fig. 8; Table 3
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
diffusion coefficient dark6.57 x 10^-10——Table
Exact Reported		6 · SCLC analysis · Table 3
diffusion length dark1.296 x 10^-7 m——Table
Exact Reported		6 · SCLC analysis · Table 3
effective carrier mobility dark26.31 x 10^-9 m2 V^-1 s^-1——Table
Exact Reported		6 · SCLC analysis · Table 3
mobility-lifetime product dark3.36 x 10^-13——Table
Exact Reported		6 · SCLC analysis · Table 3
transit time dark1.28 x 10^-5 s——Table
Exact Reported		6 · SCLC analysis · Table 3
diffusion coefficient lightMarked as a best value within this paper17.24 x 10^-10——Table
Exact Reported		6 · SCLC analysis · Table 3
diffusion length lightMarked as a best value within this paper1.477 x 10^-7 m——Table
Exact Reported		6 · SCLC analysis · Table 3
effective carrier mobility lightMarked as a best value within this paper68.98 x 10^-9 m2 V^-1 s^-1——Table
Exact Reported		6 · SCLC analysis · Table 3
mobility-lifetime product lightMarked as a best value within this paper4.36 x 10^-13——Table
Exact Reported		6 · SCLC analysis · Table 3
transit time lightMarked as a best value within this paper6.33 x 10^-6 s——Table
Exact Reported		6 · SCLC analysis · Table 3

dielectric impedance/capacitance/phase angle; Agilent 4295A LCR

compound 1 polished pellet with silver-paste electrodes · Pellet

Frequency range 40 Hz-11 MHz; polished pellet with silver-paste electrodes.

Temperature
room temperature
Atmosphere
ambient
Geometry
pellet with silver-paste electrodes on opposite surfaces
Context
pristine CP pellet
Measurement source
4 · Dielectric characterization · Figs. 4-5; Table 1
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
dielectric constant/permittivity as reported1.95 x 10^-1 F m^-1——Table
Exact Reported		4 · Dielectric characterization · Table 1
DC conductivity from dielectric/AC conductivity2.62 x 10^-5 S m^-1——Table
Exact Reported		4 · Dielectric characterization · Table 1
electron lifetime from Bode plot1.06 x 10^-7 s——Table
Exact Reported		4 · Dielectric characterization · Table 1
charge transfer resistance5.44 kOhm——Table
Exact Reported		4 · Dielectric characterization · Table 1

two-probe current-voltage characteristics; Keithley 2635B source meter; thermionic emission/Cheung analysis

Electrical conductivity

ITO/compound 1/Al thin-film Schottky device · Electrode

Dark and AM 1.5G illumination; room temperature and ambient conditions.

Temperature
room temperature
Atmosphere
ambient
Geometry
ITO/compound 1/Al sandwich; effective area 7.065 x 10^-2 cm2; film thickness approx. 1 micrometre
Context
pristine CP thin-film MS junction
Measurement source
5 · Electrical characterization · Figs. 6-7; Table 2
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
barrier height dark0.43 eV——Table
Exact Reported		6 · Electrical characterization · Table 2
thin-film device conductivity dark5.12 x 10^-4 S m^-1——Table
Exact Reported		5 · Electrical characterization · Table 2
ideality factor dark2.89——Table
Exact Reported		6 · Electrical characterization · Table 2
on/off ratio dark41——Table
Exact Reported		6 · Electrical characterization · Table 2
series resistance from dV/dlnI dark495.45 Ohm——Table
Exact Reported		6 · Electrical characterization · Table 2
series resistance from H dark513.61 Ohm——Table
Exact Reported		6 · Electrical characterization · Table 2
barrier height light0.39 eV——Table
Exact Reported		6 · Electrical characterization · Table 2
thin-film device conductivity light16.48 x 10^-4 S m^-1——Table
Exact Reported		5 · Electrical characterization · Table 2
ideality factor light2.08——Table
Exact Reported		6 · Electrical characterization · Table 2
on/off ratio light77——Table
Exact Reported		6 · Electrical characterization · Table 2
series resistance from dV/dlnI light373.41 Ohm——Table
Exact Reported		6 · Electrical characterization · Table 2
series resistance from H light388.42 Ohm——Table
Exact Reported		6 · Electrical characterization · Table 2
photosensitivity1.96-2——Table
Range		6 · Electrical characterization · Table 2

space-charge-limited-current analysis; Mott-Gurney equation; Einstein-Smoluchowski relation

Space-charge-limited current analysis

ITO/compound 1/Al thin-film Schottky device · Electrode

Forward I-V curve analysed as log I vs log V and I vs V2; dark and light conditions.

Temperature
room temperature
Atmosphere
ambient
Geometry
ITO/compound 1/Al sandwich; film thickness considered approx. 1 micrometre
Context
pristine CP thin-film MS junction
Measurement source
6 · Electrical characterization/SCLC analysis · Fig. 8; Table 3
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
diffusion coefficient dark2.14 x 10^-10——Table
Exact Reported		6 · SCLC analysis · Table 3
diffusion length dark1.278 x 10^-7 m——Table
Exact Reported		6 · SCLC analysis · Table 3
effective carrier mobility dark8.59 x 10^-9 m2 V^-1 s^-1——Table
Exact Reported		6 · SCLC analysis · Table 3
mobility-lifetime product dark3.28 x 10^-13——Table
Exact Reported		6 · SCLC analysis · Table 3
transit time dark3.82 x 10^-5 s——Table
Exact Reported		6 · SCLC analysis · Table 3
diffusion coefficient light3.16 x 10^-10——Table
Exact Reported		6 · SCLC analysis · Table 3
diffusion length light1.386 x 10^-7 m——Table
Exact Reported		6 · SCLC analysis · Table 3
effective carrier mobility light12.66 x 10^-9 m2 V^-1 s^-1——Table
Exact Reported		6 · SCLC analysis · Table 3
mobility-lifetime product light3.84 x 10^-13——Table
Exact Reported		6 · SCLC analysis · Table 3
transit time light3.04 x 10^-5 s——Table
Exact Reported		6 · SCLC analysis · Table 3