Partial recipeSource: Main
Route 1: Other
2 · Device fabrication and characterization
Metal precursorsas-synthesised compound 2
SolventsN,N-dimethylformamide (DMF)
Atmosphereambient for spin coating; vacuum oven drying; Al deposition at 10^-6 Torr
Temperature100 for vacuum oven drying
Timespin coating: 4 min at 800 rpm then 6 min at 1200 rpm; drying several minutes
Substrate orientationprecleaned ITO-coated glass; Al top electrode through shadow mask
Work-upVacuum oven dried to evaporate solvent; aluminium electrode deposited.
Activationvacuum oven at 100 deg C for several minutes
Scalability contextThin-film device fabrication only; effective device area 7.065 x 10^-2 cm2.
Show 4 structured reagent records
| Role | Reagent | Amount / concentration | Source |
|---|---|---|---|
| Other | compound 2 | 40 mg mL-1 in DMF | 2 · Device fabrication and characterization |
| Solvent | N,N-dimethylformamide (DMF) | Not specified | 2 · Device fabrication and characterization |
| Other | ITO-coated glass | Not specified | 2 · Device fabrication and characterization |
| Other | Al electrode | Not specified | 2 · Device fabrication and characterization |