Measurement evidence
Construction of a Succinate-Bridged Cd(II)-Based Two-Dimensional Coordination Polymer for Efficient Optoelectronic Device Fabrication and Explosive Sensing Application · Dutta B., Hazra A., Dey A. et al. · Crystal Growth and Design · 2020 · 765-776
Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.
ITO/compound 1/Al sandwich Schottky diode thin-film device · Thin Film
Compound 1 film device; relative dielectric constant calculated from saturation capacitance.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| Relative dielectric constant | 1.03 | — | — | Text Exact Reported | 770 · Electrical Characterization · Figure 8 |
ITO/compound 1/Al sandwich Schottky diode thin-film device · Thin Film
ITO/compound 1/Al Schottky device; -2 to +2 V at room temperature; dark and 1000 W m-2 illumination/photo condition.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| Barrier height (dark) | 0.33 eV | — | — | Table Exact Reported | 769 · Electrical Characterization · Table 1 |
| Barrier height (light) | 0.26 eV | — | — | Table Exact Reported | 769 · Electrical Characterization · Table 1 |
| Electrical conductivity (dark) | 1.18 x 10^-3 S m-1 | — | — | Table Exact Reported | 769 · Electrical Characterization · Table 1 |
| Electrical conductivity (light)Marked as a best value within this paper | 1.68 x 10^-3 S m-1 | — | — | Table Exact Reported | 769 · Electrical Characterization · Table 1 |
| Effective diode area | 7.065 x 10^-6 m2 | — | — | Text Exact Reported | 768 · Electrical Characterization · Equations 2-4 |
| Device film thickness | ~1 um | — | — | Text Approximate | 767 · Device Fabrication |
| Ideality factor (dark) | 1.98 | — | — | Table Exact Reported | 769 · Electrical Characterization · Table 1 |
| Ideality factor (light) | 1.38 | — | — | Table Exact Reported | 769 · Electrical Characterization · Table 1 |
| Schottky I-V behaviour | ITO/compound 1/Al device shows nonlinear Schottky diode I-V under dark and light | — | — | Qualitative Qualitative | 768 · Electrical Characterization · Figure 3 |
| I-V voltage range upper bound | +2 V | — | — | Text Exact Reported | 768 · Electrical Characterization · Figure 3 |
| I-V voltage range lower bound | -2 V | — | — | Text Exact Reported | 768 · Electrical Characterization · Figure 3 |
| Photosensitivity at 1000 W m-2Marked as a best value within this paper | 1.72 at 1000 W m-2 illumination | — | — | Text Exact Reported | 768 · Electrical Characterization · Figure 3; Table 1 |
| Series resistance from dV/dlnI (dark) | 506.03 ohm | — | — | Table Exact Reported | 769 · Electrical Characterization · Table 1 |
| Series resistance from dV/dlnI (light) | 256.58 ohm | — | — | Table Exact Reported | 769 · Electrical Characterization · Table 1 |
| Series resistance from H(I) (dark) | 493.44 ohm | — | — | Table Exact Reported | 769 · Electrical Characterization · Table 1 |
| Series resistance from H(I) (light) | 235.87 ohm | — | — | Table Exact Reported | 769 · Electrical Characterization · Table 1 |
ITO/compound 1/Al sandwich Schottky diode thin-film device · Thin Film
Dark and photo-illumination I-V data analysed by power-law regions and high-voltage SCLC region.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| Diffusion coefficient (dark) | 7.79 x 10^-6 m2 s-1 | — | — | Table Exact Reported | 770 · Electrical Characterization · Table 2 |
| Diffusion length (dark) | 1.17 x 10^-7 m | — | — | Table Exact Reported | 770 · Electrical Characterization · Table 2 |
| Low-bias transport mechanism | Region I is ohmic; current directly proportional to applied bias voltage (I proportional to V) | — | — | Text Qualitative | 769 · Electrical Characterization · Figure 6 |
| High-bias transport mechanism | Region II follows I proportional to V^2; space-charge-limited current dominated by discrete trapping level | — | — | Text Qualitative | 769 · Electrical Characterization · Figure 6 |
| Effective carrier mobility (dark) | 3.02 x 10^-4 m2 V-1 s-1 | — | — | Text Exact Reported | 770 · Electrical Characterization · Figure 7; Table 2 |
| Effective carrier mobility (photo illumination)Marked as a best value within this paper | 5.58 x 10^-4 m2 V-1 s-1 | — | — | Text Exact Reported | 770 · Electrical Characterization · Figure 7; Table 2 |
| mu_eff tau product (dark) | 2.66 x 10^-10 m2 V-1 | — | — | Table Exact Reported | 770 · Electrical Characterization · Table 2 |
| Transit time (dark) | 8.84 x 10^-10 s | — | — | Table Exact Reported | 770 · Electrical Characterization · Table 2 |
ITO/compound 1/Al sandwich Schottky diode thin-film device · Thin Film
Dark-condition conductivity at room temperature/303 K, 333 K, 363 K and 393 K.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| Dark conductivity at 303 K | 1.18 x 10^-3 S m-1 | — | — | SI Table Exact Reported | S6 · Electrical Conductivity Application · Table S3 |
| Dark conductivity at 333 K | 1.41 x 10^-3 S m-1 | — | — | SI Table Exact Reported | S6 · Electrical Conductivity Application · Table S3 |
| Dark conductivity at 363 K | 1.53 x 10^-3 S m-1 | — | — | SI Table Exact Reported | S6 · Electrical Conductivity Application · Table S3 |
| Dark conductivity at 393 KMarked as a best value within this paper | 1.79 x 10^-3 S m-1 | — | — | SI Table Exact Reported | S6 · Electrical Conductivity Application · Table S3 |