Electrochemistry Application — Conductive metal organic framework for ion-selective membrane-free solid-contact potentiometric Cu2+ sensing

3 measurement groups · 16 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

ISM-free Cu3(HHTP)2/PVDF-coated GCE solid-contact ion-selective electrode · Electrode

Conventional three-electrode setup in 0.1 M KCl; scan rate 5 mV s-1.

Geometry: Cu3(HHTP)2 on GCE working electrode
Context: Cu3(HHTP)2/PVDF electrode without ISM
Measurement source: p003 · 3.1 Structural compositions and electrochemical redox · Fig. 1g

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
CV peak I oxidation potential	-0.02 V vs SCE	—	—	Text Exact Reported	p003 · 3.1 Structural compositions and electrochemical redox · Fig. 1g
CV peak I' reduction potential	-0.10 V vs SCE	—	—	Text Exact Reported	p003 · 3.1 Structural compositions and electrochemical redox · Fig. 1g
CV peak II oxidation potential	0.22 V vs SCE	—	—	Text Exact Reported	p003 · 3.1 Structural compositions and electrochemical redox · Fig. 1g
CV peak II' reduction potential	-0.51 V vs SCE	—	—	Text Exact Reported	p003 · 3.1 Structural compositions and electrochemical redox · Fig. 1g

ISM-free Cu3(HHTP)2/PVDF-coated GCE solid-contact ion-selective electrode · Electrode

OCP in 0.01 M CuCl2; excitation amplitude 5 mV; frequency range 1 MHz to 0.1 Hz.

Atmosphere: Aqueous CuCl2
Geometry: Cu3(HHTP)2/PVDF electrode without ISM
Context: ISM-free target electrode
Measurement source: p005 · 3.3 Anti-interference capability · Fig. 3f; Table S7

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Bulk capacitance from equivalent circuit simulationMarked as a best value within this paper	600 uF	—	—	Text Rounded Reported	p005 · 3.3 Anti-interference capability · Fig. 3f; Table S7
CPE1	2.66 x 10^-3 S sec^n	—	—	SI Table Exact Reported	p005 · Supplementary Table S7 · Table S7
CPE exponent n	0.80	—	—	SI Table Exact Reported	p005 · Supplementary Table S7 · Table S7
Bulk electronic and solution resistance R1Marked as a best value within this paper	359.1 ohm	—	—	SI Table Exact Reported	p005 · Supplementary Table S7 · Table S7
Warburg element W	2.15 x 10^-3 S sec^0.5	—	—	SI Table Exact Reported	p005 · Supplementary Table S7 · Table S7

Cu3(HHTP)2/ISM Cu2+-selective electrode · Electrode

OCP in 0.01 M CuCl2; excitation amplitude 5 mV; frequency range 1 MHz to 0.1 Hz.

Atmosphere: Aqueous CuCl2
Geometry: Cu3(HHTP)2/ISM electrode
Context: ISM comparator electrode
Measurement source: p005 · 3.3 Anti-interference capability · Fig. 3e; Table S6

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Geometric capacitance C1	53.18 pF	—	—	SI Table Exact Reported	p005 · Supplementary Table S6 · Table S6
CPE1	3.97 x 10^-6 S sec^n	—	—	SI Table Exact Reported	p005 · Supplementary Table S6 · Table S6
CPE exponent n	0.66	—	—	SI Table Exact Reported	p005 · Supplementary Table S6 · Table S6
Bulk electronic and solution resistance R1	1100 ohm	—	—	SI Table Exact Reported	p005 · Supplementary Table S6 · Table S6
Bulk membrane resistance R2	31.95 kohm	—	—	SI Table Exact Reported	p005 · Supplementary Table S6 · Table S6
Charge transfer resistance R3	642.8 kohm	—	—	SI Table Exact Reported	p005 · Supplementary Table S6 · Table S6
Warburg element W	1.04 x 10^4 S sec^0.5	—	—	SI Table Exact Reported	p005 · Supplementary Table S6 · Table S6