Electrical Transport — Improved electrical conductivity of Co(ii) and Cu(ii) ladder polymers in the fabrication of photoresponsive Schottky devices

6 measurement groups · 30 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Al/Co-CP/ITO Schottky device · Thin Film

Applied bias +/-1 V under dark and light conditions; conductivity and photosensitivity listed in Table 1.

Temperature: not reported
Atmosphere: dark and light irradiation; light source intensity not reported
Geometry: Al/Co-CP/ITO metal-semiconductor Schottky device; effective diode area 7.065 x 10^-6 m^-2
Context: pristine CP thin-film device
Measurement source: 220 · Current-voltage (I-V) measurement · Table 1

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
photosensitivity S	0.41	—	—	Table Exact Reported	220 · Current-voltage (I-V) measurement · Table 1
dc conductivity dark	4.78 x 10^-6 S m^-1	4.78e-8 S cm^-1	—	Table Exact Reported	220 · Current-voltage (I-V) measurement · Table 1
dc conductivity light	6.15 x 10^-6 S m^-1	6.15e-8 S cm^-1	—	Table Exact Reported	220 · Current-voltage (I-V) measurement · Table 1

Al/Co-CP/ITO Schottky device · Thin Film

G(J) vs J and H(J) vs J fits under dark and light conditions.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
barrier height dark	0.72 eV	—	—	Table Exact Reported	220 · Current-voltage (I-V) measurement · Table 2
barrier height light	0.71 eV	—	—	Table Exact Reported	220 · Current-voltage (I-V) measurement · Table 2
ideality factor dark	0.89	—	—	Table Exact Reported	220 · Current-voltage (I-V) measurement · Table 2
ideality factor light	1.15	—	—	Table Exact Reported	220 · Current-voltage (I-V) measurement · Table 2
series resistance dark	23.42 kOhm	—	—	Table Exact Reported	220 · Current-voltage (I-V) measurement · Table 2
series resistance light	16.41 kOhm	—	—	Table Exact Reported	220 · Current-voltage (I-V) measurement · Table 2

Al/Co-CP/ITO Schottky device · Thin Film

Log I-V slopes identify ohmic, SCLC and high-injection regions; mobility and transit time calculated using Mott-Gurney-type equations.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
epsilon r	1.15 x 10^-10	—	—	Table Exact Reported	221 · SCLC parameters · Table 3
mobility dark	6.94 x 10^-7 m^2 V^-1 s^-1	—	—	Table Exact Reported	221 · SCLC parameters · Table 3
mobility light	8.72 x 10^-7 m^2 V^-1 s^-1	—	—	Table Exact Reported	221 · SCLC parameters · Table 3
I-V log-log regions	region-I: I proportional to V; region-II: I proportional to V^2; region-III: I proportional to V^n, n > 2	—	—	Text Qualitative	220 · SCLC discussion · Fig. 7b
transit time dark	1.66 x 10^-6 s	—	—	Table Exact Reported	221 · SCLC parameters · Table 3
transit time light	1.31 x 10^-6 s	—	—	Table Exact Reported	221 · SCLC parameters · Table 3

Al/Cu-CP/ITO Schottky device · Thin Film

Applied bias +/-1 V under dark and light conditions; conductivity and photosensitivity listed in Table 1.

Temperature: not reported
Atmosphere: dark and light irradiation; light source intensity not reported
Geometry: Al/Cu-CP/ITO metal-semiconductor Schottky device; effective diode area 7.065 x 10^-6 m^-2
Context: pristine CP thin-film device
Measurement source: 220 · Current-voltage (I-V) measurement · Table 1

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
photosensitivity SMarked as a best value within this paper	0.86	—	—	Table Exact Reported	220 · Current-voltage (I-V) measurement · Table 1
dc conductivity darkMarked as a best value within this paper	19.97 x 10^-6 S m^-1	1.997e-7 S cm^-1	—	Table Exact Reported	220 · Current-voltage (I-V) measurement · Table 1
dc conductivity lightMarked as a best value within this paper	70.61 x 10^-6 S m^-1	7.061e-7 S cm^-1	—	Table Exact Reported	220 · Current-voltage (I-V) measurement · Table 1

Al/Cu-CP/ITO Schottky device · Thin Film

G(J) vs J and H(J) vs J fits under dark and light conditions.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
barrier height dark	0.70 eV	—	—	Table Exact Reported	220 · Current-voltage (I-V) measurement · Table 2
barrier height light	0.66 eV	—	—	Table Exact Reported	220 · Current-voltage (I-V) measurement · Table 2
ideality factor dark	1.43	—	—	Table Exact Reported	220 · Current-voltage (I-V) measurement · Table 2
ideality factor light	1.01	—	—	Table Exact Reported	220 · Current-voltage (I-V) measurement · Table 2
series resistance dark	4.21 kOhm	—	—	Table Exact Reported	220 · Current-voltage (I-V) measurement · Table 2
series resistance light	2.60 kOhm	—	—	Table Exact Reported	220 · Current-voltage (I-V) measurement · Table 2

Al/Cu-CP/ITO Schottky device · Thin Film

Log I-V slopes identify ohmic, SCLC and high-injection regions; mobility and transit time calculated using Mott-Gurney-type equations.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
epsilon r	2.34 x 10^-10	—	—	Table Exact Reported	221 · SCLC parameters · Table 3
mobility dark	1.94 x 10^-6 m^2 V^-1 s^-1	—	—	Table Exact Reported	221 · SCLC parameters · Table 3
mobility lightMarked as a best value within this paper	3.70 x 10^-6 m^2 V^-1 s^-1	—	—	Table Exact Reported	221 · SCLC parameters · Table 3
I-V log-log regions	region-I: I proportional to V; region-II: I proportional to V^2; region-III: I proportional to V^n, n > 2	—	—	Text Qualitative	220 · SCLC discussion · Fig. 7b
transit time dark	5.51 x 10^-7 s	—	—	Table Exact Reported	221 · SCLC parameters · Table 3
transit time lightMarked as a best value within this paper	2.90 x 10^-7 s	—	—	Table Exact Reported	221 · SCLC parameters · Table 3