Synthesis · Improved electrical conductivity of Co(ii) and Cu(ii) ladder polymers in the fabrication of photoresponsive Schottky devices

4 structured synthesis routes

Completeness describes how fully the route could be reconstructed from the main article and supporting information.

Partial recipeSource: Main

Route 1: Other

218 · Device fabrication method · Scheme 1

Metal precursorspre-synthesised Co-CP

Linker precursorsnot applicable after CP synthesis

Solventsacetone, 2-propanol and distilled water used for ITO cleaning; coating dispersion solvent not reported

Additivesaluminium top contact

Atmospherevacuum oven drying; Al deposition at 4.7 x 10^-6 torr

Temperaturenot reported

Time1 h vacuum drying

Substrate orientationITO-coated glass substrate

Oxidant / reductantnone reported

Work-upspin-coated film dried in vacuum oven, then Al deposited through quad punch-hole shadow mask

Activationvacuum oven for 1 h

Scalability contextDevice area controlled by shadow mask; spin speed, film thickness and light intensity not reported.

Show 6 structured reagent records

Role	Reagent	Amount / concentration	Source
Other	ITO-coated glass substrate	not reported	218 · Device fabrication method · Scheme 1
Solvent	acetone	not reported · cleaning solvent	218 · Device fabrication method · Scheme 1
Solvent	2-propanol	not reported · cleaning solvent	218 · Device fabrication method · Scheme 1
Solvent	distilled water	not reported · cleaning solvent	218 · Device fabrication method · Scheme 1
Other	Co-CP	not reported · spin-coated thin film	218 · Device fabrication method · Scheme 1
Other	Al	not reported · vacuum-deposited metallic contact	218 · Device fabrication method · Scheme 1

Partial recipeSource: SI

Route 2: Liquid Liquid Interface

2-3 · Synthesis of compound Co-CP

Metal precursorsCo(NO3)2·6H2O (0.058 g, 0.2 mmol)

Linker precursorsbpd (0.042 g, 0.2 mmol); Hnac (0.023 g, 0.2 mmol)

SolventsMeOH, H2O, 1:1 MeOH/H2O buffer solution, EtOH

AdditivesEt3N (0.021 g, 0.2 mmol) to neutralise Hnac

Atmospherenot reported

Temperaturenot reported; crystallisation apparently at ambient temperature

Time72

Oxidant / reductantnone reported

Work-upbrown block-shaped crystals obtained after three days; washing/drying not reported

Activationnone reported

Scalability contextLayering crystallisation at millimole scale; no scale-up discussed.

Show 5 structured reagent records

Role	Reagent	Amount / concentration	Source
Linker	bpd	0.042 g, 0.2 mmol · in MeOH (2 mL)	2-3 · Synthesis of compound Co-CP
Metal Source	Co(NO3)2·6H2O	0.058 g, 0.2 mmol · in H2O (2 mL)	2-3 · Synthesis of compound Co-CP
Solvent	MeOH/H2O buffer solution	2 mL · 1:1 v/v	2-3 · Synthesis of compound Co-CP
Linker	Hnac	0.023 g, 0.2 mmol · in 2 mL EtOH	2-3 · Synthesis of compound Co-CP
Base	Et3N	0.021 g, 0.2 mmol · with Hnac in 2 mL EtOH	2-3 · Synthesis of compound Co-CP

Partial recipeSource: Main

Route 3: Other

218 · Device fabrication method · Scheme 1

Metal precursorspre-synthesised Cu-CP

Linker precursorsnot applicable after CP synthesis

Solventsacetone, 2-propanol and distilled water used for ITO cleaning; coating dispersion solvent not reported

Additivesaluminium top contact

Atmospherevacuum oven drying; Al deposition at 4.7 x 10^-6 torr

Temperaturenot reported

Time1 h vacuum drying

Substrate orientationITO-coated glass substrate

Oxidant / reductantnone reported

Work-upspin-coated film dried in vacuum oven, then Al deposited through quad punch-hole shadow mask

Activationvacuum oven for 1 h

Scalability contextDevice area controlled by shadow mask; spin speed, film thickness and light intensity not reported.

Show 6 structured reagent records

Role	Reagent	Amount / concentration	Source
Other	ITO-coated glass substrate	not reported	218 · Device fabrication method · Scheme 1
Solvent	acetone	not reported · cleaning solvent	218 · Device fabrication method · Scheme 1
Solvent	2-propanol	not reported · cleaning solvent	218 · Device fabrication method · Scheme 1
Solvent	distilled water	not reported · cleaning solvent	218 · Device fabrication method · Scheme 1
Other	Cu-CP	not reported · spin-coated thin film	218 · Device fabrication method · Scheme 1
Other	Al	not reported · vacuum-deposited metallic contact	218 · Device fabrication method · Scheme 1

Partial recipeSource: SI

Route 4: Liquid Liquid Interface

3 · Synthesis of compound Cu-CP

Metal precursorsCu(NO3)2·3H2O (0.048 g, 0.2 mmol)

Linker precursorsbpd (0.042 g, 0.2 mmol); Hnac (0.023 g, 0.2 mmol)

SolventsMeOH, H2O, 1:1 CH3CN/H2O buffer solution, EtOH

AdditivesEt3N (0.021 g, 0.2 mmol) to neutralise Hnac

Atmospherenot reported

Temperaturenot reported; crystallisation apparently at ambient temperature

Time120

Oxidant / reductantnone reported

Work-upgreen block-shaped crystals obtained after five days; washing/drying not reported

Activationnone reported

Scalability contextLayering crystallisation at millimole scale; no scale-up discussed.

Show 5 structured reagent records

Role	Reagent	Amount / concentration	Source
Linker	bpd	0.042 g, 0.2 mmol · in MeOH (2 mL)	3 · Synthesis of compound Cu-CP
Metal Source	Cu(NO3)2·3H2O	0.048 g, 0.2 mmol · in H2O (2 mL)	3 · Synthesis of compound Cu-CP
Solvent	CH3CN/H2O buffer solution	2 mL · 1:1 v/v	3 · Synthesis of compound Cu-CP
Linker	Hnac	0.023 g, 0.2 mmol · in 2 mL EtOH	3 · Synthesis of compound Cu-CP
Base	Et3N	0.021 g, 0.2 mmol · with Hnac in 2 mL EtOH	3 · Synthesis of compound Cu-CP