Electrical Transport — Morphological control of a metal-organic framework for single-crystal electronic device fabrication

4 measurement groups · 9 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

H4TTFTB single crystals · Single Crystal

10 H4TTFTB crystals measured; representative I-V and conductivity distribution reported in Fig. S15

Atmosphere: not fully stated; compared to ambient single-crystal conditions
Geometry: single-crystal electronic devices
Context: H4TTFTB molecular crystal
Measurement source: 5 · Single-crystal electrical conductivity measurements · Fig. S15

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
H4TTFTB average single-crystal DC electrical conductivity	3.08 x 10^-6 S cm^-1	—	—	Text Exact Reported	5 · Single-crystal electrical conductivity measurements · Fig. S15

Zn-9 two-contact single-crystal electronic device · Electrode

Voltage scanned -0.1 to 0.1 V in 1 mV steps using Keithley 2636B; 15 devices

Temperature: 298
Atmosphere: humid air, 38-45% relative humidity
Geometry: manual two-contact probe device; current along crystallographic c axis
Context: pristine Zn2(TTFTB) active crystal
Measurement source: 4-6 · Single-crystal electrical conductivity measurements; DC I-V characterization · Fig. 6

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
previously reported comparable Zn2(TTFTB) conductivity	3.95 x 10^-6 S cm^-1 under similar conditions	—	—	Text Exact Reported	4 · Single-crystal electrical conductivity measurements
representative Zn-9 I-V current at +0.1 V	approximately +1.0 nA at +0.1 V from Fig. 6b axis	—	—	Figure Axis Approximate	4 · Single-crystal electrical conductivity measurements · Fig. 6b
Zn-9 I-V contact behaviour	Ohmic contact with linear current-voltage curves	—	—	Text Qualitative	4 · Single-crystal electrical conductivity measurements · Fig. 6b
Zn-9 average single-crystal DC electrical conductivityMarked as a best value within this paper	3.84 x 10^-6 S cm^-1	—	—	Text Exact Reported	4 · Single-crystal electrical conductivity measurements · Fig. 6c

pressed pellet of Zn-9 · Pellet

Home-built pressed pellet instrument; 0.3 cm diameter, 0.31 cm thickness; Keithley 4200A-SCS; I-V at 297 K

Temperature: 297
Atmosphere: air, 40% relative humidity
Geometry: pressed pellet between stainless-steel rods
Context: pristine Zn2(TTFTB) pellet
Measurement source: 6,20 · Measurements on pressed pellets of Zn-9 · Figure S14

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Zn-9 pellet diameter	0.3 cm	—	—	Text Exact Reported	6 · Measurements on pressed pellets of Zn-9
Zn-9 pellet thickness	0.31 cm	—	—	Text Exact Reported	6 · Measurements on pressed pellets of Zn-9
Zn-9 pressed-pellet DC electrical conductivity	4.29 x 10^-7 S cm^-1	—	—	Text Exact Reported	5 · Single-crystal electrical conductivity measurements · Fig. S14

Zn-3 micro/nano-fabricated single-crystal device attempt · Electrode

Zn-3 suspended in ethanol, spin coated on silicon wafer; Ti/Au electrodes by e-beam lithography and sputtering

Atmosphere: not stated
Geometry: silicon wafer with Ti/Au markers and 5 nm Ti/200 nm Au electrodes
Context: pristine Zn2(TTFTB) active crystal with device contacts
Measurement source: 6,11 · Micro/nano fabrication of single-crystal electronic devices · Figure S5

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Zn-3 micro/nano device outcome	did not yield working devices due to crystal cracking and bad crystal-electrode contact	—	—	Text Qualitative	3 · Attempts to grow thin crystals for micro/nano fabrication · Fig. S5