Electrical Transport — Semiconducting Conjugated Coordination Polymer with High Charge Mobility Enabled by “4 + 2” Phenyl Ligands

Measurement evidence

Electrical Transport

Semiconducting Conjugated Coordination Polymer with High Charge Mobility Enabled by “4 + 2” Phenyl Ligands · Huang X., Fu S., Lin C. et al. · Journal of the American Chemical Society · 2023 · 2430-2438

5 measurement groups · 13 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

steady-state THz spectroscopy and optical-pump THz-probe spectroscopy

Cu3BHT thin film on fused silica/SiO2 substrate · Thin Film

Same THz/OPTP measurements as Cu4DHTTB film; used as metallic control.

Atmosphere
dry N2 for OPTP
Geometry
thin film on fused silica/SiO2
Context
pristine Cu3BHT control film
Measurement source
2435 · Results and Discussion · Figure 4b,c
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Cu3BHT transient photoconductivity signnegative Delta sigma upon photoexcitationText
Qualitative
2435 · Results and Discussion · Figure 4c
Cu3BHT steady-state THz absorptionup to ~80% THz absorptionText
Approximate
2435 · Results and Discussion · Figure 4a,b

parallel four-probe direct-current electrical conductivity

Cu4DHTTB pellet sample · Pellet

Pellet with four parallel gold electrodes, 500 um electrode width, 1 mm spacing, measured under high vacuum and dark environment with 100 mA current.

Temperature
2-300
Atmosphere
high vacuum, dark
Geometry
2 mm x 5 mm pressed pellet; four-electrode setup
Context
pristine polycrystalline Cu4DHTTB pellet
Measurement source
SI pp. 4-5 · Electrical property measurement · Figure 3b
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Arrhenius activation energyabout 0.05 eVText
Approximate
2434 · Results and Discussion · Figure 3b inset
room-temperature electrical conductivityMarked as a best value within this paper~0.2 S cm-1 at room temperatureText
Approximate
2433 · Results and Discussion · Figure 3b
temperature coefficient of conductivitypositive temperature coefficientText
Qualitative
2433 · Results and Discussion · Figure 3b

optical-pump THz-probe spectroscopy and Drude fitting

Cu4DHTTB thin film on fused silica/SiO2 substrate · Thin Film

800 nm, about 50 fs, 1 kHz laser pulses; dry N2; pump fluences 29-79 uJ/cm2 for dynamics and 318 uJ/cm2 for frequency-resolved Drude fits at 10, 100 and 1000 ps.

Atmosphere
dry N2
Geometry
thin film on fused silica/SiO2
Context
pristine Cu4DHTTB film
Measurement source
2435-2436 · Results and Discussion · Figure 4d-f
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
charge carrier density/photoconductivity decay timewithin ~2 psText
Approximate
2436 · Results and Discussion · Figure 4d
mobility relative to other conductive 3D CPs/MOFs2-4 orders of magnitude higherText
Qualitative
2436 · Results and Discussion · Table S1
Cu4DHTTB transient photoconductivity signpositive Delta sigma upon photoexcitationText
Qualitative
2435 · Results and Discussion · Figure 4d
Drude charge momentum scattering timeMarked as a best value within this paper10 +/- 2 fs+/- 2 fsText
Exact Reported
2436 · Results and Discussion · Figure 4e,f
direct current charge mobility from THz Drude fitMarked as a best value within this paper88 +/- 15 cm2 V-1 s-1+/- 15 cm2 V-1 s-1Text
Exact Reported
2436 · Results and Discussion · Figure 4f; Table S1

temperature-dependent THz photoconductivity

Cu4DHTTB thin film on fused silica/SiO2 substrate · Thin Film

Temperature-dependent THz photoconductivity under vacuum pressure < 2 x 10-4 mbar with a cryostat.

Temperature
78-288
Atmosphere
vacuum
Geometry
thin film on silicon/fused silica substrate
Context
pristine Cu4DHTTB film
Measurement source
SI p. 7 · Ultrafast THz spectroscopy · Figure S11
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Cu4DHTTB film crystal domain sizebelow 100 nm<Text
Approximate
2436 · Results and Discussion · Figure S12
maximum photoconductivity increase on coolingslight increase (~20%) as temperature decreases from 288 to 178 K~Text
Approximate
2436 · Results and Discussion · Figure S11

steady-state ultrafast THz spectroscopy, frequency-resolved complex THz conductivity

Cu4DHTTB thin film on fused silica/SiO2 substrate · Thin Film

THz waveforms through blank SiO2, Cu3BHT and Cu4DHTTB films recorded without photoexcitation; Fourier transformed to obtain sigma(omega).

Geometry
thin film on fused silica/SiO2
Context
pristine Cu4DHTTB film compared with Cu3BHT pristine control film
Measurement source
SI p. 6 · Ultrafast THz spectroscopy · Figure 4a,b
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Cu4DHTTB steady-state THz absorptionnegligible THz absorptionText
Qualitative
2435 · Results and Discussion · Figure 4a,b