Electrical Transport — Application of two Cu(II)-azido based 1D coordination polymers in optoelectronic device: Structural characterization and experimental studies

8 measurement groups · 51 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Cheung analysis of forward I-V characteristics

Electrical conductivity

ITO/complex 1/Al thin-film Schottky device · Thin Film

dV/d(ln I) vs I and H(I) vs I plots under dark and illumination conditions; device parameters listed in rendered SI Table S1.

Temperature: room temperature
Geometry: ITO/complex 1/Al
Context: pristine-framework thin-film device
Measurement source: p006-p007 · 3.6 Electrical properties of devices · Fig. 6a; Fig. 7a; Table S1 referenced

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
complex 1 H(I)-derived series resistance under dark	127.45	127.45 ohm	—	SI Table Exact Reported	p003 · Supplementary data · Table S1
complex 1 barrier height under dark	1.16	1.16 eV	—	SI Table Exact Reported	p003 · Supplementary data · Table S1
complex 1 dV/dlnI-derived series resistance under dark	139.72	139.72 ohm	—	SI Table Exact Reported	p003 · Supplementary data · Table S1
complex 1 on/off ratio under dark	3	—	—	SI Table Exact Reported	p003 · Supplementary data · Table S1
complex 1 ideality factor under darkMarked as a best value within this paper	3.21	—	—	SI Table Exact Reported	p003 · Supplementary data · Table S1
complex 1 ideality factor under illumination	1.27	—	—	SI Table Exact Reported	p003 · Supplementary data · Table S1
complex 1 H(I)-derived series resistance under light	38.47	38.47 ohm	—	SI Table Exact Reported	p003 · Supplementary data · Table S1
complex 1 barrier height under light	0.6	0.6 eV	—	SI Table Exact Reported	p003 · Supplementary data · Table S1
complex 1 dV/dlnI-derived series resistance under light	45.31	45.31 ohm	—	SI Table Exact Reported	p003 · Supplementary data · Table S1
complex 1 on/off ratio under lightMarked as a best value within this paper	129	—	—	SI Table Exact Reported	p003 · Supplementary data · Table S1

Cheung analysis of forward I-V characteristics

Electrical conductivity

ITO/complex 2/Al thin-film Schottky device · Thin Film

dV/d(ln I) vs I and H(I) vs I plots under dark and illumination conditions; device parameters listed in rendered SI Table S2.

Temperature: room temperature
Geometry: ITO/complex 2/Al
Context: pristine-framework thin-film device
Measurement source: p006-p007 · 3.6 Electrical properties of devices · Fig. 6b; Fig. 7b; Table S2 referenced

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
complex 2 H(I)-derived series resistance under dark	77.63	77.63 ohm	—	SI Table Exact Reported	p003 · Supplementary data · Table S2
complex 2 barrier height under dark	0.63	0.63 eV	—	SI Table Exact Reported	p003 · Supplementary data · Table S2
complex 2 dV/dlnI-derived series resistance under dark	83.76	83.76 ohm	—	SI Table Exact Reported	p003 · Supplementary data · Table S2
complex 2 on/off ratio under dark	4.31	—	—	SI Table Exact Reported	p003 · Supplementary data · Table S2
complex 2 ideality factor under dark	2.25	—	—	SI Table Exact Reported	p003 · Supplementary data · Table S2
complex 2 ideality factor under illuminationMarked as a best value within this paper	1.59	—	—	SI Table Exact Reported	p003 · Supplementary data · Table S2
complex 2 H(I)-derived series resistance under light	65.25	65.25 ohm	—	SI Table Exact Reported	p003 · Supplementary data · Table S2
complex 2 barrier height under light	0.62	0.62 eV	—	SI Table Exact Reported	p003 · Supplementary data · Table S2
complex 2 dV/dlnI-derived series resistance under light	29.97	29.97 ohm	—	SI Table Exact Reported	p003 · Supplementary data · Table S2
complex 2 on/off ratio under light	104	—	—	SI Table Exact Reported	p003 · Supplementary data · Table S2

Capacitance-frequency measurement for relative dielectric constant

ITO/complex 1/Al thin-film Schottky device · Thin Film

Relative dielectric constant calculated from capacitance vs frequency plots in rendered SI Fig. S4 using epsilon_r = C.L/(epsilon_0 A).

Geometry: ITO/complex 1/Al thin film; diode area referenced as 8.0 x 10^-2 cm2
Context: pristine-framework thin-film device
Measurement source: p008 · 3.6 Electrical properties of devices · Fig. S4 referenced

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
complex 1 relative dielectric constant	4.23	—	—	Text Exact Reported	p008 · 3.6 Electrical properties of devices · Fig. S4 referenced

Capacitance-frequency measurement for relative dielectric constant

ITO/complex 2/Al thin-film Schottky device · Thin Film

Relative dielectric constant calculated from capacitance vs frequency plots in rendered SI Fig. S4 using epsilon_r = C.L/(epsilon_0 A).

Geometry: ITO/complex 2/Al thin film; diode area referenced as 8.0 x 10^-2 cm2
Context: pristine-framework thin-film device
Measurement source: p008 · 3.6 Electrical properties of devices · Fig. S4 referenced

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
complex 2 relative dielectric constantMarked as a best value within this paper	1.27	—	—	Text Exact Reported	p008 · 3.6 Electrical properties of devices · Fig. S4 referenced

Two-probe current-voltage measurement

Electrical conductivity

ITO/complex 1/Al thin-film Schottky device · Thin Film

Keithley 4200; dark and 1 Sun illumination; voltage range -1 to +1 V.

Temperature: room temperature
Geometry: ITO/complex 1/Al; ITO bottom contact and Al top contact
Context: pristine-framework thin-film device
Measurement source: p005-p006 · 3.6 Electrical properties of devices · Fig. 5a

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
complex 1 room-temperature conductivity under dark	13.45 x 10^-5 S cm^-1	0.0001345 S cm-1	—	SI Table Exact Reported	p003 · Supplementary data · Table S1
complex 1 room-temperature conductivity under 1 Sun illumination	28.14 x 10^-5 S cm^-1	0.0002814 S cm-1	—	SI Table Exact Reported	p003 · Supplementary data · Table S1
complex 1 approximate current at +1 V under dark	approximately 0.009 A at +1 V	0.009 A	visual estimate from figure axis	Figure Axis Approximate	p006 · 3.6 Electrical properties of devices · Fig. 5a
complex 1 approximate current at +1 V under illumination	approximately 0.015 A at +1 V	0.015 A	visual estimate from figure axis	Figure Axis Approximate	p006 · 3.6 Electrical properties of devices · Fig. 5a
effective diode area used for all devices	8.0 x 10^-2 cm2	0.08 cm2	—	Text Exact Reported	p005 · 3.6 Electrical properties of devices
effective Richardson constant used for all devices	32 A K^-2 cm^-2	32 A K-2 cm-2	—	Text Exact Reported	p005 · 3.6 Electrical properties of devices

Two-probe current-voltage measurement

Electrical conductivity

ITO/complex 2/Al thin-film Schottky device · Thin Film

Keithley 4200; dark and 1 Sun illumination; voltage range -1 to +1 V.

Temperature: room temperature
Geometry: ITO/complex 2/Al; ITO bottom contact and Al top contact
Context: pristine-framework thin-film device
Measurement source: p005-p006 · 3.6 Electrical properties of devices · Fig. 5b

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
complex 2 room-temperature conductivity under darkMarked as a best value within this paper	12.54 x 10^-5 S cm^-1	0.0001254 S cm-1	—	SI Table Exact Reported	p003 · Supplementary data · Table S2
complex 2 room-temperature conductivity under 1 Sun illuminationMarked as a best value within this paper	20.94 x 10^-5 S cm^-1	0.0002094 S cm-1	—	SI Table Exact Reported	p003 · Supplementary data · Table S2
complex 2 approximate current at +1 V under dark	approximately 0.0085 A at +1 V	0.0085 A	visual estimate from figure axis	Figure Axis Approximate	p006 · 3.6 Electrical properties of devices · Fig. 5b
complex 2 approximate current at +1 V under illuminationMarked as a best value within this paper	approximately 0.0175 A at +1 V	0.0175 A	visual estimate from figure axis	Figure Axis Approximate	p006 · 3.6 Electrical properties of devices · Fig. 5b

Space-charge-limited-current analysis from log(I) vs log(V), I vs V2 and forward I-V curves

Electrical conductivity Space-charge-limited current analysis

ITO/complex 1/Al thin-film Schottky device · Thin Film

Dark and illumination conditions; Mott-Gurney equation used for mobility; Table S1/S2 values extracted from rendered SI surrogate.

Temperature: room temperature
Geometry: ITO/complex 1/Al, film thickness about 1 um
Context: pristine-framework thin-film device
Measurement source: p007-p008 · 3.6 Electrical properties of devices · Fig. 8a-b; Fig. S3 referenced; Table S1 referenced

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
complex 1 reported D parameter under dark	2.46 x 10^-4	—	—	SI Table Exact Reported	p003 · Supplementary data · Table S1
complex 1 diffusion length LD under dark	31.927 x 10^-2	—	—	SI Table Exact Reported	p003 · Supplementary data · Table S1
complex 1 carrier transit/lifetime under dark	2.07	2.07 s	—	SI Table Exact Reported	p003 · Supplementary data · Table S1
complex 1 effective carrier mobility under dark	19.3 x 10^-4 cm2 V^-1 s^-1	0.00193 cm2 V-1 s-1	—	SI Table Exact Reported	p003 · Supplementary data · Table S1
complex 1 reported D parameter under light	3.83 x 10^-4	—	—	SI Table Exact Reported	p003 · Supplementary data · Table S1
complex 1 diffusion length LD under light	35.04 x 10^-2	—	—	SI Table Exact Reported	p003 · Supplementary data · Table S1
complex 1 carrier transit/lifetime under light	1.6	1.6 s	—	SI Table Exact Reported	p003 · Supplementary data · Table S1
complex 1 effective carrier mobility under lightMarked as a best value within this paper	75.85 x 10^-4 cm2 V^-1 s^-1	0.007585 cm2 V-1 s-1	—	SI Table Exact Reported	p003 · Supplementary data · Table S1
film thickness used for both devices	about 1 um	1 um	about	Text Approximate	p008 · 3.6 Electrical properties of devices
complex 1 SCLC conduction regions	two separate linear regions; low-potential ohmic region I and high-bias SCLC region II	—	—	Text Qualitative	p007 · 3.6 Electrical properties of devices · Fig. 8a-b

Space-charge-limited-current analysis from log(I) vs log(V), I vs V2 and forward I-V curves

Electrical conductivity Space-charge-limited current analysis

ITO/complex 2/Al thin-film Schottky device · Thin Film

Dark and illumination conditions; Mott-Gurney equation used for mobility; Table S1/S2 values extracted from rendered SI surrogate.

Temperature: room temperature
Geometry: ITO/complex 2/Al, film thickness about 1 um
Context: pristine-framework thin-film device
Measurement source: p007-p008 · 3.6 Electrical properties of devices · Fig. 8c-d; Fig. S3 referenced; Table S2 referenced

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
complex 2 reported D parameter under dark	2.431 x 10^-4	—	—	SI Table Exact Reported	p003 · Supplementary data · Table S2
complex 2 diffusion length LD under dark	31.984 x 10^-2	—	—	SI Table Exact Reported	p003 · Supplementary data · Table S2
complex 2 carrier transit/lifetime under dark	2.1	2.1 s	—	SI Table Exact Reported	p003 · Supplementary data · Table S2
complex 2 effective carrier mobility under dark	18.3 x 10^-4 cm2 V^-1 s^-1	0.0018300000000000002 cm2 V-1 s-1	—	SI Table Exact Reported	p003 · Supplementary data · Table S2
complex 2 reported D parameter under light	4.152 x 10^-4	—	—	SI Table Exact Reported	p003 · Supplementary data · Table S2
complex 2 diffusion length LD under lightMarked as a best value within this paper	37.968 x 10^-2	—	—	SI Table Exact Reported	p003 · Supplementary data · Table S2
complex 2 carrier transit/lifetime under light	1.73	1.73 s	—	SI Table Exact Reported	p003 · Supplementary data · Table S2
complex 2 effective carrier mobility under light	68.07 x 10^-4 cm2 V^-1 s^-1	0.006807 cm2 V-1 s-1	—	SI Table Exact Reported	p003 · Supplementary data · Table S2
complex 2 SCLC conduction regions	two separate linear regions; low-potential ohmic region I and high-bias SCLC region II	—	—	Text Qualitative	p007 · 3.6 Electrical properties of devices · Fig. 8c-d