Electrical Transport — Photodimerization of a 1D Ladder Polymer through Single-Crystal to Single-Crystal Transformation Has an Effect on Electrical Conductivity

8 measurement groups · 33 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Frequency-dependent capacitance measurement; saturated capacitance used to calculate relative permittivity

Compound 1 capacitance/permittivity pellet or film sample · Pellet

SI equation epsilon_r = C_sat L/(epsilon_0 A), with L approximately 10 um and A = 7.056 x 10^-6 m2; capacitance plotted versus frequency in Figure S9.

Geometry: capacitance pellet/film contact geometry; exact electrode stack not further specified
Context: compound 1 dielectric support measurement
Measurement source: SI pp011-012 · Frequency Dependent Capacitance Measurements · Figure S9; eq S1

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
effective contact area used for relative permittivity	7.056 x 10^-6 m2	—	—	Text Rounded Reported	SI p012 · Frequency Dependent Capacitance Measurements · Figure S9; eq S1
film thickness used for relative permittivity	~10 um	—	—	Text Approximate	SI p012 · Frequency Dependent Capacitance Measurements · Figure S9; eq S1
relative permittivity epsilon_r	2.4	—	—	Text Rounded Reported	SI p012 · Frequency Dependent Capacitance Measurements · Figure S9; eq S1
high-frequency saturated capacitanceMarked as a best value within this paper	approximately 1.5 x 10^-11 F from Figure S9 plateau	—	visual estimate	Visual Estimate Approximate	SI p012 · Frequency Dependent Capacitance Measurements · Figure S9; eq S1

Dark current density-voltage (J-V) measurement using Keithley 2635B sourcemeter

FTO/compound 1/Al Schottky diode · Thin Film

Bias voltage from -1 to +1 V under ambient conditions in the dark.

Atmosphere: ambient, dark
Geometry: FTO/compound 1/Al Schottky diode
Context: pristine compound 1 device
Measurement source: p002-p003 / article pp.4058-4059 · Experimental Section - Device Fabrication and Characterization; Results - Electrical Studies · Figure 3a,d

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
current density at +1 V from J-V plot	approximately 400 A m^-2 at +1 V	—	visual estimate from plotted axis	Visual Estimate Approximate	p003 / article p.4059 · Figure 3 · Figure 3a
Ohmic conductivityMarked as a best value within this paper	1.05 x 10^-3 S m^-1	—	—	Table Rounded Reported	p004 / article p.4060 · Table 1 · Table 1
compound 1 Ohmic conductivity enhancement over compound 2	567 times higher	—	—	Text Rounded Reported	p003 / article p.4059 · Results and Discussion - Electrical Studies · Figure 3a; Table 1

Thermionic emission analysis with Cheung's method, dV/dlnJ vs J and H(J) vs J

FTO/compound 1/Al Schottky diode · Thin Film

Schottky diode parameters derived from dark J-V curves; Richardson constant taken as 1.20 x 10^6 A K^-2 m^-2.

Atmosphere: ambient, dark
Geometry: FTO/compound 1/Al Schottky diode
Context: pristine compound 1 device
Measurement source: p003-p004 / article pp.4059-4060 · Results and Discussion - Electrical Studies · Figure 3b; Table 1

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
barrier height from H vs JMarked as a best value within this paper	0.66 eV	—	—	Table Rounded Reported	p004 / article p.4060 · Table 1 · Table 1
ideality factorMarked as a best value within this paper	0.92	—	—	Table Rounded Reported	p004 / article p.4060 · Table 1 · Table 1
rectification ratioMarked as a best value within this paper	22.84	—	—	Table Rounded Reported	p004 / article p.4060 · Table 1 · Table 1
series resistance from dV/dlnJ vs JMarked as a best value within this paper	1.09 x 10^3 ohm	—	—	Table Rounded Reported	p004 / article p.4060 · Table 1 · Table 1
series resistance from H vs JMarked as a best value within this paper	1.14 x 10^3 ohm	—	—	Table Rounded Reported	p004 / article p.4060 · Table 1 · Table 1

Space-charge-limited current (SCLC) analysis of semilog J-V and J-V2 plots

Space-charge-limited current analysis

FTO/compound 1/Al Schottky diode · Thin Film

SCLC/charge transport parameters derived from the second region of J-V characteristics using Mott-Gurney analysis.

Atmosphere: ambient, dark
Geometry: FTO/compound 1/Al Schottky diode
Context: pristine compound 1 device
Measurement source: p004 / article p.4060 · Results and Discussion - Electrical Studies · Figure 3d,e; Table 2

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
carrier mobilityMarked as a best value within this paper	1297 x 10^-5 m2 V^-1 s^-1	0.01297 m2 V^-1 s^-1	—	Table Rounded Reported	p004 / article p.4060 · Table 2 · Table 2
charge concentrationMarked as a best value within this paper	15.2 x 10^17 m^-3	1520000000000000000 m^-3	—	Table Rounded Reported	p004 / article p.4060 · Table 2 · Table 2
mobility-lifetime productMarked as a best value within this paper	9.84 x 10^-11 m2 V^-1	9.84e-11 m2 V^-1	—	Table Rounded Reported	p004 / article p.4060 · Table 2 · Table 2
SCLC conductivityMarked as a best value within this paper	3.15 x 10^-3 S m^-1	—	—	Table Rounded Reported	p004 / article p.4060 · Table 2 · Table 2
transit timeMarked as a best value within this paper	7.59 x 10^-9 s	7.59e-9 s	—	Table Rounded Reported	p004 / article p.4060 · Table 2 · Table 2

Frequency-dependent capacitance measurement; saturated capacitance used to calculate relative permittivity

Compound 2 capacitance/permittivity pellet or film sample · Pellet

SI equation epsilon_r = C_sat L/(epsilon_0 A), with L approximately 10 um and A = 7.056 x 10^-6 m2; capacitance plotted versus frequency in Figure S9.

Geometry: capacitance pellet/film contact geometry; exact electrode stack not further specified
Context: compound 2 dielectric support measurement
Measurement source: SI pp011-012 · Frequency Dependent Capacitance Measurements · Figure S9; eq S1

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
effective contact area used for relative permittivity	7.056 x 10^-6 m2	—	—	Text Rounded Reported	SI p012 · Frequency Dependent Capacitance Measurements · Figure S9; eq S1
film thickness used for relative permittivity	~10 um	—	—	Text Approximate	SI p012 · Frequency Dependent Capacitance Measurements · Figure S9; eq S1
relative permittivity epsilon_r	1.2	—	—	Text Rounded Reported	SI p012 · Frequency Dependent Capacitance Measurements · Figure S9; eq S1
high-frequency saturated capacitance	approximately 7.5 x 10^-12 F from Figure S9 plateau	—	visual estimate	Visual Estimate Approximate	SI p012 · Frequency Dependent Capacitance Measurements · Figure S9; eq S1

Dark current density-voltage (J-V) measurement using Keithley 2635B sourcemeter

FTO/compound 2/Al Schottky diode · Thin Film

Bias voltage from -1 to +1 V under ambient conditions in the dark.

Atmosphere: ambient, dark
Geometry: FTO/compound 2/Al Schottky diode
Context: photodimerised compound 2 device
Measurement source: p002-p003 / article pp.4058-4059 · Experimental Section - Device Fabrication and Characterization; Results - Electrical Studies · Figure 3a,d

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
current density at +1 V from inset J-V plot	approximately 2 A m^-2 at +1 V	—	visual estimate from inset plotted axis	Visual Estimate Approximate	p003 / article p.4059 · Figure 3 · Figure 3a inset
Ohmic conductivity	1.85 x 10^-6 S m^-1	—	—	Table Rounded Reported	p004 / article p.4060 · Table 1 · Table 1

Thermionic emission analysis with Cheung's method, dV/dlnJ vs J and H(J) vs J

FTO/compound 2/Al Schottky diode · Thin Film

Schottky diode parameters derived from dark J-V curves; Richardson constant taken as 1.20 x 10^6 A K^-2 m^-2.

Atmosphere: ambient, dark
Geometry: FTO/compound 2/Al Schottky diode
Context: photodimerised compound 2 device
Measurement source: p003-p004 / article pp.4059-4060 · Results and Discussion - Electrical Studies · Figure 3c; Table 1

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
barrier height from H vs J	0.81 eV	—	—	Table Rounded Reported	p004 / article p.4060 · Table 1 · Table 1
ideality factor	0.30	—	—	Table Rounded Reported	p004 / article p.4060 · Table 1 · Table 1
rectification ratio	8.03	—	—	Table Rounded Reported	p004 / article p.4060 · Table 1 · Table 1
series resistance from dV/dlnJ vs J	7.90 x 10^5 ohm	—	—	Table Rounded Reported	p004 / article p.4060 · Table 1 · Table 1
series resistance from H vs J	7.54 x 10^5 ohm	—	—	Table Rounded Reported	p004 / article p.4060 · Table 1 · Table 1

Space-charge-limited current (SCLC) analysis of semilog J-V and J-V2 plots

Space-charge-limited current analysis

FTO/compound 2/Al Schottky diode · Thin Film

SCLC/charge transport parameters derived from the second region of J-V characteristics using Mott-Gurney analysis.

Atmosphere: ambient, dark
Geometry: FTO/compound 2/Al Schottky diode
Context: photodimerised compound 2 device
Measurement source: p004 / article p.4060 · Results and Discussion - Electrical Studies · Figure 3d,e; Table 2

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
carrier mobility	4.58 x 10^-5 m2 V^-1 s^-1	0.0000458 m2 V^-1 s^-1	—	Table Rounded Reported	p004 / article p.4060 · Table 2 · Table 2
charge concentration	7.83 x 10^17 m^-3	783000000000000000 m^-3	—	Table Rounded Reported	p004 / article p.4060 · Table 2 · Table 2
mobility-lifetime product	9.52 x 10^-11 m2 V^-1	9.52e-11 m2 V^-1	—	Table Rounded Reported	p004 / article p.4060 · Table 2 · Table 2
SCLC conductivity	5.74 x 10^-6 S m^-1	—	—	Table Rounded Reported	p004 / article p.4060 · Table 2 · Table 2
transit time	2080 x 10^-9 s	0.00000208 s	—	Table Rounded Reported	p004 / article p.4060 · Table 2 · Table 2