Complete recipeSource: SI
Route 1: Air Liquid Interface
p002 · Experimental Section - Synthesis of EC-MOF film · Figure S2
Metal precursorsNi(NO3)2.6H2O, 15 mg (0.052 mmol)
Linker precursorsHAB.3HCl, 5 mg (0.109 mmol)
SolventsDegassed water: 8 mL for Ni salt solution and 8 mL for HAB.3HCl solution
AdditivesEthylenediamine, 10 uL
AtmosphereSolutions mixed in an O2-free acrylic isolation glovebox; sealed Petri dish/plastic container then transferred to ambient environment
Temperatureambient
Time12
Substrate orientationFilm formed at air/liquid surface and transferred to prepared silicon wafer substrate
Oxidant / reductantOxidation indicated schematically in Figure S2; no separate oxidant amount reported
Work-upTransferred film to silicon wafer; water residue removed by natural drying in air
Show 4 structured reagent records
| Role | Reagent | Amount / concentration | Source |
|---|---|---|---|
| Metal Source | Ni(NO3)2.6H2O | 15 mg (0.052 mmol) | p002 · Experimental Section - Synthesis of EC-MOF film · Figure S2 |
| Linker | HAB.3HCl | 5 mg (0.109 mmol) | p002 · Experimental Section - Synthesis of EC-MOF film · Figure S2 |
| Solvent | degassed water | 8 mL + 8 mL | p002 · Experimental Section - Synthesis of EC-MOF film · Figure S2 |
| Base | ethylenediamine | 10 uL | p002 · Experimental Section - Synthesis of EC-MOF film · Figure S2 |