Electrical Transport — Modulating the electrical conductivity of metal-organic framework films with intercalated guest π-systems

8 measurement groups · 59 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

four-probe I-V measurement after C60 exposure

Electrical conductivity

C60-exposed BMOF film · Thin Film

BMOF film soaked in C60 solution for 7 d

Temperature: 298
Geometry: four-probe BMOF/ZnO-glass device
Context: C60 exclusion control compared with pristine BMOF
Measurement source: S5/S11 · Conductivity Measurement · Tables S1-S2

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
C60-exposed BMOF film electrical conductivity	4 x 10^-5 S m^-1 after 7 d	0.00004 S m^-1	—	Text Exact Reported	897 · Results and discussion
C60 molecular diameter relevant to size exclusion	d = 11 A	—	—	Text Rounded Reported	897 · Results and discussion
Dip-coated dopant-only films are highly insulating	very high resistance exceeding detection limit of source meter	—	—	Text Qualitative	897 · Results and discussion
C60-soaked BMOF Film Table S1 component resistance	325 MOhm	—	—	SI Table Rounded Reported	S11 · Table S1 · Table S1
C60-soaked BMOF Film Table S1 device resistance	132 ± 10.9 MOhm	—	10.9	SI Table Rounded Reported	S11 · Table S1 · Table S1
C60-soaked BMOF Film Table S1 component conductivity	0.4 x 10^-4 S/m	—	—	SI Table Rounded Reported	S11 · Table S1 · Table S1
C60-soaked BMOF Table S2 average conductivity	4.4e-05 S/m	—	0.7 x 10^-5	SI Table Rounded Reported	S11 · Table S2 · Table S2
C60-soaked BMOF individual device 1 conductivity	4.8e-05 S/m	—	—	SI Table Rounded Reported	S11 · Table S2 · Table S2
C60-soaked BMOF individual device 2 conductivity	4.81e-05 S/m	—	—	SI Table Rounded Reported	S11 · Table S2 · Table S2
C60-soaked BMOF individual device 3 conductivity	3.48e-05 S/m	—	—	SI Table Rounded Reported	S11 · Table S2 · Table S2

four-probe I-V measurement after guest infiltration

Electrical conductivity

DFDNB-loaded BMOF film · Thin Film

BMOF/ZnO device soaked in 30 mM DFDNB/MeNO2 for 24 h

Temperature: 298
Geometry: four-probe BMOF/ZnO-glass device
Context: guest-loaded BMOF compared with pristine BMOF control
Measurement source: S5/S11 · Conductivity Measurement · Tables S1-S2

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
DFDNB-loaded BMOF film electrical conductivity	3.5 x 10^-4 S m^-1 after 24 h	0.00035 S m^-1	—	Text Exact Reported	897 · Results and discussion · Figure S6 referenced
DFDNB conductivity improvement	six-fold improvement	—	—	Text Rounded Reported	897 · Results and discussion · Figure S6 referenced
DFDNB-Doped BMOF Film Table S1 component resistance	36 MOhm	—	—	SI Table Rounded Reported	S11 · Table S1 · Table S1
DFDNB-Doped BMOF Film Table S1 device resistance	31 ± 4.3 MOhm	—	4.3	SI Table Rounded Reported	S11 · Table S1 · Table S1
DFDNB-Doped BMOF Film Table S1 component conductivity	3.5 x 10^-4 S/m	—	—	SI Table Rounded Reported	S11 · Table S1 · Table S1
DFDNB-Doped BMOF Table S2 average conductivity	0.00035 S/m	—	0.6 x 10^-4	SI Table Rounded Reported	S11 · Table S2 · Table S2
DFDNB-Doped BMOF individual device 1 conductivity	0.000421 S/m	—	—	SI Table Rounded Reported	S11 · Table S2 · Table S2
DFDNB-Doped BMOF individual device 2 conductivity	0.000322 S/m	—	—	SI Table Rounded Reported	S11 · Table S2 · Table S2
DFDNB-Doped BMOF individual device 3 conductivity	0.000312 S/m	—	—	SI Table Rounded Reported	S11 · Table S2 · Table S2

four-probe I-V measurement after guest infiltration

Electrical conductivity

DNT-loaded BMOF film · Thin Film

BMOF/ZnO device soaked in 30 mM DNT/MeNO2 for 24 h

Temperature: 298
Geometry: four-probe BMOF/ZnO-glass device
Context: guest-loaded BMOF compared with pristine BMOF control
Measurement source: S5/S11 · Conductivity Measurement · Tables S1-S2

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
DNT-loaded BMOF film electrical conductivity	1.5 x 10^-4 S m^-1 after 24 h	0.00015 S m^-1	—	Text Exact Reported	897 · Results and discussion · Figure S6 referenced
DNT conductivity improvement	2.5-fold improvement	—	—	Text Rounded Reported	897 · Results and discussion · Figure S6 referenced
DNT-Doped BMOF Film Table S1 component resistance	83 MOhm	—	—	SI Table Rounded Reported	S11 · Table S1 · Table S1
DNT-Doped BMOF Film Table S1 device resistance	60 ± 6.5 MOhm	—	6.5	SI Table Rounded Reported	S11 · Table S1 · Table S1
DNT-Doped BMOF Film Table S1 component conductivity	1.5 x 10^-4 S/m	—	—	SI Table Rounded Reported	S11 · Table S1 · Table S1
DNT-Doped BMOF Table S2 average conductivity	0.00015 S/m	—	0.2 x 10^-4	SI Table Rounded Reported	S11 · Table S2 · Table S2
DNT-Doped BMOF individual device 1 conductivity	0.000133 S/m	—	—	SI Table Rounded Reported	S11 · Table S2 · Table S2
DNT-Doped BMOF individual device 2 conductivity	0.000153 S/m	—	—	SI Table Rounded Reported	S11 · Table S2 · Table S2
DNT-Doped BMOF individual device 3 conductivity	0.000171 S/m	—	—	SI Table Rounded Reported	S11 · Table S2 · Table S2

four-probe I-V measurement after guest infiltration

Electrical conductivity

MV2+-loaded BMOF film · Thin Film

BMOF/ZnO device soaked in 30 mM MV2+/MeNO2; measured under same conditions as pristine device

Temperature: 298
Geometry: four-probe BMOF/ZnO-glass device
Context: guest-loaded BMOF compared with pristine BMOF control
Measurement source: S5/S11 · Conductivity Measurement · Tables S1-S2

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
I-V response before and after MV2+ loading	Figure 4a shows approximately linear I-V traces from -1.6 to +1.6 V; MV2+-loaded current is much larger than pristine	—	—	Figure Axis Qualitative	897 · Results and discussion · Figure 4a
MV2+-loaded BMOF film electrical conductivityMarked as a best value within this paper	2.3 x 10^-3 S m^-1 after 70 h	0.0023 S m^-1	—	Text Exact Reported	897 · Results and discussion · Figure 4a
MV2+ conductivity improvementMarked as a best value within this paper	35-fold improvement from undoped BMOF	—	—	Text Rounded Reported	897 · Results and discussion · Figure 4a
MV2+-Doped BMOF Film Table S1 component resistance	5.4 MOhm	—	—	SI Table Rounded Reported	S11 · Table S1 · Table S1
MV2+-Doped BMOF Film Table S1 device resistance	5.3 ± 0.8 MOhm	—	0.8	SI Table Rounded Reported	S11 · Table S1 · Table S1
MV2+-Doped BMOF Film Table S1 component conductivityMarked as a best value within this paper	23 x 10^-4 S/m	—	—	SI Table Rounded Reported	S11 · Table S1 · Table S1
MV2+-Doped BMOF Table S2 average conductivityMarked as a best value within this paper	0.0023 S/m	—	0.3 x 10^-3	SI Table Rounded Reported	S11 · Table S2 · Table S2
MV2+-Doped BMOF individual device 1 conductivity	0.00196 S/m	—	—	SI Table Rounded Reported	S11 · Table S2 · Table S2
MV2+-Doped BMOF individual device 2 conductivity	0.00234 S/m	—	—	SI Table Rounded Reported	S11 · Table S2 · Table S2
MV2+-Doped BMOF individual device 3 conductivity	0.00265 S/m	—	—	SI Table Rounded Reported	S11 · Table S2 · Table S2

four-probe I-V measurement with ZnO parallel resistance subtraction

Electrical conductivity

Pristine BMOF film on ZnO · Thin Film

BMOF/ZnO devices measured before guest infiltration at 25 C; BMOF component resistance extracted from device and bare ZnO resistances

Temperature: 298
Geometry: four Au electrodes on ZnO-coated glass; 1 mm probe spacing; BMOF 20 micrometres; ZnO 3 micrometres
Context: pristine BMOF conductivity extracted from BMOF/ZnO composite device
Measurement source: S5/S11 · Conductivity Measurement · Tables S1-S2

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Pristine BMOF film electrical conductivity	ca. 6 x 10^-5 S m^-1 (25 C)	0.00006 S m^-1	ca.	Text Approximate	896 · Results and discussion · Figure 4a; Tables S1 and S2 referenced
BMOF Film (Undoped) Table S1 component resistance	216 MOhm	—	—	SI Table Rounded Reported	S11 · Table S1 · Table S1
BMOF Film (Undoped) Table S1 device resistance	109 ± 1 MOhm	—	1	SI Table Rounded Reported	S11 · Table S1 · Table S1
BMOF Film (Undoped) Table S1 component conductivity	0.6 x 10^-4 S/m	—	—	SI Table Rounded Reported	S11 · Table S1 · Table S1
BMOF (Undoped) Table S2 average conductivity	5.8e-05 S/m	—	0.2 x 10^-5	SI Table Rounded Reported	S11 · Table S2 · Table S2
BMOF (Undoped) individual device 1 conductivity	5.6e-05 S/m	—	—	SI Table Rounded Reported	S11 · Table S2 · Table S2
BMOF (Undoped) individual device 2 conductivity	5.86e-05 S/m	—	—	SI Table Rounded Reported	S11 · Table S2 · Table S2
BMOF (Undoped) individual device 3 conductivity	5.89e-05 S/m	—	—	SI Table Rounded Reported	S11 · Table S2 · Table S2

Four-probe I-V measurement with Keithley 2400 source meter and LabView

Electrical conductivity

Bare annealed ZnO film · Thin Film

Bare ZnO-glass device measured under ambient conditions (25 C).

Temperature: 298
Atmosphere: ambient
Geometry: four Au electrodes; output voltage between inner probes and current through outer probes
Context: ZnO support/control component
Measurement source: S5/S11 · Conductivity Measurement · Tables S1-S2

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
ZnO Table S1 component resistance	220 MOhm	—	—	SI Table Rounded Reported	S11 · Table S1 · Table S1
ZnO Table S1 device resistance	220 ± 9.6 MOhm	—	9.6	SI Table Rounded Reported	S11 · Table S1 · Table S1
ZnO Table S1 component conductivity	6.3 x 10^-4 S/m	—	—	SI Table Rounded Reported	S11 · Table S1 · Table S1
ZnO Table S2 average conductivity	0.00063 S/m	—	0.3 x 10^-4	SI Table Rounded Reported	S11 · Table S2 · Table S2
ZnO individual device 1 conductivity	0.000659 S/m	—	—	SI Table Rounded Reported	S11 · Table S2 · Table S2
ZnO individual device 2 conductivity	0.000607 S/m	—	—	SI Table Rounded Reported	S11 · Table S2 · Table S2
ZnO individual device 3 conductivity	0.000615 S/m	—	—	SI Table Rounded Reported	S11 · Table S2 · Table S2

four-probe conductivity after solvent washing/soaking

Electrical conductivity

MV2+-loaded BMOF film · Thin Film

quick washing of doped films and prolonged 72 h soaking in fresh solvents

Geometry: doped BMOF/ZnO four-probe devices
Context: guest-loaded BMOF reversibility
Measurement source: 897 · Results and discussion

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Prolonged fresh-solvent soaking reverses doping	after 72 h fresh-solvent soaking, conductivities dropped close to undoped BMOF films	—	—	Text Qualitative	897 · Results and discussion
Conductivity after prolonged fresh-solvent soaking	ca. 3.75 x 10^-5 S/m	—	—	Text Approximate	S6 · Conductivity Measurement
Quick solvent washing retains conductivity	conductivities after quick washing remain practically unchanged from corresponding unwashed films	—	—	Text Qualitative	897 · Results and discussion

Four-probe I-V time-course after MV2+ soaking

Electrical conductivity

MV2+-loaded BMOF film · Thin Film

MV2+ solution 30 mM/MeNO2; conductivity reported after 24 h, 48 h and 70 h soaking.

Temperature: 298
Atmosphere: ambient
Geometry: BMOF/ZnO-glass four-probe device
Context: guest-loaded BMOF film
Measurement source: S5 · Conductivity Measurement

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
MV2+-doped BMOF conductivity after 24 h	0.98 x 10^-3 S/m	—	—	Text Rounded Reported	S5 · Conductivity Measurement
MV2+-doped BMOF conductivity after 48 h	1.95 x 10^-3 S/m	—	—	Text Rounded Reported	S5 · Conductivity Measurement
MV2+-doped BMOF saturation conductivity after 70 hMarked as a best value within this paper	2.3 x 10^-3 S/m	—	—	Text Rounded Reported	S5 · Conductivity Measurement