Electrical Transport — Bunching and Immobilization of Ionic Liquids in Nanoporous Metal-Organic Framework

Measurement evidence

Electrical Transport

Bunching and Immobilization of Ionic Liquids in Nanoporous Metal-Organic Framework · Kanj A.B., Verma R., Liu M. et al. · Nano Letters · 2019 · 2114-2120

2 measurement groups · 9 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Impedance spectroscopy using Zurich Instruments MFIA; Randles-circuit fits where applicable

[BMIM][NTf2]-loaded HKUST-1 SURMOF thin films · Thin Film

Frequency 5 MHz to 0.5 Hz; two-probe interdigitated gold electrodes; 10 um conduction distance; pure argon purge 10 mL min^-1; room temperature.

Temperature
298
Atmosphere
Pure argon purge, 10 mL min^-1
Geometry
Interdigitated gold electrodes; 10 um gap, total gap length 1.68 m; electric field about 0.1 V um^-1
Context
guest-loaded target with empty HKUST-1 control
Measurement source
2119 · Methods - Measurement of Electric Conduction Properties · Figures 2 and 3
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Molar conductivity at maximum pore loadingabout (0.07 +/- 0.04) nS m2 mol^-1+/- 0.04Text
Approximate
2116 · Results and Discussion · Figure 3a
Molar conductivity at 95% pore loading(0.7 +/- 0.4) nS m2 mol^-1+/- 0.4Text
Exact Reported
2116 · Results and Discussion · Figure 3a
Literature molar conductivity of pure bulk [BMIM][NTf2]~1.0 x 10^-4 S m2 mol^-1 at room temperature100000 nS m^2 mol^-1Text
Approximate
2116 · Results and Discussion · Figure 3a discussion
Conductivity upper limit of empty HKUST-1 MOFMarked as a best value within this paper<5 x 10^-11 S m^-1upper limitText
Approximate
2115 · Results and Discussion · Figure 2
Estimated ohmic resistance of empty HKUST-1 MOF10^12 ohmconservative estimateText
Approximate
2115 · Results and Discussion · Figure 2
Molar conductivity at low pore loadingMarked as a best value within this paper(45 +/- 20) nS m2 mol^-1 at 20% IL pore loading and less+/- 20Text
Exact Reported
2116 · Results and Discussion · Figure 3a

Resistance extracted from impedance spectra versus IL filling

[BMIM][NTf2]-loaded HKUST-1 SURMOF thin films · Thin Film

Average resistance values with standard deviations from two samples and three loading cycles.

Temperature
298
Atmosphere
Pure argon purge during impedance measurements
Geometry
Interdigitated gold electrodes
Context
guest-loaded target with empty control
Measurement source
SI p005 · Supporting Information 5 · Figure SI5
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Resistance at 0% IL filling~1 x 10^6 Mohm from Figure SI51000000000000 ohmFigure Axis
Approximate
SI p005 · Supporting Information 5 · Figure SI5
Resistance at 100% IL filling~200 Mohm from Figure SI5200000000 ohmFigure Axis
Approximate
SI p005 · Supporting Information 5 · Figure SI5
Minimum resistance around 32% IL fillingMarked as a best value within this paper~1.8 Mohm from Figure SI51800000 ohmFigure Axis
Approximate
SI p005 · Supporting Information 5 · Figure SI5