| compound 1 grain capacitance at 293 K | 12.53 | — | — | SI Table Exact Reported | 14 · Table S4 · Table S4 |
| compound 1 grain-boundary capacitance at 293 K | 0.6647 | — | — | SI Table Exact Reported | 14 · Table S4 · Table S4 |
| compound 1 grain resistance at 293 K | 2593 | — | — | SI Table Exact Reported | 14 · Table S4 · Table S4 |
| compound 1 grain-boundary resistance at 293 K | 0.455 | — | — | SI Table Exact Reported | 14 · Table S4 · Table S4 |
| compound 1 equivalent-circuit fitting goodness chi2 at 293 K | 0.0178 | — | — | SI Table Exact Reported | 14 · Table S4 · Table S4 |
| compound 1 grain capacitance at 303 K | 12.54 | — | — | SI Table Exact Reported | 14 · Table S4 · Table S4 |
| compound 1 grain-boundary capacitance at 303 K | 14.4 | — | — | SI Table Exact Reported | 14 · Table S4 · Table S4 |
| compound 1 grain resistance at 303 K | 841.2 | — | — | SI Table Exact Reported | 14 · Table S4 · Table S4 |
| compound 1 grain-boundary resistance at 303 K | 217.2 | — | — | SI Table Exact Reported | 14 · Table S4 · Table S4 |
| compound 1 equivalent-circuit fitting goodness chi2 at 303 K | 0.0788 | — | — | SI Table Exact Reported | 14 · Table S4 · Table S4 |
| compound 1 grain capacitance at 313 K | 12.5 | — | — | SI Table Exact Reported | 14 · Table S4 · Table S4 |
| compound 1 grain-boundary capacitance at 313 K | 17.19 | — | — | SI Table Exact Reported | 14 · Table S4 · Table S4 |
| compound 1 grain resistance at 313 K | 642.4 | — | — | SI Table Exact Reported | 14 · Table S4 · Table S4 |
| compound 1 grain-boundary resistance at 313 K | 640.2 | — | — | SI Table Exact Reported | 14 · Table S4 · Table S4 |
| compound 1 equivalent-circuit fitting goodness chi2 at 313 K | 0.221 | — | — | SI Table Exact Reported | 14 · Table S4 · Table S4 |
| compound 1 grain capacitance at 323 K | 13.91 | — | — | SI Table Exact Reported | 14 · Table S4 · Table S4 |
| compound 1 grain-boundary capacitance at 323 K | 0.158 | — | — | SI Table Exact Reported | 14 · Table S4 · Table S4 |
| compound 1 grain resistance at 323 K | 386 | — | — | SI Table Exact Reported | 14 · Table S4 · Table S4 |
| compound 1 grain-boundary resistance at 323 K | 2.124 | — | — | SI Table Exact Reported | 14 · Table S4 · Table S4 |
| compound 1 equivalent-circuit fitting goodness chi2 at 323 K | 0.194 | — | — | SI Table Exact Reported | 14 · Table S4 · Table S4 |
| compound 1 grain capacitance at 333 K | 20.51 | — | — | SI Table Exact Reported | 14 · Table S4 · Table S4 |
| compound 1 grain-boundary capacitance at 333 K | 31.82 | — | — | SI Table Exact Reported | 14 · Table S4 · Table S4 |
| compound 1 grain resistance at 333 K | 36.18 | — | — | SI Table Exact Reported | 14 · Table S4 · Table S4 |
| compound 1 grain-boundary resistance at 333 K | 15.53 | — | — | SI Table Exact Reported | 14 · Table S4 · Table S4 |
| compound 1 equivalent-circuit fitting goodness chi2 at 333 K | 0.267 | — | — | SI Table Exact Reported | 14 · Table S4 · Table S4 |
| compound 1 grain capacitance at 343 K | 150.3 | — | — | SI Table Exact Reported | 14 · Table S4 · Table S4 |
| compound 1 grain-boundary capacitance at 343 K | 13.66 | — | — | SI Table Exact Reported | 14 · Table S4 · Table S4 |
| compound 1 grain resistance at 343 K | 1.248 | — | — | SI Table Exact Reported | 14 · Table S4 · Table S4 |
| compound 1 grain-boundary resistance at 343 K | 1458 | — | — | SI Table Exact Reported | 14 · Table S4 · Table S4 |
| compound 1 equivalent-circuit fitting goodness chi2 at 343 K | 0.2663 | — | — | SI Table Exact Reported | 14 · Table S4 · Table S4 |
| compound 1 grain capacitance at 353 K | 23.22 | — | — | SI Table Exact Reported | 14 · Table S4 · Table S4 |
| compound 1 grain-boundary capacitance at 353 K | 26.73 | — | — | SI Table Exact Reported | 14 · Table S4 · Table S4 |
| compound 1 grain resistance at 353 K | 11.25 | — | — | SI Table Exact Reported | 14 · Table S4 · Table S4 |
| compound 1 grain-boundary resistance at 353 K | 11.52 | — | — | SI Table Exact Reported | 14 · Table S4 · Table S4 |
| compound 1 equivalent-circuit fitting goodness chi2 at 353 K | 0.289 | — | — | SI Table Exact Reported | 14 · Table S4 · Table S4 |
| compound 1 grain capacitance at 363 K | 25.94 | — | — | SI Table Exact Reported | 14 · Table S4 · Table S4 |
| compound 1 grain-boundary capacitance at 363 K | 23.91 | — | — | SI Table Exact Reported | 14 · Table S4 · Table S4 |
| compound 1 grain resistance at 363 K | 18.22 | — | — | SI Table Exact Reported | 14 · Table S4 · Table S4 |
| compound 1 grain-boundary resistance at 363 K | 17.86 | — | — | SI Table Exact Reported | 14 · Table S4 · Table S4 |
| compound 1 equivalent-circuit fitting goodness chi2 at 363 K | 0.254 | — | — | SI Table Exact Reported | 14 · Table S4 · Table S4 |
| compound 1 grain capacitance at 373 K | 22.83 | — | — | SI Table Exact Reported | 14 · Table S4 · Table S4 |
| compound 1 grain-boundary capacitance at 373 K | 27.37 | — | — | SI Table Exact Reported | 14 · Table S4 · Table S4 |
| compound 1 grain resistance at 373 K | 14.74 | — | — | SI Table Exact Reported | 14 · Table S4 · Table S4 |
| compound 1 grain-boundary resistance at 373 K | 13.51 | — | — | SI Table Exact Reported | 14 · Table S4 · Table S4 |
| compound 1 equivalent-circuit fitting goodness chi2 at 373 K | 0.235 | — | — | SI Table Exact Reported | 14 · Table S4 · Table S4 |
| impedance/conduction trend | dc conduction increases with temperature; semiconducting NTCR behaviour | — | — | Text Qualitative | 12 · Complex impedance study · Fig. 10 |
| CIS frequency range | 500 Hz-10 MHz | — | — | Text Exact Reported | 11 · Complex impedance study |
| CIS temperature range | 293-373 K | — | — | Text Exact Reported | 11 · Complex impedance study |