Electrical Transport — Double advantages of 2D coordination polymer of coumarinyl-pyridyl Schiff base decorated Zn(II): The fabrication of Schottky device and Anti-carcinogenic activity

3 measurement groups · 26 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

ITO/Zn(II)-CP/Al Schottky diode thin film · Thin Film

Series resistance, ideality factor and barrier height extracted from forward-bias diode analysis.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Schottky barrier height, dark	0.52 eV	—	—	Table Exact Reported	7 · 3.2 Opto-electrical property · Table 1
Schottky barrier height, light	0.51 eV	—	—	Table Exact Reported	7 · 3.2 Opto-electrical property · Table 1
ideality factor, dark	1.64	—	—	Table Exact Reported	7 · 3.2 Opto-electrical property · Table 1
ideality factor, lightMarked as a best value within this paper	0.99	—	—	Table Exact Reported	7 · 3.2 Opto-electrical property · Table 1
series resistance from dV/dlnI, dark	14.14 ohm	—	—	Table Exact Reported	7 · 3.2 Opto-electrical property · Table 1
series resistance from dV/dlnI, light	13.63 ohm	—	—	Table Exact Reported	7 · 3.2 Opto-electrical property · Table 1
series resistance from H(I), dark	14.35 ohm	—	—	Table Exact Reported	7 · 3.2 Opto-electrical property · Table 1
series resistance from H(I), light	13.67 ohm	—	—	Table Exact Reported	7 · 3.2 Opto-electrical property · Table 1

ITO/Zn(II)-CP/Al Schottky diode thin film · Thin Film

ITO/Zn(II)-CP/Al Schottky barrier diode; conductivity, rectification ratio and diode parameters extracted under dark/light conditions.

Geometry: ITO/Zn(II)-CP/Al sandwich; film thickness nearly 1 micrometre; effective diode area 7.065 x 10^-6 m2
Context: pristine framework thin-film device
Measurement source: 5 · 3.2 Opto-electrical property · Figure 4 and Table 1

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
electrical conductivity, dark	8.07 x 10^-3 S m^-1	0.00807 S m^-1	—	Table Exact Reported	7 · 3.2 Opto-electrical property · Table 1
electrical conductivity, lightMarked as a best value within this paper	9.26 x 10^-3 S m^-1	0.00926 S m^-1	—	Table Exact Reported	7 · 3.2 Opto-electrical property · Table 1
conductivity enhancement under light	enhanced by about 15%	—	—	Text Approximate	4 · 3.2 Opto-electrical property
effective diode area	7.065 x 10^-6 m2	—	—	Text Exact Reported	Fabrication and characterization of ITO/Compound/Al based Schottky Barrier Diode
transport-film thickness	nearly one micrometer	0.000001 m	—	Text Approximate	Fabrication and characterization of ITO/Compound/Al based Schottky Barrier Diode
ln I versus ln V slope, region I	approximately 1	—	—	Text Approximate	5 · 3.2 Opto-electrical property · Figure 5
ln I versus ln V slope, region II	approximately 2	—	—	Text Approximate	5-6 · 3.2 Opto-electrical property · Figure 5
rectification ratio at +/-1 V, dark	17.65	—	—	Table Exact Reported	7 · 3.2 Opto-electrical property · Table 1
rectification ratio at +/-1 V, lightMarked as a best value within this paper	19.22	—	—	Table Exact Reported	7 · 3.2 Opto-electrical property · Table 1

ITO/Zn(II)-CP/Al Schottky diode thin film · Thin Film

Region II SCLC parameters calculated with Mott-Gurney equation; dielectric constant from capacitance versus log frequency.

Geometry: ITO/Zn(II)-CP/Al sandwich Schottky diode
Context: pristine framework thin-film device
Measurement source: 6-8 · 3.2 Opto-electrical property · Figures 7-8 and Table 2

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
carrier concentration, darkMarked as a best value within this paper	1.03 x 10^20 m^-3	—	—	Table Exact Reported	8 · 3.2 Opto-electrical property · Table 2
carrier concentration, light	1.01 x 10^20 m^-3	—	—	Table Exact Reported	8 · 3.2 Opto-electrical property · Table 2
density of states, dark	7.45 x 10^21 m^-3	—	—	Table Exact Reported	8 · 3.2 Opto-electrical property · Table 2
density of states, lightMarked as a best value within this paper	9.36 x 10^21 m^-3	—	—	Table Exact Reported	8 · 3.2 Opto-electrical property · Table 2
relative dielectric constant	epsilon_r = 1.08	—	—	Text Exact Reported	6 · 3.2 Opto-electrical property · Figure 8
SCLC mobility, dark	8.08 x 10^-4 m2 V^-1 s^-1	—	—	Table Exact Reported	8 · 3.2 Opto-electrical property · Table 2
SCLC mobility, lightMarked as a best value within this paper	8.82 x 10^-4 m2 V^-1 s^-1	—	—	Table Exact Reported	8 · 3.2 Opto-electrical property · Table 2
reported time of flight, dark	7.95 A	—	—	Table Exact Reported	8 · 3.2 Opto-electrical property · Table 2
reported time of flight, light	7.24 A	—	—	Table Exact Reported	8 · 3.2 Opto-electrical property · Table 2