Li M., Wang J., Jiang A. et al. · Solar Energy · 2019 · 380-385
Open a family to keep every result attached to its sample, method and conditions.
Paraphrased for this database from the authors’ stated interpretations — never quoted verbatim — and kept separate from reported measurements.
The 4 mg mL-1 In10 loading optimises the balance between improved conductivity/charge extraction and morphology; 6 mg mL-1 causes agglomeration and poorer device performance.
Caveat: Cross-sectional SEM and numerical EIS values are available from rendered SI, but Fig. S5 CV curve body remains unavailable locally.
4 · 3. Results and discussion · Fig. 3; Table 1 · Linked to 7 structured results
Rendered SI pages resolve the previously missing Table S1 crystal data and Table S2 EIS numerical values, but the Figure S5 CV plot body is not visible in the local rendered/text layer.
Caveat: Do not extract HTM/HTM-In10 CV curve values from Figure S5 until a complete source figure or raw data file is available.
S-5 to S-6 · Supporting Information · Figure S5; Table S1; Table S2 · Linked to 3 structured results
In10 improves PSC light response through UV absorption, visible photoluminescence and enhanced scattering, contributing to improved IPCE and SPS response.
Caveat: The optical mechanism is supported by spectra and trends but not isolated quantitatively from conductivity effects.
5 · 4. Conclusions · Fig. 2; Fig. 5 · Linked to 4 structured results
The In10 and Spiro-OMeTAD frontier levels are well aligned, with no large HOMO barrier, supporting incorporation of In10 into the hole transport material.
Caveat: Energy levels are reported/calculated, but direct charge mobility or absolute conductivity of In10 is not measured.
2 · 3. Results and discussion · Fig. 1b · Linked to 2 structured results
In10 oxidises Spiro-OMeTAD to Spiro-OMeTAD+, causing the 520 nm absorption increase and improving hole-transport-layer conductivity.
Caveat: No absolute conductivity value or independent Spiro-OMeTAD+ concentration is reported.
5 · 4. Conclusions · Fig. 1c,d · Linked to 2 structured results
Names and aliases are kept exactly within the paper’s own identity model.
| Material | Composition | Structure context | Source |
|---|---|---|---|
| In10-doped Spiro-OMeTAD hole transport layer | Spiro-OMeTAD/TBP/Li-TFSI with 2, 4 or 6 mg mL-1 In10In(III) and K(I) nodes in dispersed In10 MOF component · quinoline-3-dicarboxylate in In10 plus molecular Spiro-OMeTAD matrix | unknown · CompositeComposite hole-transport layer; In10 addition oxidises Spiro-OMeTAD and changes conductivity, optical response and morphology. | 2 · 2.2. Device fabrication |
| In10 metal-organic framework | [In0.5K(3-qlc)Cl1.5(H2O)0.5]2n; SI empirical formula C20H14Cl3In2K2N2O5In(III) and K(I) · quinoline-3-dicarboxylate / 3-qlc from quinoline-3-dicarboxylic acid | 3D · PristineLarge 3D conjugated network through In(III), K(I) and 3qlc-; SI Table S1 assigns tetragonal P43212 crystal data for In10. | 1 · Abstract |
| Spiro-OMeTAD hole transport material | 2,2',7,7'-tetrakis(N,N-di-p-methoxyphenylamine)-9,9'-spirobifluorene with TBP and Li-TFSI additives | 0D · Model SystemMolecular organic hole transport material control, not a MOF. | 2 · 2.2. Device fabrication |
Sample form, processing state and composition status define the context for measurements.
| Sample | Form and role | Processing and geometry | Source |
|---|---|---|---|
| HTM control film without In10research_0488__mat__spiro_ometad_htm | Thin Film · Pristine Control · Doped | Spiro-OMeTAD/TBP/Li-TFSI in chlorobenzene stirred 24 h and spin coated at 4000 rpm for 20 s.Perovskite layer for device fabrication; substrate for standalone conductivity film not specified | 2 · 2.2. Device fabrication |
| HTM/In10-2 filmresearch_0488__mat__htm_in10_composite | Thin Film · Composite Sample · Composite | HTM solution containing 2 mg mL-1 In10; spin coated at 4000 rpm for 20 s in the device process.Perovskite layer for device fabrication; substrate for standalone conductivity film not specified | 2 · 3. Results and discussion · Fig. 1 |
| HTM/In10-4 filmresearch_0488__mat__htm_in10_composite | Thin Film · Target Sample · Composite | HTM solution containing 4 mg mL-1 In10; spin coated at 4000 rpm for 20 s in the device process.Perovskite layer for device fabrication; substrate for standalone conductivity film not specified | 4 · 3. Results and discussion · Table 1 |
| HTM/In10-6 filmresearch_0488__mat__htm_in10_composite | Thin Film · Composite Sample · Composite | HTM solution containing 6 mg mL-1 In10; spin coated at 4000 rpm for 20 s in the device process.Perovskite layer for device fabrication; substrate for standalone conductivity film not specified | 4 · 3. Results and discussion · Fig. 3 |
| Synthesised In10 MOF powderresearch_0488__mat__in10_mof | Powder · Target Sample · Pristine Framework | White precipitate generated after solvothermal synthesis, washed with water and dried at room temperature. | 2 · 2.1. Synthesis of In10 |
| PSC with HTM controlresearch_0488__mat__spiro_ometad_htm | Electrode · Pristine Control · Composite | Perovskite solar cell using the no-In10 HTM layer.FTO/TiO2/perovskite/HTM/Au device stack · Au 70-80 nm | 4 · 3. Results and discussion · Table 1 |
| PSC with HTM/In10-2research_0488__mat__htm_in10_composite | Electrode · Composite Sample · Composite | Perovskite solar cell using HTM with 2 mg mL-1 In10.FTO/TiO2/perovskite/HTM-In10/Au device stack · Au 70-80 nm | 4 · 3. Results and discussion · Table 1 |
| PSC with HTM/In10-4research_0488__mat__htm_in10_composite | Electrode · Target Sample · Composite | Perovskite solar cell using HTM with 4 mg mL-1 In10.FTO/TiO2/perovskite/HTM-In10/Au device stack · Au 70-80 nm | 4 · 3. Results and discussion · Table 1 |
| PSC with HTM/In10-6research_0488__mat__htm_in10_composite | Electrode · Composite Sample · Composite | Perovskite solar cell using HTM with 6 mg mL-1 In10.FTO/TiO2/perovskite/HTM-In10/Au device stack · Au 70-80 nm | 4 · 3. Results and discussion · Table 1 |