Electrical Transport — Structure-directing effect of terephthalate in bridging Zn(ii)- and Cd(ii)-based coordination polymers towards application in the detection of trace quantities of Pd2+ in aqueous media and their electrical conductivities

Measurement evidence

Electrical Transport

Structure-directing effect of terephthalate in bridging Zn(ii)- and Cd(ii)-based coordination polymers towards application in the detection of trace quantities of Pd2+ in aqueous media and their electrical conductivities · Saha K., Dutta B., Das P. et al. · Dalton Transactions · 2025 · 3346-3361

4 measurement groups · 28 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Two-probe current-voltage and Schottky diode analysis

Electrical conductivity

ITO/CP1/Al Schottky diode · Thin Film

ITO/CP1/Al measured using Keithley 2635B at room temperature (303 K), applied bias +/-1 V under dark conditions; Al deposited at 10^-6 Torr through shadow mask.

Temperature: 303
Atmosphere: dark, ambient measurement after vacuum-deposited Al
Geometry: ITO/CP1/Al metal-semiconductor junction; effective area 7.065 x 10^-6 m2; film thickness about 1 um
Context: pristine CP1 thin film device
Measurement source: 31-32 · Fabrication and Characterization of the device · Figure S30

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Schottky barrier height	0.638 eV	—	—	Table Exact Reported	11 · Electrical characterization · Table 2
electrical conductivity	1.285e-04 S m-1	—	—	Table Exact Reported	11 · Electrical characterization · Table 2
ideality factor	1.844	—	—	Table Exact Reported	11 · Electrical characterization · Table 2
I-V nonlinearity / Schottky behaviour	nonlinear I-V confirms Schottky barrier	—	—	Text Qualitative	10 · Electrical characterization · Fig. 10
rectification ratio	55.482	—	—	Table Exact Reported	11 · Electrical characterization · Table 2
series resistance from dV/dlnI	681.307 ohm	—	—	Table Exact Reported	11 · Electrical characterization · Table 2
series resistance from H(I)	685.414 ohm	—	—	Table Exact Reported	11 · Electrical characterization · Table 2
Tauc optical bandgap from thin-film device	3.63 eV	—	—	Text Exact Reported	10 · Electrical characterization · Fig. S31b
valence band to Fermi-level separation	around 1.07 eV	—	—	Text Approximate	10 · Electrical characterization · Fig. S31a

SCLC, capacitance-frequency and impedance spectroscopy

Space-charge-limited current analysis Impedance spectroscopy

ITO/CP1/Al Schottky diode · Thin Film

Effective mobility from I versus V^2 Mott-Gurney analysis; dielectric constant from capacitance versus log frequency; impedance spectroscopy at 100 mV bias.

Temperature: 303
Geometry: ITO/CP1/Al
Context: pristine CP1 thin film device
Measurement source: 12-13 · Electrical characterization · Fig. 13-Fig. 16/Table 3

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
carrier concentration	2.04 x 10^19 /m3	—	—	Table Exact Reported	12 · Electrical characterization · Table 3
carrier lifetime	6.422 ns	—	—	Table Exact Reported	12 · Electrical characterization · Table 3
relative dielectric constant	0.3	—	—	Text Exact Reported	12 · Electrical characterization · Fig. 14
low-frequency impedance trend	CP1-based device very high and fluctuating at low frequency compared with CP2	—	—	Text Qualitative	13 · Electrical characterization · Fig. 16
effective mobility	1.492 x 10^-4 m2 V-1 s-1	—	—	Table Exact Reported	12 · Electrical characterization · Table 3

Two-probe current-voltage and Schottky diode analysis

Electrical conductivity

ITO/CP2/Al Schottky diode · Thin Film

ITO/CP2/Al measured using Keithley 2635B at room temperature (303 K), applied bias +/-1 V under dark conditions; Al deposited at 10^-6 Torr through shadow mask.

Temperature: 303
Atmosphere: dark, ambient measurement after vacuum-deposited Al
Geometry: ITO/CP2/Al metal-semiconductor junction; effective area 7.065 x 10^-6 m2; film thickness about 1 um
Context: pristine CP2 thin film device
Measurement source: 31-32 · Fabrication and Characterization of the device · Figure S30

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Schottky barrier height	0.621 eV	—	—	Table Exact Reported	11 · Electrical characterization · Table 2
electrical conductivityMarked as a best value within this paper	2.399e-04 S m-1	—	—	Table Exact Reported	11 · Electrical characterization · Table 2
ideality factor	1.387	—	—	Table Exact Reported	11 · Electrical characterization · Table 2
I-V nonlinearity / Schottky behaviour	nonlinear I-V confirms Schottky barrier	—	—	Text Qualitative	10 · Electrical characterization · Fig. 10
rectification ratio	59.968	—	—	Table Exact Reported	11 · Electrical characterization · Table 2
series resistance from dV/dlnI	388.547 ohm	—	—	Table Exact Reported	11 · Electrical characterization · Table 2
series resistance from H(I)	394.708 ohm	—	—	Table Exact Reported	11 · Electrical characterization · Table 2
Tauc optical bandgap from thin-film device	3.55 eV	—	—	Text Exact Reported	10 · Electrical characterization · Fig. S32b
valence band to Fermi-level separation	around 1.20 eV	—	—	Text Approximate	10 · Electrical characterization · Fig. S32a

SCLC, capacitance-frequency and impedance spectroscopy

Space-charge-limited current analysis Impedance spectroscopy

ITO/CP2/Al Schottky diode · Thin Film

Effective mobility from I versus V^2 Mott-Gurney analysis; dielectric constant from capacitance versus log frequency; impedance spectroscopy at 100 mV bias.

Temperature: 303
Geometry: ITO/CP2/Al
Context: pristine CP2 thin film device
Measurement source: 12-13 · Electrical characterization · Fig. 13-Fig. 16/Table 3

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
carrier concentration	8.541 x 10^18 /m3	—	—	Table Exact Reported	12 · Electrical characterization · Table 3
carrier lifetime	0.891 ns	—	—	Table Exact Reported	12 · Electrical characterization · Table 3
relative dielectric constant	0.11	—	—	Text Exact Reported	12 · Electrical characterization · Fig. 14
Nyquist semicircle/resistance trend	CP2 semicircle diameter significantly lower than CP1	—	—	Text Qualitative	13 · Electrical characterization · Fig. 15
effective mobilityMarked as a best value within this paper	9.443 x 10^-4 m2 V-1 s-1	—	—	Table Exact Reported	12 · Electrical characterization · Table 3