Electrical Transport — Synthesis and structural characterization of a Cu(II)-based 1D coordination polymer and its application in Schottky devices

4 measurement groups · 14 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

ITO/compound 1/Al Schottky device thin film · Thin Film

Capacitance versus frequency plot used to obtain saturation capacitance for dielectric constant/carrier calculations.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
saturation capacitanceMarked as a best value within this paper	6.69 x 10^-11 F	—	—	Text Exact Reported	p005 · Electrical characterization · Fig. 9

ITO/compound 1/Al Schottky device thin film · Thin Film

dV/dlnI versus I and H versus I plots from forward I-V data.

Geometry: ITO/compound 1/Al Schottky junction
Context: pristine compound 1 thin film device
Measurement source: p004 · Electrical characterization · Fig. 5; Fig. 6; Table 1

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Schottky barrier heightMarked as a best value within this paper	0.46	—	—	Table Exact Reported	p005 · Electrical characterization · Table 1
ideality factorMarked as a best value within this paper	0.6	—	—	Table Exact Reported	p005 · Electrical characterization · Table 1
series resistance from dV/dlnI versus I	101	—	—	Table Exact Reported	p005 · Electrical characterization · Table 1
series resistance from H versus I	138	—	—	Table Exact Reported	p005 · Electrical characterization · Table 1

ITO/compound 1/Al Schottky device thin film · Thin Film

Keithley 2400 source meter; +/-1 V range; ITO/Material/Al sandwiched Schottky structure.

Geometry: ITO/compound 1/Al sandwich; effective diode area 7.065 x 10^-6 m^2
Context: pristine compound 1 thin film device
Measurement source: p002-p004 · Device fabrication and characterization; Electrical characterization · Fig. 4; Table 1

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
thin-film conductivityMarked as a best value within this paper	6.13 x 10^-6 S cm^-1	0.000613 S m^-1	—	Table Exact Reported	p004-p005 · Electrical characterization · Table 1
forward current at +1 V from I-V plot	approximately 2.2 x 10^-2 A at +1 V	—	—	Figure Axis Approximate	p004 · Electrical characterization · Fig. 4
rectification ratio / on-off ratio	10	—	—	Table Exact Reported	p003-p005 · Electrical characterization · Fig. 4; Table 1

ITO/compound 1/Al Schottky device thin film · Thin Film

Forward I-V curve analysed using log I versus log V and I versus V^2 plots; film thickness taken as 1 um.

Geometry: ITO/compound 1/Al thin-film device
Context: pristine compound 1 thin film device
Measurement source: p004-p005 · Electrical characterization · Fig. 7; Fig. 8; Table 1

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
carrier concentrationMarked as a best value within this paper	4.63 x 10^19 m^-3	—	—	Table Exact Reported	p005 · Electrical characterization · Table 1
carrier lifetimeMarked as a best value within this paper	6.05 x 10^-8 s	—	—	Table Exact Reported	p005 · Electrical characterization · Table 1
diffusion coefficientMarked as a best value within this paper	8.71 x 10^-6 m^2 s^-1	—	—	Table Exact Reported	p005 · Electrical characterization · Table 1
diffusion lengthMarked as a best value within this paper	1.02 um	0.00000102 m	—	Table Exact Reported	p005 · Electrical characterization · Table 1
film thickness used for SCLC calculation	1 um	0.000001 m	—	Text Exact Reported	p005 · Electrical characterization
effective carrier mobilityMarked as a best value within this paper	3.36 x 10^-4 m^2 V^-1 s^-1	3.36 cm^2 V^-1 s^-1	—	Table Exact Reported	p005 · Electrical characterization · Table 1; Fig. 8