Synthesis evidence

Synthesis and structural characterization of a Cu(II)-based 1D coordination polymer and its application in Schottky devices

Ahmed F., Halder S., Dutta B. et al. · New Journal of Chemistry · 2017 · 11317-11323

2 structured synthesis routes

Completeness describes how fully the route could be reconstructed from the main article and supporting information.

Partial recipeSource: Main

Route 1: Liquid Liquid Interface

p002 · Synthesis of compound 1

Metal precursorsCu(NO3)2.3H2O (0.048 g, 0.2 mmol) in H2O (2 mL)
Linker precursors4-phpy (0.031 g, 0.2 mmol) in MeOH (2 mL); H2fum (0.023 g, 0.2 mmol) neutralised with Et3N (0.021 g, 0.2 mmol) in EtOH (2 mL)
SolventsMeOH, H2O, 1:1 MeOH/H2O buffer solution, EtOH
AdditivesEt3N base
Atmospherenot stated
Temperaturenot stated
Time72
Work-upBlock-shaped blue crystals isolated; no washing/drying procedure stated.
Activationnot stated
Scalability contextSmall-batch layered crystal growth; 0.071 g product, 70% yield.
Show 7 structured reagent records
RoleReagentAmount / concentrationSource
Metal SourceCu(NO3)2.3H2O0.048 g, 0.2 mmolp002 · Synthesis of compound 1
Linker4-phpy0.031 g, 0.2 mmolp002 · Synthesis of compound 1
LinkerH2fum0.023 g, 0.2 mmolp002 · Synthesis of compound 1
BaseEt3N0.021 g, 0.2 mmolp002 · Synthesis of compound 1
SolventMeOH2 mL for 4-phpy plus 1 mL equivalent in 2 mL 1:1 MeOH/H2O bufferp002 · Synthesis of compound 1
SolventH2O2 mL for Cu salt plus 1 mL equivalent in 2 mL 1:1 MeOH/H2O bufferp002 · Synthesis of compound 1
SolventEtOH2 mLp002 · Synthesis of compound 1
Partial recipeSource: Main

Route 2: Other

p002 · Device fabrication and characterization

Metal precursorspre-synthesised compound 1
Solventswell-dispersed solution solvent not stated for spin coating
Atmospherevacuum drying; deposition atmosphere not stated
Temperature90
Time0.033 for spin coating; drying time not stated
Substrate orientationITO-coated glass
Work-upITO cleaned by ultrasonication in ethanol, acetone and distilled water for 15 min, dried, spin-coated at 400 rpm for 2 min, vacuum dried at 90 C, Al electrodes deposited.
Activationvacuum oven drying at 90 C
Scalability contextDevice thin-film preparation; solution concentration, film thickness from fabrication, and drying duration are not fully specified.
Show 5 structured reagent records
RoleReagentAmount / concentrationSource
Othercompound 1not statedp002 · Device fabrication and characterization
Solventethanolused for ITO ultrasonic cleaning, 15 minp002 · Device fabrication and characterization
Solventacetoneused for ITO ultrasonic cleaning, 15 minp002 · Device fabrication and characterization
Solventdistilled waterused for ITO ultrasonic cleaning, 15 minp002 · Device fabrication and characterization
OtherAl electrodenot statedp002 · Device fabrication and characterization