Two- or four-contact direct-current electrical conductivity/resistivity measurement
Ten contacted single crystals of compound 1 · Single Crystal
Ten single crystals measured from 400 to 2 K in Quantum Design PPMS-9 with Keithley 2400 source-meter and Keithley 6514 electrometer; 25 um Pt wires attached with graphite paste; 10 or 20 V constant voltage; 1 K/min cooling/warming cycles.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| semiconducting activation energy reported in abstractMarked as a best value within this paper | about 290 meV | — | — | Text Approximate | 1 · Abstract |
| post-transition semiconducting activation energy | about 300 meV | — | — | Text Approximate | 5 · Results and Discussion - Electrical Properties · Figure 4 |
| lower end of 300 K conductivity range | about 10^-6 S cm^-1 | — | — | Text Approximate | 5 · Results and Discussion - Electrical Properties · Figure S2 cited |
| upper end of 300 K conductivity rangeMarked as a best value within this paper | about 10^-5 S cm^-1 | — | — | Text Approximate | 5 · Results and Discussion - Electrical Properties · Figure S2 cited |
| conductivity after first-cooling transitionMarked as a best value within this paper | about 5 x 10^-5 S cm^-1 | — | — | Text Approximate | 5 · Results and Discussion - Electrical Properties · Figure 4 |
| nominal first-cooling conductivity change factor | factor of 2; can be as high as 2 orders of magnitude depending on crystal | — | — | Text Approximate | 5 · Results and Discussion - Electrical Properties · Figure 4; Figures S3-S5 cited |
| first-cooling metallic-like transition lower temperature | about 280 K | — | — | Text Approximate | 5 · Results and Discussion - Electrical Properties · Figure 4 |
| first-cooling metallic-like transition upper temperature | about 310 K | — | — | Text Approximate | 5 · Results and Discussion - Electrical Properties · Figure 4 |
| high-temperature transition hysteresisMarked as a best value within this paper | about 30 K | — | — | Text Approximate | 5 · Results and Discussion - Electrical Properties · Figure 4b |
| high-temperature bistability transition lower boundMarked as a best value within this paper | 350 K | — | — | Text Range | 1 · Abstract · Figure 4b |
| high-temperature resistivity jump magnitude | about 2 orders of magnitude | — | — | Text Approximate | 5 · Results and Discussion - Electrical Properties · Figure 4 |
| high-temperature bistability transition upper boundMarked as a best value within this paper | 380 K | — | — | Text Range | 1 · Abstract · Figure 4b |
| low-temperature resistance detection limit | above 5 x 10^11 ohm | — | — | Text Rounded Reported | 5 · Results and Discussion - Electrical Properties · Figure 4 |
| room-temperature transition hysteresisMarked as a best value within this paper | about 60 K | — | — | Text Approximate | 1 · Abstract |
| room-temperature bistability transition lower boundMarked as a best value within this paper | 260 K | — | — | Text Range | 1 · Abstract |
| room-temperature bistability transition upper boundMarked as a best value within this paper | 320 K | — | — | Text Range | 1 · Abstract |