Electrical Transport — Insight into charge transportation in cadmium based semiconducting organic-inorganic hybrid materials and their application in the fabrication of photosensitive Schottky devices

5 measurement groups · 50 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

I-V characteristics; thermionic emission theory; Cheung's method

Electrical conductivity

CD1, complex 1 based Schottky device · Thin Film

Applied bias sequentially within +/-2 V under dark and photo-irradiation (approximately 100 mW cm^-2); Schottky parameters extracted from I-V, dV/dlnI vs I, and H(I) vs I.

Temperature: 299
Atmosphere: nitrogen-filled glove box
Geometry: ITO/active material/Al sandwich structure; active area 7.065 x 10^-2 cm^-2
Context: pristine complex 1 device
Measurement source: SI PDF p11-p12 / rendered p011-p012 · Device Fabrication; Electrical Characterization · Equations S2-S6

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
CD1 Schottky barrier height (dark)	0.52	—	—	Table Exact Reported	PDF p8 / article p5728 · Electrical characterization · Table 1
CD1 conductivity (dark)	0.000389 S m^-1	—	—	Table Exact Reported	PDF p8 / article p5728 · Electrical characterization · Table 1
CD1 ideality factor (dark)	2.91	—	—	Table Exact Reported	PDF p8 / article p5728 · Electrical characterization · Table 1
CD1 rectification ratio at +/-2 V (dark)	24.85	—	—	Table Exact Reported	PDF p8 / article p5728 · Electrical characterization · Table 1
CD1 series resistance from dV/dlnI (dark)	1652.02	—	—	Table Exact Reported	PDF p8 / article p5728 · Electrical characterization · Table 1
CD1 series resistance from H(I) (dark)	1670.47	—	—	Table Exact Reported	PDF p8 / article p5728 · Electrical characterization · Table 1
CD1 Schottky barrier height (light)	0.41	—	—	Table Exact Reported	PDF p8 / article p5728 · Electrical characterization · Table 1
CD1 conductivity (light)Marked as a best value within this paper	0.000825 S m^-1	—	—	Table Exact Reported	PDF p8 / article p5728 · Electrical characterization · Table 1
CD1 ideality factor (light)	2.21	—	—	Table Exact Reported	PDF p8 / article p5728 · Electrical characterization · Table 1
CD1 rectification ratio at +/-2 V (light)	78.21	—	—	Table Exact Reported	PDF p8 / article p5728 · Electrical characterization · Table 1
CD1 series resistance from dV/dlnI (light)	667.09	—	—	Table Exact Reported	PDF p8 / article p5728 · Electrical characterization · Table 1
CD1 series resistance from H(I) (light)	675.54	—	—	Table Exact Reported	PDF p8 / article p5728 · Electrical characterization · Table 1
CD1 photosensitivityMarked as a best value within this paper	2.29	—	—	Table Exact Reported	PDF p8 / article p5728 · Electrical characterization · Table 1

space-charge-limited-current analysis using Mott-Gurney equation

Space-charge-limited current analysis

CD1, complex 1 based Schottky device · Thin Film

Log(I) vs log(V) curves used to identify Ohmic region I and SCLC region II; effective mobility, transit time, diffusion coefficient and diffusion length estimated under dark and light.

Temperature: 299
Atmosphere: nitrogen-filled glove box
Geometry: ITO/complex/Al sandwich device; film thickness considered as ~1 micrometre for dielectric permittivity calculation
Context: pristine complex 1 device
Measurement source: SI PDF p12-p13 / rendered p012-p013 · Electrical Characterization · Equation S7; Fig. S6

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
CD1 relative dielectric constant	0.0487	—	—	Table Exact Reported	PDF p9 / article p5729 · Electrical characterization · Table 2
CD1 diffusion coefficient D (dark)	0.000113	—	—	Table Exact Reported	PDF p9 / article p5729 · Electrical characterization · Table 2
CD1 diffusion length (dark)	1.24e-07	—	—	Table Exact Reported	PDF p9 / article p5729 · Electrical characterization · Table 2
CD1 effective carrier mobility (dark)	0.00437	—	—	Table Exact Reported	PDF p9 / article p5729 · Electrical characterization · Table 2
CD1 mobility-transit-time product (dark)	2.97e-13	—	—	Table Exact Reported	PDF p9 / article p5729 · Electrical characterization · Table 2
CD1 transit time (dark)	6.81e-11	—	—	Table Exact Reported	PDF p9 / article p5729 · Electrical characterization · Table 2
CD1 diffusion coefficient D (light)	0.000248	—	—	Table Exact Reported	PDF p9 / article p5729 · Electrical characterization · Table 2
CD1 diffusion length (light)	1.39e-07	—	—	Table Exact Reported	PDF p9 / article p5729 · Electrical characterization · Table 2
CD1 effective carrier mobility (light)Marked as a best value within this paper	0.00963	—	—	Table Exact Reported	PDF p9 / article p5729 · Electrical characterization · Table 2
CD1 mobility-transit-time product (light)	3.74e-13	—	—	Table Exact Reported	PDF p9 / article p5729 · Electrical characterization · Table 2
CD1 transit time (light)	3.88e-11	—	—	Table Exact Reported	PDF p9 / article p5729 · Electrical characterization · Table 2

I-V characteristics; thermionic emission theory; Cheung's method

Electrical conductivity

CD2, complex 2 based Schottky device · Thin Film

Applied bias sequentially within +/-2 V under dark and photo-irradiation (approximately 100 mW cm^-2); Schottky parameters extracted from I-V, dV/dlnI vs I, and H(I) vs I.

Temperature: 299
Atmosphere: nitrogen-filled glove box
Geometry: ITO/active material/Al sandwich structure; active area 7.065 x 10^-2 cm^-2
Context: pristine complex 2 device
Measurement source: SI PDF p11-p12 / rendered p011-p012 · Device Fabrication; Electrical Characterization · Equations S2-S6

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
CD2 Schottky barrier height (dark)	0.55	—	—	Table Exact Reported	PDF p8 / article p5728 · Electrical characterization · Table 1
CD2 conductivity (dark)	0.000181 S m^-1	—	—	Table Exact Reported	PDF p8 / article p5728 · Electrical characterization · Table 1
CD2 ideality factor (dark)	3.24	—	—	Table Exact Reported	PDF p8 / article p5728 · Electrical characterization · Table 1
CD2 rectification ratio at +/-2 V (dark)	23.52	—	—	Table Exact Reported	PDF p8 / article p5728 · Electrical characterization · Table 1
CD2 series resistance from dV/dlnI (dark)	1795.86	—	—	Table Exact Reported	PDF p8 / article p5728 · Electrical characterization · Table 1
CD2 series resistance from H(I) (dark)	1810.65	—	—	Table Exact Reported	PDF p8 / article p5728 · Electrical characterization · Table 1
CD2 Schottky barrier height (light)	0.43	—	—	Table Exact Reported	PDF p8 / article p5728 · Electrical characterization · Table 1
CD2 conductivity (light)	0.000472 S m^-1	—	—	Table Exact Reported	PDF p8 / article p5728 · Electrical characterization · Table 1
CD2 ideality factor (light)	2.39	—	—	Table Exact Reported	PDF p8 / article p5728 · Electrical characterization · Table 1
CD2 rectification ratio at +/-2 V (light)	46.67	—	—	Table Exact Reported	PDF p8 / article p5728 · Electrical characterization · Table 1
CD2 series resistance from dV/dlnI (light)	781.93	—	—	Table Exact Reported	PDF p8 / article p5728 · Electrical characterization · Table 1
CD2 series resistance from H(I) (light)	810.04	—	—	Table Exact Reported	PDF p8 / article p5728 · Electrical characterization · Table 1
CD2 photosensitivity	2.11	—	—	Table Exact Reported	PDF p8 / article p5728 · Electrical characterization · Table 1

space-charge-limited-current analysis using Mott-Gurney equation

Space-charge-limited current analysis

CD2, complex 2 based Schottky device · Thin Film

Log(I) vs log(V) curves used to identify Ohmic region I and SCLC region II; effective mobility, transit time, diffusion coefficient and diffusion length estimated under dark and light.

Temperature: 299
Atmosphere: nitrogen-filled glove box
Geometry: ITO/complex/Al sandwich device; film thickness considered as ~1 micrometre for dielectric permittivity calculation
Context: pristine complex 2 device
Measurement source: SI PDF p12-p13 / rendered p012-p013 · Electrical Characterization · Equation S7; Fig. S6

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
CD2 relative dielectric constant	0.0663	—	—	Table Exact Reported	PDF p9 / article p5729 · Electrical characterization · Table 2
CD2 diffusion coefficient D (dark)	6.24e-05	—	—	Table Exact Reported	PDF p9 / article p5729 · Electrical characterization · Table 2
CD2 diffusion length (dark)	1.22e-07	—	—	Table Exact Reported	PDF p9 / article p5729 · Electrical characterization · Table 2
CD2 effective carrier mobility (dark)	0.00242	—	—	Table Exact Reported	PDF p9 / article p5729 · Electrical characterization · Table 2
CD2 mobility-transit-time product (dark)	2.92e-13	—	—	Table Exact Reported	PDF p9 / article p5729 · Electrical characterization · Table 2
CD2 transit time (dark)	12.09 x 10^-11 s	—	—	Table Exact Reported	PDF p9 / article p5729 · Electrical characterization · Table 2
CD2 diffusion coefficient D (light)	0.000143	—	—	Table Exact Reported	PDF p9 / article p5729 · Electrical characterization · Table 2
CD2 diffusion length (light)	1.29e-07	—	—	Table Exact Reported	PDF p9 / article p5729 · Electrical characterization · Table 2
CD2 effective carrier mobility (light)	0.00555	—	—	Table Exact Reported	PDF p9 / article p5729 · Electrical characterization · Table 2
CD2 mobility-transit-time product (light)	3.25e-13	—	—	Table Exact Reported	PDF p9 / article p5729 · Electrical characterization · Table 2
CD2 transit time (light)	5.86e-11	—	—	Table Exact Reported	PDF p9 / article p5729 · Electrical characterization · Table 2

current-voltage characteristics under dark conditions

Electrical conductivity

ligand based device · Thin Film

Room temperature I-V measurement; ligand device shown under dark conditions; no conductivity change upon light exposure reported.

Temperature: 299
Atmosphere: nitrogen-filled glove box
Geometry: ligand based Al/ligand interface control device; exact stack not separately detailed
Context: pristine molecular control device
Measurement source: SI PDF p11-p12 / rendered p011-p012 · Device Fabrication; Electrical Characterization · Equations S2-S6

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
ligand device dark conductivity	1.35 x 10^-8 S m^-1	—	—	Text Exact Reported	PDF p6 / article p5726 · Electrical characterization · Fig. 7
ligand device contact behaviour	almost linear / ohmic	—	—	Qualitative Qualitative	PDF p7 / article p5727 · Electrical characterization · Fig. 7