Electrical Transport — Investigation of charge transport and Schottky properties in a 1D Cd(II) coordination polymer featuring 9-anthracenecarboxylic acid

3 measurement groups · 14 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Thermionic-emission and Cheung analysis of I-V data

Electrical conductivity

ITO/CP1/Al Schottky diode · Thin Film

Series resistance, barrier height and ideality factor extracted from dV/d(lnI) vs I and H(I) vs I plots.

Temperature: room temperature
Geometry: ITO/CP1/Al Schottky barrier diode
Context: pristine CP1 film in Schottky diode
Measurement source: 4 · 3.3. Electrical characterization · Fig. 4; Table 1

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Schottky barrier heightMarked as a best value within this paper	0.67 eV	0.67 eV	—	Table Exact Reported	4 · 3.3. Electrical characterization · Table 1; Fig. 4b
Ideality factor from dV/d(lnI) vs IMarked as a best value within this paper	1.42	—	—	Table Exact Reported	4 · 3.3. Electrical characterization · Table 1
Series resistance from dV/d(lnI) vs IMarked as a best value within this paper	6430 ohm	6430 ohm	—	Table Exact Reported	4 · 3.3. Electrical characterization · Table 1
Series resistance from H(I) vs I	8814 ohm	8814 ohm	—	Table Exact Reported	4 · 3.3. Electrical characterization · Table 1

Two-probe current-voltage (I-V) measurement

Electrical conductivity

ITO/CP1/Al Schottky diode · Thin Film

Keithley 2635B source meter; voltage sweep from -1 V to +1 V at room temperature.

Temperature: room temperature
Atmosphere: not reported
Geometry: ITO/CP1/Al metal-semiconductor junction; approximately 1 um CP1 film; Al electrode area 7.065 x 10^-6 m2
Context: pristine CP1 film in Schottky diode
Measurement source: 3 · 2.4; 3.3. Electrical characterization · Fig. 3; Scheme 1

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Al electrode area	7.065 x 10^-6 m2	0.000007065 m2	—	Text Exact Reported	3 · 2.4. Device fabrication and characterization
CP1 film thickness	approximately 1 um	0.000001 m	approximately	Text Approximate	3 · 2.4. Device fabrication and characterization
Forward current at +1 V from I-V plot	approximately 5.8 x 10^-4 A at +1 V	0.00058 A	visual estimate from plotted axis	Figure Axis Approximate	4 · 3.3. Electrical characterization · Fig. 3a
I-V curve behaviour	Nonlinear, rectifying behaviour characteristic of a metal-semiconductor junction.	—	—	Qualitative Qualitative	3 · 3.3. Electrical characterization · Fig. 3
Rectification ratioMarked as a best value within this paper	13.9	—	—	Text Exact Reported	3 · 3.3. Electrical characterization · Fig. 3
Reverse current at -1 V from I-V plot	approximately -4.5 x 10^-5 A at -1 V	-0.000045 A	visual estimate from plotted axis	Figure Axis Approximate	4 · 3.3. Electrical characterization · Fig. 3a

Logarithmic I-V and power-law analysis

Electrical conductivity

ITO/CP1/Al Schottky diode · Thin Film

ln(I) vs ln(V) plot under forward bias used to identify Ohmic and space-charge-limited-current regions; DC conductivity reported for the Ohmic region.

Temperature: room temperature
Geometry: ITO/CP1/Al Schottky barrier diode
Context: pristine CP1 film in Schottky diode
Measurement source: 5 · 3.3. Electrical characterization · Fig. 5

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
DC conductivity in Ohmic regionMarked as a best value within this paper	1.07 x 10^-4 S/m	0.000107 S/m	—	Text Exact Reported	5 · 3.3. Electrical characterization · Fig. 5; Table S6
Low-bias conduction regime	low forward-bias range: I proportional to V (Ohmic behaviour)	—	—	Text Exact Reported	5 · 3.3. Electrical characterization · Fig. 5
Approximate Ohmic-SCLC transition on ln(V) axis	ln(V) approximately -1.45	—	visual estimate from vertical marker in Fig. 5	Figure Axis Approximate	5 · 3.3. Electrical characterization · Fig. 5
High-bias conduction regime	higher voltage range: I proportional to V^2, characteristic of SCLC	—	—	Text Exact Reported	5 · 3.3. Electrical characterization · Fig. 5