Electrical Transport — Charge-transfer interface of insulating metal-organic frameworks with metallic conduction

7 measurement groups · 12 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Pristine Cu-BPyDC thin film · Thin Film

Room-temperature I-V profile with EGaIn contacts.

Temperature: 300
Geometry: Top and bottom eutectic GaIn contacts; cross-plane and in-plane modes
Context: pristine Cu-BPyDC control
Measurement source: 4 · Results · Fig. 4b; Supplementary Fig. 8

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Pristine Cu-BPyDC conductance	~4 x 10-12 S	—	—	Text Approximate	4 · Results · Fig. 4b; Supplementary Fig. 8

Pristine Cu-TCNQ thin film · Thin Film

Room-temperature cross-plane and in-plane I-V profiles with EGaIn contacts.

Temperature: 300
Geometry: Top and bottom eutectic GaIn contacts; cross-plane and in-plane modes
Context: pristine Cu-TCNQ control
Measurement source: 4 · Results · Fig. 4a; Supplementary Fig. 8

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Pristine Cu-TCNQ conductance	~6 x 10-7 S	—	—	Text Approximate	4 · Results · Fig. 4a; Supplementary Fig. 8

Cu-TCNQ/Cu-BPyDC heterostructured thin film · Thin Film

Room-temperature in-plane and cross-plane I-V profiles on several spots and batches.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Heterostructure cross-plane conductanceMarked as a best value within this paper	~1 x 10-5 S	—	—	Text Approximate	4 · Results · Fig. 4c
Heterostructure in-plane conductance	~5 x 10-7 S	—	—	Text Approximate	4 · Results · Supplementary Fig. 8

TCNQ@Cu-BPyDC thin film · Thin Film

Room-temperature in-plane and cross-plane I-V profiles for TCNQ@Cu-BPyDC.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
TCNQ@Cu-BPyDC cross-plane conductance	~3 x 10-7 S	—	—	Text Approximate	4 · Results · Fig. 4f; Supplementary Fig. 10
TCNQ@Cu-BPyDC in-plane conductance	~6 x 10-7 S	—	—	Text Approximate	4 · Results · Supplementary Figs. 8 and 9

Cu-TCNQ/Cu-BPyDC heterostructured thin film · Thin Film

Cross-plane J-V at 0.5 V used to estimate resistivity; EGaIn contact diameter ca. 550 um.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Heterostructure cross-plane resistivityMarked as a best value within this paper	~1 x 10^4 ohm m	—	—	Text Approximate	5 · Results · Supplementary Fig. 12
TCNQ@Cu-BPyDC cross-plane resistivity	~1 x 10^6 ohm m	—	—	Text Approximate	5 · Results · Supplementary Fig. 12

Cu-TCNQ/Cu-BPyDC heterostructured thin film · Thin Film

Cross-plane I-V profiles from 160 K to 373 K.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Heterostructure current at 2 V and 160 K	about 8.3 x 10-5 A at 2 V	—	—	Visual Estimate Uncertain	6 · Figure · Fig. 5b
Heterostructure current at 2 V and 373 K	about 1.0 x 10-5 A at 2 V	—	—	Visual Estimate Uncertain	6 · Figure · Fig. 5b

TCNQ@Cu-BPyDC thin film · Thin Film

Cross-plane I-V profiles from 160 K to 373 K.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
TCNQ@Cu-BPyDC current at 2 V and 160 K	about 1.2 x 10-6 A at 2 V	—	—	Visual Estimate Uncertain	6 · Figure · Fig. 5c
TCNQ@Cu-BPyDC current at 2 V and 373 K	about 9 x 10-6 A at 2 V	—	—	Visual Estimate Uncertain	6 · Figure · Fig. 5c