Authors unavailable · Coordination Chemistry Reviews · 2025
To review SURMOF chemistry, layer-by-layer preparation, anchoring, charge-transport mechanisms and nanoelectronic applications, including sensors, photoelectronic devices, electrochromic devices, diodes, memristors, triboelectric nanogenerators and thermoelectric devices.
The review’s argument is preserved as a navigable set of section summaries.
Surveys device demonstrations across electrical sensors, photoelectronic devices, electrochromic coatings, rectifiers, memristors, TENGs and thermoelectrics.
Relevance: Core · 6 · Applications for Nano-scale electronic devices · Table 2
Treats SURMOFs as assemblies of surface-functionalising molecules, metal ions and organic linkers, with emphasis on SAM anchoring and alternative NHC anchors.
Relevance: Core · 2-3 · Structure of SURMOFs · Fig. 3
Synthesises progress since 2007 and identifies limits in stability, conductivity, SAM/substrate diversity, thermoelectric depth and bioelectronic translation.
Relevance: Core · 10-11 · Conclusion and future directions
Reviews heteroligand and heterometal designs that tune transport, exciton migration, energy levels and interfacial electronic properties.
Relevance: Core · 3 · Heterogenous SURMOFs
Defines SURMOFs as surface-grown crystalline porous films and frames their advantage over bulk MOFs in thickness, orientation, uniformity and device integration.
Relevance: Core · 1 · Introduction
Summarises solution-based epitaxial growth routes, including dipping, spraying, pumping, spin-coating and Langmuir-Blodgett deposition.
Relevance: Core · 2 · Layer-by-layer preparation of SURMOFs · Fig. 2
Covers post-synthetic functionalisation and guest-molecule loading as routes to new surface chemistry, conductivity, rectification, switching and magnetic behaviour.
Relevance: Core · 4-5 · Postmodification
Organises charge transport in MOFs/SURMOFs into through-bond, through-space and hopping pathways, with guest-promoted hopping as an extrinsic route.
Relevance: Core · 1-2 · Charge transport mechanism in SURMOFs · Fig. 1; Table 1
Classification systems are attributed to this review and are not treated as a global material registry.
Table 2 groups SURMOF nanofilms by device class, substrate/electrode configuration, dopant and synthesis route.
Categories: electric sensor · photoelectronic device · electrochromic device · diode · memristor · triboelectric nanogenerator · thermoelectric device
21 · Applications for Nano-scale electronic devices · Table 2
A component-level framework for discussing anchoring, metal-node choice and linker-driven pore/electronic tuning.
Categories: substrate-functionalizing molecules · metal ions · organic linkers
2-3 · Structure of SURMOFs · Fig. 3
The review classifies SURMOF preparation by representative LBL/LPE delivery geometries and their scale, uniformity and automation implications.
Categories: dipping · spraying · pumping · spin-coating · Langmuir-Blodgett deposition
2 · Layer-by-layer preparation of SURMOFs · Fig. 2
Separates heterogeneous SURMOFs by whether different ligands, metals, dopants or stacked blocks generate tuned interfacial and electronic responses.
Categories: heteroligand · heterometal · p-type/n-type dopant junctions · sequential blocks · single mixed block
3 · Heterogenous SURMOFs
Distinguishes surface-only modification from pore/guest strategies that change conductivity, rectification, switching or molecular selectivity.
Categories: surface functional group installation · click chemistry · guest molecule loading · polymerisation in pores · metal-ion or nanoparticle doping
4-5 · Postmodification
Through-bond uses continuous coordination/covalent pathways; through-space uses pi-stacking; hopping uses redox-active centres; guest species add carrier and guest-framework pathways.
Categories: through-bond · through-space · redox hopping · guest-promoted hopping
1-2 · Charge transport mechanism in SURMOFs · Fig. 1; Table 1
Review-defined families retain their representative materials and conduction descriptions.
TCNQ-linked Cu SURMOF thin films used for rectifying behaviour after iodine exposure.
Conduction: Iodine changes TCNQ oxidation states and creates asymmetric electronic imbalance through depth-dependent oxidation.
Representative materials: Cu(TCNQ) · I2-doped Cu(TCNQ)
Nodes / linkers: Cu · TCNQ · iodine dopant
8-9 · Diode
MOF-on-MOF stacks combining p-type anthracene SURMOF with n-type C60-containing SURMOF.
Conduction: Rectification depends on interface order, energy alignment and defect asymmetry across the p-n/n-p stack.
Representative materials: p-Cu2(ADC)2(DABCO)/n-C60@Cu2(BDC)2(DABCO) · n-p SURMOF
Nodes / linkers: Cu · ADC · BDC · DABCO · C60
8 · Diode
Cu-BTC SURMOF family repeatedly used for sensors, diodes, memristors and thermoelectric demonstrations.
Conduction: Frequently relies on guest-mediated hopping, redox mediation, humidity/defect states or dopant-induced carrier changes.
Representative materials: HKUST-1 SURMOF · Fc@HKUST-1 · PPy@HKUST-1 · TCNQ@HKUST-1
Nodes / linkers: Cu · BTC · guest molecules: ferrocene, PPy, TCNQ
10 · Conclusion and future directions
Sequential Tb/Eu/Gd-BTC SURMOF layers used to tune photoluminescent colour and energy transfer.
Conduction: Discussed primarily for energy-transfer and emission tuning rather than charge conductivity.
Representative materials: Tb/Eu-BTC SURMOF · Tb/Eu/Gd-BTC SURMOF
Nodes / linkers: Tb · Eu · Gd · BTC
4 · Hetero metals
Layer-and-pillar Cu paddle-wheel SURMOFs assembled from dicarboxylate layer linkers and DABCO-like pillars.
Conduction: Used for selective sensing, TENG polarity tuning and heterojunction device construction rather than as intrinsically high-conductivity films.
Representative materials: Cu2(BDC)2(DABCO) · Cu2(NH2-BDC)2(DABCO) · Cu2(F4-BDC)2(DABCO) · [Cu2(CAM)2DABCO]n
Nodes / linkers: Cu · BDC · NH2-BDC · F4-BDC · DABCO · CAM
6 · Electric sensor
Breathing MIL-53 SURMOF thin films grown on flexible Galinstan/PDMS electrodes for RRAM behaviour.
Conduction: Switching is interpreted through electrochemically reduced Ga conductive filaments stabilised by the MOF nanofilm topology.
Representative materials: MIL-53/GaInSn@PDMS/Ag
Nodes / linkers: Al · BDC
10 · Memristor
Well-aligned PDICl4-based Zn SURMOF-2 coatings used for reversible voltage-induced colour changes.
Conduction: Electrochromism arises from redox changes of the conjugated PDICl4 linker and Li+/electrolyte interactions with radical states.
Representative materials: Zn2(PDICl4)2@ITO · Zn2(PDICl4)2@AgNW/glass · Zn2(PDICl4)2@AgNW/PET
Nodes / linkers: Zn · PDICl4
8 · Electrochromic device
Zn-based SURMOF-2 thin films using porphyrinic linkers and, in some cases, donor/acceptor modification.
Conduction: Photoinduced charge generation is interpreted through porphyrin absorption, indirect band-gap effects and donor-acceptor transfer.
Representative materials: Zn-SURMOF-2 · Pd-DCPP-Zn-SURMOF-2 · DPA-Zn-SURMOF-2 · C60@Zn(TPP)
Nodes / linkers: Zn · Pd metalloporphyrin centres · DCPP · Pd-DCPP · DPA-Zn-DCPP · TPP · C60 guest
7 · Photoelectronic device
Review-level synthesis principles remain separate from primary-study recipes.
Functional groups on SAMs or activated substrates coordinate metal ions and template oriented SURMOF growth.
Claimed effects: Anchoring chemistry controls film orientation, stability and device interface behaviour; NHCs are highlighted as stronger alternatives to thiols.
Controlling variables: anchor group · SAM packing · substrate work function · anchoring geometry · surface activation
Representative materials: NHC-[Cu2(CAM)2DABCO]n · thiol-anchored HKUST-1 · hydroxyl-activated MIL-53
Caveat: The review explicitly identifies the present SAM/substrate set as limited and stability-sensitive.
3 · Structure of SURMOFs
Alternating immersion in metal-ion and linker solutions builds SURMOF layers on functionalised substrates.
Claimed effects: Standard route for high-quality SURMOFs with precise control over film thickness, orientation and crystallinity.
Controlling variables: number of cycles · metal/linker sequence · substrate functionalisation · manual versus automated immersion
Representative materials: HKUST-1 · In(TCPP) · MIL-53 · Cu(TCNQ) · M2L2P heterojunctions
Caveat: Recipe details and device performance remain primary-paper matters; the review treats LPE at strategy level.
2 · Dipping method
Introduce redox-active guests, dopants, nanoparticles or polymers into SURMOF pores after growth.
Claimed effects: Can enhance conductivity and introduce rectification or resistive switching absent in pristine SURMOFs.
Controlling variables: guest identity · loading method · activation · pore accessibility · guest-framework interaction
Representative materials: Fc@HKUST-1 · I2-doped Cu(TCNQ) · PPy@HKUST-1 · TCNQ@HKUST-1
Caveat: Guest placement and host-guest crystallography are often insufficiently resolved.
5 · Guest-molecule Modification
Sequentially vary ligands or metal ions during LBL growth to form blocks, mixed-linker phases or heterometal stacks.
Claimed effects: Enables nanoscale tuning of conductivity, energy alignment, charge localisation, exciton migration and interfacial electronics.
Controlling variables: ligand identity · metal identity · layer order · pore-size matching · pKa · interface lattice mismatch
Representative materials: MTV-SURMOF · Tb/Eu-BTC SURMOF · p-n SURMOF
Caveat: Interface defects and layer order can dominate device performance.
3 · Heterogenous SURMOFs
Pump systems deliver metal and linker solutions through nozzles or microchannels to maintain controlled flow rates.
Claimed effects: Improves uniformity and reproducibility and is positioned as useful for large-scale production.
Controlling variables: flow rate · reaction chamber design · substrate holder · delivery channel geometry
Representative materials: HKUST-1 · Zn(TCPP) · Cu2(BDC)2(DABCO) · TCNQ@HKUST-1
Caveat: The review gives strategy-level examples but not scale-up validation across device classes.
2 · Pumping method
Alternating solutions are dispensed on a rotating substrate to spread thin layers by centrifugal force.
Claimed effects: Rapid growth, efficient chemical use and uniform thin films with controlled composition.
Controlling variables: rotation speed · solution volume · cycle count · linker/metal alternation
Representative materials: Zn(TPP) · C60@Zn(TPP) · Zn(R-MeBINOL-PorDC)
Caveat: Performance depends strongly on interlayer coupling and film densification.
2 · Spin-coating method
Metal, linker and rinse streams are atomised through nozzles onto a substrate to grow multilayer coatings.
Claimed effects: Conserves solution, enables local functionalisation and rapid automated setup for uniform coatings.
Controlling variables: nozzle configuration · spray cycles · rinsing/drying · precursor concentration · automation
Representative materials: HKUST-1 · Fc@HKUST-1 · DPA-Zn-SURMOF-2 · Zn2(PDICl4)2
Caveat: Uniformity and electronics depend on electrode and substrate integration, not only growth method.
2 · Spraying method
These are the review authors’ synthesis, not newly measured results.
Thiol/S-Au anchoring is widely used but limited by weaker bonding, high-temperature instability and ill-defined binding geometry; NHC anchors are a stabilising alternative.
Evidence basis: multi_reference
Caveat: The review does not provide a broad device-level statistical comparison of anchor types.
3 · Structure of SURMOFs
The authors argue that SURMOFs could translate electroactive MOF behaviour into bioelectronics because anisotropic growth, anchoring and crystallinity address limitations of conventional MOF films.
Evidence basis: review_reasoning
Caveat: This is an outlook extrapolation from MOF biointerface examples, not a mature SURMOF evidence base.
11 · Conclusion and future directions
SURMOFs are surface-grown crystalline porous films whose LBL synthesis gives more precise thickness, orientation and uniformity control than bulk MOFs.
Evidence basis: multi_reference
Caveat: The statement is a review-level generalisation; individual film quality must be checked in primary studies.
1 · Introduction
DPA modification improves light absorption and charge separation in Zn-SURMOF-2, but mobility and interlayer coupling still limit photovoltaic performance.
Evidence basis: single_reference
Caveat: Device-specific benchmark; primary paper needed for architecture details.
7 · Photoelectronic device
PDICl4-based electrochromic SURMOFs switch colour through voltage-driven linker redox states modulated by electrolyte cations.
Evidence basis: multi_reference
Caveat: Electrolyte formulation changes the radical state and colour response.
8 · Electrochromic device
SURMOFs can be grown on flexible polymers and biological leaf surfaces, supporting wearable and irregular-substrate electronics.
Evidence basis: multi_reference
Caveat: Long-term durability and practical integration remain early-stage.
10 · Conclusion and future directions
Guest loading can increase SURMOF conductivity or add rectification/switching by creating additional carriers, redox hopping or donor-acceptor pathways.
Evidence basis: multi_reference
Caveat: Guest loading can also introduce stability and structural-assignment uncertainties.
5 · Guest-molecule Modification
Heterogeneous SURMOFs add nanoscale tunability of charge transport, exciton migration, energy-level alignment and interfacial electronics beyond homogeneous frameworks.
Evidence basis: multi_reference
Caveat: Some examples are optical or adsorption-centred rather than direct charge-transport devices.
3 · Heterogenous SURMOFs
SURMOF p-n/n-p diode performance depends strongly on heterointerface order and defects, with p-n stacks outperforming n-p stacks in the reviewed example.
Evidence basis: single_reference
Caveat: Based on one heterojunction system and secondary review interpretation.
8 · Diode
Humidity and defect-associated water states can dominate HKUST-1 SURMOF rectification, NDR and resistive switching behaviour.
Evidence basis: multi_reference
Caveat: Useful for mechanism discussion but also highlights environmental reproducibility risks.
9 · Diode; Memristor
LBL/LPE growth is central to SURMOF device relevance because it links film thickness, orientation and substrate integration to electronic performance.
Evidence basis: review_reasoning
Caveat: The review does not establish universal process-performance laws for every device class.
2 · Layer-by-layer preparation of SURMOFs
Porphyrin SURMOFs are repeatedly used for photoelectronic devices because their planar pi systems and visible absorption favour light harvesting and charge separation.
Evidence basis: multi_reference
Caveat: Practical photovoltaic efficiency remains low in several examples.
7 · Photoelectronic device
Electrical SURMOF sensors can detect guest adsorption through current changes, but top-electrode choice can limit practical interpretation and deployment.
Evidence basis: single_reference
Caveat: Specifically tied to Hg-electrode HKUST-1 junctions in the review.
6 · Electric sensor
Thermoelectric SURMOFs are promising because porous MOFs can combine low thermal conductivity with tunable electronic conductivity, but the SURMOF thermoelectric literature remains sparse.
Evidence basis: review_reasoning
Caveat: The review highlights only limited HKUST-1/TCNQ examples for SURMOF thermoelectrics.
10-11 · Conclusion and future directions
The review frames MOF charge transport through three primary pathways: through-bond, through-space and hopping, with guest-promoted hopping as a practical extension.
Evidence basis: multi_reference
Caveat: This taxonomy is broader than SURMOFs and includes MOF examples in Table 1.
1-2 · Charge transport mechanism in SURMOFs · Fig. 1; Table 1
Every row remains visibly secondary and links to a primary dossier only where the mapping is verified.
| Material | Property | Reported value | Context and quality | Primary evidence | Review source |
|---|---|---|---|---|---|
| SecondaryZn2(PDICl4)2@AgNW SURMOF | coloration efficiency | 158 cm2 C−1 | Flexible AgNW-supported electrochromic SURMOF; orange to blue switching Text · Exact Reported | No verified corpus mapping | 8 · Electrochromic device |
| SecondaryC60@Zn(TPP) SURMOF | dark electrical conductivity | 1.5 × 10−11 S m−1 | After C60 loading Text · Exact Reported | No verified corpus mapping | 7 · Photoelectronic device |
| Secondaryd-[Cu2(CAM)2DABCO]n SURMOF | current response slope to (S)-1-phenylethanol | 147.6 μA (mM)−1 | CV in 1 mM K3[Fe(CN)6] with enantiomer probe Text · Exact Reported | No verified corpus mapping | 6-7 · Electric sensor |
| SecondaryDPA-Zn-SURMOF-2 | photovoltaic efficiency | 0.017 % | FTO/SURMOF/PEDOT:PSS device Text · Exact Reported | No verified corpus mapping | 7 · Photoelectronic device |
| SecondaryFc-loaded HKUST-1 SURMOF electrode | current density | >100 μA cm−2 at 0.2 V | 10 mM Fc-loaded SURMOF in diluted ionic liquid Text · Approximate | No verified corpus mapping | 6 · Electric sensor |
| SecondaryFc-loaded HKUST-1 SURMOF | current density increase | 5.4-fold for 5-cycle films | Compared with unloaded films; Hg top electrode; Fig. 8c Text · Rounded Reported | No verified corpus mapping | 6 · Electric sensor |
| SecondaryCu2(BDC)2-SURMOF-2/GFET | ethanol limit of detection | 0.2 mg L−1 (~100 ppm) | Ethanol sensing under N2 purging Text · Exact Reported | No verified corpus mapping | 6 · Electric sensor |
| SecondaryHKUST-1 SURMOF heterojunction | peak-to-valley current ratio | PVCR of 2 | After fifth sweep, 90% RH, NDR under positive voltage below 2 V Text · Exact Reported | No verified corpus mapping | 9 · Diode |
| SecondaryHKUST-1 SURMOF rMN memristor | ON/OFF ratio | ~2.3 × 10^6 at 0.4 V | 80% RH, Au/Ti/Cr rMN electrode Text · Approximate | No verified corpus mapping | 9 · Memristor |
| SecondaryI2-doped Cu(TCNQ) SURMOF | rectification ratio | approximately two orders of magnitude | After iodine vapour exposure on Au/FTO substrates Text · Approximate | No verified corpus mapping | 8-9 · Diode |
| SecondaryIn(TCPP) SURMOF photodetector | detectivity | 7.28 × 10^14 Jones | 420 nm irradiation at 10 V bias Text · Exact Reported | research_0621 | 7 · Photoelectronic device |
| SecondaryIn(TCPP) SURMOF photodetector | responsivity | 30.8 A W−1 | 420 nm irradiation at 10 V bias Text · Exact Reported | research_0621 | 7 · Photoelectronic device |
| SecondaryMIL-53/GaInSn@PDMS RRAM | ON/OFF ratio | approximately 200 at −0.1 V | Over 20 switching cycles; flexible stretched device Text · Approximate | No verified corpus mapping | 10 · Memristor |
| SecondaryPET/Au/HKUST-1/Au memristor | ON/OFF ratio | 18.5 at 0.1 V | Flexible PET device; measured at 0.1 V Text · Exact Reported | No verified corpus mapping | 9 · Memristor |
| SecondaryPd porphyrin Zn-SURMOF-2 | photovoltaic efficiency | 0.45 % | I−/I3− electrolyte top electrode; Fig. 10b Text · Exact Reported | research_0200 | 7 · Photoelectronic device |
| Secondaryp-n SURMOF heterojunction | rectification ratio | approximately six orders of magnitude | 100 nm SURMOF thin film, thin Au disk top electrode Text · Approximate | No verified corpus mapping | 8 · Diode |
| SecondaryPPy@HKUST-1 SURMOF | electrical conductivity | 5 × 10−6 S m−1 after 24 h doping | Pyrrole vapour deposition and in situ polymerisation; rMN top electrode Text · Exact Reported | No verified corpus mapping | 6 · Electric sensor |
| SecondaryTCNQ@HKUST-1 SURMOF | Seebeck coefficient | 375 μV K−1 at room temperature | Room temperature; temperature gradient with Peltier heaters/coolers Text · Exact Reported | research_0450 | 10 · Thermoelectric material |
| SecondaryTCNQ@HKUST-1 SURMOF | thermoelectric figure of merit ZT | 1.5 × 10−4 at 313 K | 313 K Text · Exact Reported | research_0450 | 10 · Thermoelectric material |
| SecondaryCu2(F4-BDC)2(DABCO) SURMOF on Scindapsus leaf | wind-driven current output | approximately 0.5 μA at 5 m s−1 | PDMS paired with SURMOF-coated leaf TENG Text · Approximate | No verified corpus mapping | 10 · Triboelectric nanogenerator |
Open questions are presented as review-author priorities, not conclusions from the primary database.
MOF biointerface examples are promising, but SURMOF-specific bioelectronic platforms need design strategies that preserve orientation, anchoring and reproducibility.
Proposed direction: Translate electroactive bulk-MOF motifs into well-defined SURMOF films for cellular sensing and neuromorphic contexts.
11 · Conclusion and future directions
Environmental factors substantially affect MOF conductivity and complicate reproducible sensing/material discovery.
Proposed direction: Perform controlled humidity, atmosphere and defect-state studies alongside electrical measurements.
11 · Conclusion and future directions
The authors identify unresolved crystallographic details of guest species in pores as a barrier to understanding charge-transfer interactions.
Proposed direction: Use detailed structural probes of guest location, loading and framework interaction under device-relevant conditions.
11 · Conclusion and future directions
Low electrical conductivity remains a significant limitation despite efforts to tune MOF structure and noncovalent linker interactions.
Proposed direction: Investigate continuous transport pathways, mixed-metal/mixed-linker systems and mechanisms.
11 · Conclusion and future directions
Porphyrin SURMOF photovoltaics still suffer from low carrier mobility, large interlayer spacing and weak interfacial conductivity.
Proposed direction: Improve film densification, interlayer coupling and device architecture for practical photovoltaics.
7 · Photoelectronic device
The review states that current SAM, metal and substrate selections remain limited, with overreliance on hydroxylated substrates and sulfur anchors.
Proposed direction: Explore broader surface activation strategies, NHC-based SAMs and systematic interface-property studies.
10-11 · Conclusion and future directions
Thermoelectric research on SURMOFs is promising but underexplored relative to other electrical applications.
Proposed direction: Tune intrinsic metals, extended metal-linker bonds and linker noncovalent interactions using LBL structure-performance control.
11 · Conclusion and future directions
Mappings show which printed review references have a verified counterpart in the frozen primary corpus.
| Reference | Study | Role and context | Corpus mapping |
|---|---|---|---|
| Ref. 22007 | Title unavailable | historical_origin · synthesis_strategyIntroduced the stepwise LPE/SURMOF concept using HKUST-1 on a carboxyl-terminated SAM. | Unmapped |
| Ref. 292015 | Title unavailable | electric_sensor · guest_modificationFerrocene-loaded HKUST-1 SURMOF junction benchmark for guest-responsive current increase, but with Hg-electrode caveat. | Unmapped |
| Ref. 302012 | Title unavailable | electric_sensor · redox_hoppingElectrochemical evidence for ferrocene redox mediation and hopping-like transport in Fc-loaded HKUST-1 SURMOF. | Unmapped |
| Ref. 312021 | Title unavailable | electric_sensor · GFETSelective ethanol sensing on SURMOF/GFET, used by the review as a non-redox-molecule electrical sensor example. | Unmapped |
| Ref. 322015 | Title unavailable | photoelectronic_device · photovoltaicPorphyrin-based Zn SURMOF photovoltaic benchmark and indirect-band-gap interpretation. | research_0200 |
| Ref. 332016 | Title unavailable | photoelectronic_device · photovoltaicDPA-modified porphyrin Zn-SURMOF photovoltaic with improved absorption but low mobility and efficiency. | Unmapped |
| Ref. 342019 | Title unavailable | photoelectronic_device · donor_acceptorC60 loading in porphyrin SURMOF used to illustrate donor-acceptor interfaces and photoconductivity enhancement. | Unmapped |
| Ref. 352021 | Title unavailable | photoelectronic_device · photodetectorHigh-responsivity In(TCPP) SURMOF photodetector with metal-oxo-chain charge-transfer interpretation. | research_0621 |
| Ref. 372023 | Title unavailable | electrochromic_deviceVoltage-driven PDICl4 radical-state electrochromism in aligned SURMOF-2 on ITO/glass. | Unmapped |
| Ref. 382024 | Title unavailable | electrochromic_device · flexible_deviceFlexible AgNW-supported electrochromic SURMOF benchmark with switching speed and durability. | Unmapped |
| Ref. 392015 | Title unavailable | memristor · flexible_deviceFlexible PET/Au/HKUST-1/Au memristor benchmark and Cu/carbon-channel switching interpretation. | Unmapped |
| Ref. 402016 | Title unavailable | memristor · guest_modificationFerrocene-loaded HKUST-1 SURMOF memristor example with improved ON/OFF ratio but unresolved switching prediction. | Unmapped |
| Ref. 412020 | Title unavailable | memristor · humidity_effectHumidity-dependent HKUST-1 SURMOF resistive switching with high ON/OFF ratio and water-defect mechanism. | Unmapped |
| Ref. 422019 | Title unavailable | memristor · flexible_deviceFlexible MIL-53/GaInSn@PDMS RRAM benchmark and filament mechanism. | Unmapped |
| Ref. 432021 | Title unavailable | diode · heterostructureMOF-on-MOF p-n/n-p heterojunctions used to show interface-order control of rectification. | Unmapped |
| Ref. 442016 | Title unavailable | diode · guest_modificationIodine-doped Cu(TCNQ) SURMOF rectification with asymmetric oxidation interpretation. | Unmapped |
| Ref. 462021 | Title unavailable | diode · NDR · humidity_effectHKUST-1 SURMOF negative differential resistance and rectification under high humidity. | Unmapped |
| Ref. 472015 | Title unavailable | thermoelectric · guest_modificationMain SURMOF thermoelectric benchmark in the review: positive Seebeck coefficient and low ZT. | research_0450 |
| Ref. 622024 | Title unavailable | electric_sensor · polymer_dopingPyrrole/polymer-loaded HKUST-1 SURMOF benchmark showing transient conductivity increase and oxidation-state caveat. | Unmapped |
| Ref. 1122020 | Title unavailable | electric_sensor · chiral_sensor · anchoringNHC-anchored homochiral SURMOF sensor used as evidence for stronger anchoring and enantioselective electrochemical response. | Unmapped |
| Ref. 1282019 | Title unavailable | hetero_ligand · mixed_linkerMixed-linker MTV-SURMOFs used for pKa-orientation relationship and multivariate adsorption example. | Unmapped |
| Ref. 1372019 | Title unavailable | hetero_metal · photoluminescenceHeterometal lanthanide SURMOF example showing emission-colour tuning by layer design. | Unmapped |
| Ref. 1432020 | Title unavailable | memristor · polymer_substratePolymer-stack HKUST-1 SURMOF memristor example showing thickness-dependent leakage and stable switching. | Unmapped |
| Ref. 1762021 | Title unavailable | TENG · biointerface · flexible_deviceLeaf-grown M2L2P SURMOF TENG benchmark and biocompatible irregular-substrate example. | Unmapped |