| Crystalline Cu3(BTC)2 computational modelresearch_0450__mat__cu3btc2 | Model · Model System · Model | DFT-relaxed/experimental Cu3(BTC)2 structure and MD supercell model. | main p.6, article p.3458 · Electronic Structure Calculations · Figure 3 |
| Pristine Cu3(BTC)2 thin-film device on quartzresearch_0450__mat__cu3btc2 | Thin Film · Pristine Control · Pristine Framework | Automated layer-by-layer liquid-phase film before TCNQ infiltration; activated at 180 deg C in vacuum before infiltration experiments.Fused quartz substrate, 19 x 19 mm2, 0.55 mm thick, with prepatterned Au pads · 200 nm nominal thickness | main p.6, article p.3458 · Experimental Section |
| Uninfiltrated Cu3(BTC)2 region C on the partially immersed quartz deviceresearch_0450__mat__cu3btc2 | Thin Film · Pristine Control · Pristine Framework | Upper/uninfiltrated region after partial immersion of the device in TCNQ/methanol.Fused quartz substrate with prepatterned Au contacts · 200 nm nominal Cu3(BTC)2 film | main p.3, article p.3455 · Figure 1 caption · Figure 1 |
| Crystalline MOF-5 MD validation modelresearch_0450__mat__mof5_model | Model · Model System · Model | Green-Kubo molecular-dynamics benchmark model. | SI p.7 · Molecular dynamics simulations of thermal conductivity |
| TCNQ@Cu3(BTC)2 computational modelresearch_0450__mat__tcnq_cu3btc2 | Model · Model System · Model | Periodic DFT/MD model with TCNQ guest molecules in Cu3(BTC)2 pores; DFT DOS model includes water on remaining uncoordinated Cu dimers. | main p.6, article p.3458 · Electronic Structure Calculations · Figure 3 |
| TCNQ-infiltrated Cu3(BTC)2 thin-film region A on quartzresearch_0450__mat__tcnq_cu3btc2 | Thin Film · Target Sample · Guest Loaded | Activated Cu3(BTC)2 film partially immersed in saturated TCNQ/methanol for about 24 h, rinsed with methanol and dried under N2.Fused quartz substrate with 200 x 500 um Au pads at 85, 110, 135 and 160 um spacings · 200 nm nominal Cu3(BTC)2 film | main p.3, article p.3455 · Figure 1 caption · Figure 1 |
| TCNQ@Cu3(BTC)2 TDTR film on p-Si/SiO2research_0450__mat__tcnq_cu3btc2 | Thin Film · Target Sample · Guest Loaded | Deposited using a method similar to the quartz device, then prepared with Al transducer dots for TDTR.p-Si wafer coated with 100 nm thermal oxide; patterned Au pads; 200 nm thick, 0.75 mm diameter Al dots for TDTR · 200 nm thick TCNQ@Cu3(BTC)2 MOF film | main p.6, article p.3458 · Thermal Conductivity Measurements · Figure 4 |