Electrical Transport — Thin film thermoelectric metal-organic framework with high seebeck coefficient and low thermal conductivity

3 measurement groups · 8 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

TCNQ-infiltrated Cu3(BTC)2 thin-film region A on quartz · Thin Film

Several TCNQ@Cu3(BTC)2 devices with channel lengths 85-160 um measured at seven temperatures.

Geometry: Au contact separations 85, 110, 135 and 160 um
Context: Guest-loaded film transport, contact-resistance check
Measurement source: SI p.2 · Channel length dependence of conductivity · Figure S2

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Channel length range used for contact-resistance check	85-160 microns	—	—	Text Range	SI p.2 · Channel length dependence of conductivity · Figure S2
Contact-resistance assessment	resistance dominated by transport in the thin film, as opposed to contact resistance	—	—	Text Qualitative	SI p.2 · Channel length dependence of conductivity · Figure S2

TCNQ-infiltrated Cu3(BTC)2 thin-film region A on quartz · Thin Film

Conductivity measured between 10 and 40 deg C using computer-controlled voltage/current source and current amplifier.

Temperature: 283-313 K
Geometry: Thin-film Au-pad device
Context: Guest-loaded conducting region
Measurement source: main p.6, article p.3458 · Electrical and Thermoelectric Measurements · Figure 2e

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Thermally activated transport energy barrier	0.052 eV	—	—	Text Rounded Reported	main p.2, article p.3454 · Results · Figure 2e
Electrical conductivity at room temperatureMarked as a best value within this paper	sigma = 0.45 S m-1 used for ZT at 298 K	—	—	Text Rounded Reported	main p.4, article p.3456 · Results · Figure 5
Electrical conductivity over plotted temperature range	about 0.33-0.53 S m-1 over about 283-313 K from Figure 2e	—	—	Figure Axis Range	main p.4, article p.3456 · Figure 2 caption · Figure 2e

TCNQ-infiltrated Cu3(BTC)2 thin-film region A on quartz · Thin Film

Representative I-V measurements on infiltrated region A, transition region B and uninfiltrated region C.

Geometry: Au contacts on quartz; contact spacings include 85, 110, 135 and 160 um
Context: Guest-loaded region A versus pristine region C
Measurement source: main p.2, article p.3454 · Results · Figure 1f

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Region A current at about +10 V	about +1.0 uA at +10 V from Figure 1f	—	—	Figure Axis Approximate	main p.3, article p.3455 · Figure 1 · Figure 1f
Ohmic conduction in infiltrated region	linear I/V curve; meaningful conductivity only in region A	—	—	Qualitative Qualitative	main p.2, article p.3454 · Results · Figure 1f
Uninfiltrated region C conductivity	no meaningful conductivity observed	—	—	Qualitative Qualitative	main p.3, article p.3455 · Figure 1 caption · Figure 1f